公开(公告)号：EP2076818A2

公开(公告)日：2009-07-08

申请号：EP07808582.6

申请日：2007-09-17

申请人： ASML Netherlands B.V.

发明人： FRANKEN, Johannes, Christiaan, Leonardus ,  BANINE, Vadim, Yevgenyevich ,  WASSINK, Arnoud, Cornelis

IPC分类号： G03F7/20 ,  F16C32/06

CPC分类号： G03F7/70916 ,  B82Y10/00 ,  F16C32/0603 ,  F16C32/0685 ,  F16C33/02 ,  F16C33/72 ,  F16C2300/62 ,  G03F7/70033 ,  G03F7/70941

摘要： A contaminant trap apparatus (10) arranged in a path (R) of a radiation beam to trap contaminants emanating from a radiation source (50) configured to produce the radiation beam is disclosed. The contaminant trap (10) apparatus includes a rotor (10) having a plurality of channel forming elements (11) defining channels (ch) which are arranged substantially parallel to the direction of propagation of the radiation beam, the rotor (10) including electrically chargeable material and arranged to be electrically charged as a result of the operation of the radiation source (50); and a bearing (20) configured to rotatably hold the rotor (10) with respect to a rotor carrying structure (30), wherein the apparatus is configured to (i) control or redirect an electrical discharge (10) of the rotor (ED), or (ii) suppress an electrical discharge (ED) of the rotor (10), or (iii) both,(i) and (ii).

公开(公告)号：EP1426825B1

公开(公告)日：2009-03-11

申请号：EP03027402.1

申请日：2003-11-27

申请人： ASML Holding N.V.

发明人： Sewell, Harry

IPC分类号： G03F7/20 ,  G02B17/08

CPC分类号： G03F7/70941 ,  G02B17/08 ,  G02B17/0892 ,  G02B27/283 ,  G03F7/70225 ,  G03F7/70308

公开(公告)号：EP2020619A1

公开(公告)日：2009-02-04

申请号：EP08159489.7

申请日：2008-07-02

申请人： CANON KABUSHIKI KAISHA

发明人： Kawashima, Haruna ,  Saito, Nobuyuki

IPC分类号： G03F7/20

CPC分类号： G03F7/70983 ,  G03F7/70225 ,  G03F7/70591 ,  G03F7/70941

摘要： This invention provides an exposure apparatus which exposes a substrate (51) with a pattern formed on a reticle (3), and includes a projection optical system (1) including an optical element (11 - 14) and a reflecting surface (42) which reflects light toward the projection optical system (1). The exposure apparatus further includes a processor (P) which obtains information indicating a surface condition of the optical element (11 - 14) based on first light which is incident on the projection optical system (1) and reflected by the reflecting surface (42) and a surface of the optical element (11 - 14) and second light which is incident on the projection optical system (1) and not reflected by the reflecting surface (42) and the surface of the optical element (11 - 14).

摘要翻译： 本发明提供一种曝光装置，该曝光装置使形成在标线片（3）上的图案曝光基板（51），并且包括具有光学元件（11-14）和反射面（42）的投影光学系统 朝向投影光学系统（1）反射光。 曝光设备还包括处理器（P），其基于入射在投影光学系统（1）上并被反射表面（42）反射的第一光来获得指示光学元件（11-14）的表面状态的信息， 以及光学元件（11-14）的表面以及入射在投影光学系统（1）上并且没有被反射表面（42）和光学元件（11-14）的表面反射的第二光。

公开(公告)号：EP1995767A1

公开(公告)日：2008-11-26

申请号：EP07714302.2

申请日：2007-02-15

申请人： Nikon Corporation

发明人： MURAKAMI, Katsuhiko ,  KOMIYA, Takaharu

IPC分类号： H01L21/027 ,  G02B13/14 ,  G02B13/24 ,  G02B17/00 ,  G03F7/20

CPC分类号： G02B17/0663 ,  G02B5/0891 ,  G03F7/70941 ,  G03F7/70983

摘要： A projection optical system in which OoB irradiation dose on a wafer is reduced while degradation in optical characteristics is suppressed. The projection optical system comprises a first reflecting mirror exhibiting a reflectivity lower than a predetermined value to a second wavelength light different from a predetermined first wavelength light, and a second reflecting mirror exhibiting a reflectivity higher than the predetermined value to the second wavelength light. When the reflecting mirrors in the projection optical system is classified as reflecting mirrors (M1, M2, M5, M6) having a high ratio of overlapped reflection regions corresponding to two different points on the wafer, and reflecting mirrors (M3, M4) having a low ratio of overlapped reflection regions the uppermost stream reflecting mirror (M3) in the optical path of the projection optical system out of reflecting mirrors having a low ration of overlapped reflection regions is the second reflecting mirror.

公开(公告)号：EP1895571A1

公开(公告)日：2008-03-05

申请号：EP06767006.7

申请日：2006-06-20

申请人： NIKON CORPORATION

发明人： NAGAHASHI, Yoshitomo, NIKON CORPORATION ,  NAKANO, Katsushi, NIKON CORPORATION

IPC分类号： H01L21/027 ,  G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341 ,  G03F7/70858 ,  G03F7/70941 ,  G03F7/70975

摘要： An exposure apparatus (EX) includes; a supply outlet (8) that supplies a liquid (2) to an optical path space (K) of exposure light (EL), and a liquid supply system (10) that supplies an ionized ionic liquid (2A, 2B) to the supply outlet (8).

公开(公告)号：EP1883783A2

公开(公告)日：2008-02-06

申请号：EP06770323.1

申请日：2006-05-15

申请人： Zetetic Institute

发明人： HILL, Henry, A.

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G03F7/706 ,  G01J2009/0223 ,  G03F7/70591 ,  G03F7/7085 ,  G03F7/70941

摘要： Apparatus and methods for in situ and ex situ measurements of spatial profiles of the modulus of the complex amplitude and intensity of flare generated by an optical system. The in situ and ex situ measurements comprise interferometric and non-interferometric measurements that use an array of diffraction sites simultaneously located in an object plane of the optical system to increase signals related to measured properties of flare in a conjugate image plane. The diffraction sites generate diffracted beams with randomized relative phases. In general, the interferometric profile measurements employ phase-shifting point-diffraction interferometry to generate a topographical interference signal and the non-interferometric measurements are based on flare related signals other than topographic interference signals. The topographical interference signal and flare related signals are generated by a detector either as an electrical interference signal or electrical flare related signals or as corresponding exposure induced changes in a recording medium.

公开(公告)号：EP1843385A1

公开(公告)日：2007-10-10

申请号：EP06711856.2

申请日：2006-01-18

申请人： NIKON CORPORATION

发明人： IKEZAWA, Hironori ,  KUDO, Yuji ,  OMURA, Yasuhiro

IPC分类号： H01L21/027 ,  G03F7/20

CPC分类号： G03F7/70341 ,  G03F7/70808 ,  G03F7/70941

摘要： A liquid immersion type projection optical system that can stably prevent the outflow of immersion liquid into inside of an optical system and can maintain good imaging performance. In the projection optical system of the present invention, an optical path between a light transmitting member (Lp) disposed closest to a second surface (W) side and the second surface is filled with a liquid (Lm1) having a refractive index greater than 1.1, and a light shielding film (36) for shielding the passing of light is formed on the side surfaces (41, 42) of the light transmitting member. When D is a space between the second surface and the light shielding film, Θ is a maximum incident angle of an image forming beam which reaches the second surface, and Ym is a maximum image height on the second surface, the condition of 0.25

公开(公告)号：EP1189242A3

公开(公告)日：2006-11-08

申请号：EP01307880.3

申请日：2001-09-17

申请人： CANON KABUSHIKI KAISHA ,  MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： Itoga, Kenji ,  Kitayama, Toyoki ,  Uzawa, Shunichi ,  Watanabe, Yutaka

IPC分类号： G21K1/06 ,  G03F7/20 ,  G03F1/14

CPC分类号： G21K1/10 ,  G03F7/70008 ,  G03F7/70191 ,  G03F7/70941 ,  G21K1/06

摘要： An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

公开(公告)号：EP1349002B1

公开(公告)日：2006-06-28

申请号：EP03251875.5

申请日：2003-03-25

申请人： ASML MaskTools B.V.

发明人： Van den Broeke, Douglas ,  Chen, Jang Fung ,  Laidig, Thomas ,  Wampler, Kurt E. ,  Hsu, Duan-Fu Stephen

IPC分类号： G03F1/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

公开(公告)号：EP1526406A4

公开(公告)日：2006-05-31

申请号：EP03705313

申请日：2003-02-19

申请人： FUJITSU LTD

发明人： YAO TERUYOSHI ,  ASAI SATORU

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

CPC分类号： G03F7/70941 ,  G03F1/70 ,  G03F7/70591

摘要： Dummy patterns serving as sub-patterns are formed in virtual regions (2, 3). The numerical apertures of when only main patterns are formed in the virtual regions (2, 3) are 60 and 90%, respectively. The dummy pattern in the virtual region (2) is a light-shielding pattern of a rectangle having a side of 0.15 µm and the dummy pattern in the virtual pattern (3) is a light-shielding pattern of a rectangle having a side of 0.2 µm. The numerical apertures of the virtual regions (2, 3) are both 30%. When exposure using such a photomask is conducted, the amount of light produced by local flare is almost uniform at any point in the area where exposure light is applied on a photosensitive body. As a result, variation of the line width, even if caused, is uniform over the photomask.

摘要翻译： 用作子图案的虚拟图案形成在虚拟区域（2,3）中。 在虚拟区域（2,3）中仅形成主图案的数值孔径分别为60％和90％。 虚拟区域（2）中的虚拟图案是具有0.15μm的边的矩形的遮光图案，虚拟图案（3）中的虚拟图案是具有0.2的一边的矩形的遮光图案 微米。 虚拟区域（2,3）的数值孔径均为30％。 当进行使用这样的光掩模的曝光时，在曝光光被施加到感光体上的区域的任何点处，由局部耀斑产生的光量几乎是均匀的。 结果，即使导致的线宽的变化在光掩模上是均匀的。