公开(公告)号：EP2325875B1

公开(公告)日：2018-06-06

申请号：EP09812805.1

申请日：2009-02-20

Applicant: Omron Corporation

Inventor： ONO, Kazuyuki ,  MAEKAWA, Tomofumi

IPC: B81C3/00 ,  H01L21/52 ,  H04R19/04 ,  H05K1/18 ,  H01L23/552 ,  H04R19/00 ,  H04R13/00

CPC classification number: H04R31/006 ,  B81B2201/0257 ,  B81B2203/0392 ,  B81C3/001 ,  H01L23/552 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2731 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/16152 ,  H01L2924/164 ,  H04R19/005 ,  H04R19/04 ,  H01L2924/0715 ,  H01L2224/48 ,  H01L2224/45099

Abstract: A semiconductor element 53 has a diaphragm 72 arranged on an upper surface of a base 71 through which a cavity 73 having a truncated pyramid shape is penetrated vertically A die bonding pad 65 is formed on an upper surface of a printed wiring board like substrate 52, and the semiconductor element 53 has the lower surface adhered to the die bonding pad 65 with a die bonding resin 74. The die bonding pad 65is formed with an opening 76 by removing a region facing the lower end of a valley section 75 at the inner peripheral surface of the cavity 73 of the semiconductor element 53, so that the die bonding pad 65 does not contact the slower end of the valley section 75.

公开(公告)号：EP3244450A1

公开(公告)日：2017-11-15

申请号：EP17177883.0

申请日：2010-10-20

Applicant: Sony Corporation

Inventor： TAKAHASHI, Hiroshi ,  UMEBAYASHI, Taku

IPC: H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L21/762

CPC classification number: H01L27/14636 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/18 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2224/45099

Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

Abstract translation: 一种具有第一半导体部分的半导体器件，该第一半导体部分在其一侧包括第一布线层; 第二半导体部分，所述第二半导体部分在其一侧包括第二布线层，所述第一半导体部分和所述第二半导体部分以所述第一半导体部分和所述第二半导体部分的相应的第一布线层侧和第二布线层侧彼此面对地固定在一起; 导电材料，其穿过所述第一半导体部分延伸到所述第二半导体部分的所述第二布线层，并且借助于所述导电材料所述第一布线层和所述第二布线层电连通; 以及除了用于导电材料的开口之外的开口，其穿过第一半导体部分延伸到第二布线层。

公开(公告)号：EP2672579B1

公开(公告)日：2017-10-04

申请号：EP13168846.7

申请日：2013-05-23

Applicant: Hanning Elektro-Werke GmbH & Co. KG

Inventor： Buchalla, Harald ,  Meyer, Christian

IPC: H01R43/02

CPC classification number: B23K20/24 ,  B23K20/004 ,  B23K20/10 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2924/00014 ,  H01R43/0207 ,  H01R43/28 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/2076

公开(公告)号：EP1662646B1

公开(公告)日：2017-10-04

申请号：EP05025066.1

申请日：2005-11-16

Applicant: Marvell World Trade Ltd.

Inventor： Sutardja, Sehat

IPC: G06F1/26 ,  G06F1/32 ,  H01L23/00 ,  H02M3/155 ,  H02J1/00 ,  H02M1/00 ,  H02J1/08 ,  H02M3/158

CPC classification number: G06F1/26 ,  G06F1/324 ,  G06F1/3296 ,  H01L24/45 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/30107 ,  H02J1/08 ,  H02J2001/008 ,  H02M3/155 ,  H02M2001/008 ,  Y02D10/126 ,  Y02D10/172 ,  H01L2224/48 ,  H01L2924/00

Abstract: A processing system comprises a first processing module and a second processing module that communicates with the first processing module. The first and second processing modules are connected in series between first and second reference potentials. An operating system communicates with the first and second processing modules and performs at least one of load balancing and/or throttling of the first and second processing modules to reduce a difference in current consumption between the first and second processing modules.

Abstract translation: 处理系统包括第一处理模块和与第一处理模块通信的第二处理模块。 第一和第二处理模块串联连接在第一和第二参考电位之间。 操作系统与第一和第二处理模块通信并且执行第一和第二处理模块的负载平衡和/或节流中的至少一个，以减小第一和第二处理模块之间的电流消耗的差异。

公开(公告)号：EP2916353B1

公开(公告)日：2017-07-26

申请号：EP13850020.2

申请日：2013-10-25

Applicant: NSK Ltd.

Inventor： SUNAGA, Takashi ,  KANEKO, Noboru ,  MIYOSHI, Osamu

IPC: H01L23/48 ,  H01L21/60 ,  H01L25/07 ,  H01L25/18

CPC classification number: H05K1/09 ,  H01L23/142 ,  H01L23/3735 ,  H01L23/49582 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/35847 ,  H01L2224/3701 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/4112 ,  H01L2224/48 ,  H01L2224/73263 ,  H01L2224/77272 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84424 ,  H01L2224/84447 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/85 ,  H01L2224/9221 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0271 ,  H05K1/05 ,  H05K1/181 ,  H05K3/3431 ,  H05K2201/10166 ,  H05K2201/1028 ,  H05K2201/1031 ,  H05K2201/10409 ,  H05K2201/10946 ,  H05K2201/10962 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/33 ,  H01L2924/00012 ,  H01L2924/00

公开(公告)号：EP2703116B1

公开(公告)日：2017-03-22

申请号：EP12006236.9

申请日：2012-09-04

Applicant: Heraeus Deutschland GmbH & Co. KG

Inventor： Ryu, Jae-Sung ,  Chung, Eun-Kyun ,  Tark, Yong-Deok

IPC: B23K35/30 ,  C22C5/06

CPC classification number: B23K35/0227 ,  B23K35/3006 ,  B23K2201/36 ,  B23K2201/40 ,  B23K2201/42 ,  C22C5/06 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/12041 ,  H05K7/02 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01045 ,  H01L2924/01044 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/013 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01049 ,  H01L2924/01006 ,  H01L2924/01004 ,  H01L2924/01005

公开(公告)号：EP2490251A4

公开(公告)日：2016-10-05

申请号：EP09850414

申请日：2009-10-16

Applicant: LG CHEMICAL LTD

Inventor： JOO HYO SOOK ,  CHANG SUK KY ,  PARK HYO SOON ,  HONG JONG WAN ,  CHO HYUN JU ,  KIM JANG SOON ,  PARK YONG SU

IPC: H01L21/58

CPC classification number: H01L24/83 ,  C08G2650/40 ,  C08L71/00 ,  C08L79/08 ,  C08L81/06 ,  C09J7/20 ,  C09J163/00 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/85 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/451 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  Y10T428/24959 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/45099

Abstract: Provided are a die attach film, a semiconductor wafer, and a semiconductor packaging method. The die attach film can prevent generation of burrs or scattering of chips in a dicing process, and exhibits excellent expandability and pick-up characteristics in a die pressure-sensitive adhesive process. Further, the die attach film can prevent release, shifting, or deflection of a chip in a wire pressure-sensitive adhesive or molding process. Thus, it is possible to improve embeddability, inhibit warpage of a wafer or wiring substrate, and enhance productivity in a semiconductor packaging process.

公开(公告)号：EP2378616B1

公开(公告)日：2016-03-23

申请号：EP09837273.3

申请日：2009-12-28

Applicant: Xi'an Focuslight Technologies Co., Ltd.

Inventor： LIU, Xingsheng

IPC: H01S5/02 ,  H01L33/00 ,  H01L23/482

CPC classification number: H01S5/02476 ,  H01L2224/45144 ,  H01L2224/85203 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01S5/02272 ,  H01L2224/48

公开(公告)号：EP2684970A4

公开(公告)日：2015-03-04

申请号：EP12754623

申请日：2012-02-15

Applicant: JX NIPPON MINING & METALS CORP

Inventor： KANOU GAKU

IPC: C22B15/14 ,  C22C9/00 ,  C22C9/08 ,  C25C1/00 ,  C25C1/12 ,  C25C7/04 ,  H01L21/60

CPC classification number: B23K35/302 ,  C22C9/00 ,  C22C9/08 ,  C25C1/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01204 ,  H01L2924/01005 ,  H01L2924/01056 ,  H01L2924/01004 ,  H01L2924/01083 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01027 ,  H01L2924/01024 ,  H01L2924/01066 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01057 ,  H01L2924/01012 ,  H01L2924/01042 ,  H01L2924/0106 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01045 ,  H01L2924/01044 ,  H01L2924/01051 ,  H01L2924/0105 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01022 ,  H01L2924/0107 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01092 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2224/48

公开(公告)号：EP2325875A4

公开(公告)日：2014-08-06

申请号：EP09812805

申请日：2009-02-20

Applicant: OMRON TATEISI ELECTRONICS CO

Inventor： ONO KAZUYUKI ,  MAEKAWA TOMOFUMI

IPC: B81C3/00 ,  H01L21/52 ,  H01L23/552 ,  H04R13/00 ,  H04R19/00 ,  H04R19/04 ,  H05K1/18

CPC classification number: H04R31/006 ,  B81B2201/0257 ,  B81B2203/0392 ,  B81C3/001 ,  H01L23/552 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2731 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/16152 ,  H01L2924/164 ,  H04R19/005 ,  H04R19/04 ,  H01L2924/0715 ,  H01L2224/48 ,  H01L2224/45099

Abstract: A semiconductor element 53 has a diaphragm 72 arranged on an upper surface of a base 71 through which a cavity 73 having a truncated pyramid shape is penetrated vertically A die bonding pad 65 is formed on an upper surface of a printed wiring board like substrate 52, and the semiconductor element 53 has the lower surface adhered to the die bonding pad 65 with a die bonding resin 74. The die bonding pad 65is formed with an opening 76 by removing a region facing the lower end of a valley section 75 at the inner peripheral surface of the cavity 73 of the semiconductor element 53, so that the die bonding pad 65 does not contact the slower end of the valley section 75.

Abstract translation: 半导体元件53具有布置在基部71的上表面上的隔膜72，具有截顶棱柱形状的空腔73通过该上表面垂直地插入在印刷线路板状基板52的上表面上形成芯片接合焊盘65， 并且半导体元件53的下表面通过芯片接合树脂74粘合到芯片焊接焊盘65.裸片接合焊盘65通过除去面向内周的谷部75的下端的区域而形成有开口76 半导体元件53的空腔73的表面，使得芯片接合焊盘65不接触谷部75的较慢端。