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    VARIABLE SLIT DEVICE, ILLUMINATION DEVICE, EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
    2.
    发明公开
    VARIABLE SLIT DEVICE, ILLUMINATION DEVICE, EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：EP3392903A1

    公开(公告)日：2018-10-24

    申请号：EP18175986.1

    申请日：2007-06-08

    申请人： Nikon Corporation

    发明人： Muramatsu, Kouji

    IPC分类号： H01L21/027 ,  G03F7/20

    CPC分类号： G03F7/70466 ,  G03F7/70066 ,  G03F7/70425 ,  G03F7/70558

    摘要： A variable slit device (20) for forming illumination light having a slit shape extending in a longitudinal direction and a lateral direction. A first light intensity setting unit (21) sets a first light intensity distribution, which is the light intensity distribution of a peripheral portion, which is one of a pair of peripheral portions (21a) extending along the longitudinal direction of the slit shape. A second light intensity setting unit (22) sets a second light intensity distribution, which is the light intensity distribution of a peripheral portion, which is the other one of the pair of peripheral portions (22a). Selection members (23, 24) select a first portion of a light beam that has the first light intensity distribution and a second portion of the light beam that has the second light intensity distribution.

    MERGING LITHOGRAPHY PROCESSES FOR GATE PATTERNING
    6.
    发明公开
    MERGING LITHOGRAPHY PROCESSES FOR GATE PATTERNING 审中-公开
    ZUSAMMENFÜHRUNGVON LITHOGRAFIEPROZESSEN ZUR GATE-STRUKTURIERUNG

    公开(公告)号：EP3072152A1

    公开(公告)日：2016-09-28

    申请号：EP14793414.5

    申请日：2014-10-24

    申请人： Qualcomm Incorporated

    发明人： SONG, Stanley Seungchul ,  WANG, Zhongze ,  YEAP, Choh Fei

    IPC分类号： H01L21/8234 ,  G03F7/20 ,  H01L27/02

    CPC分类号： H01L29/4238 ,  G03F7/70466 ,  H01L21/28123 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/0886

    摘要： Methods for fabricating devices on a die, and devices on a die. A method may include patterning a first region to create a first gate having a first gate length and a first contacted polysilicon pitch (CPP) with a first process. The first CPP is smaller than a single pattern lithographic limit. The method also includes patterning the first region to create a second gate having a second gate length or a second CPP with a second process. The second CPP is smaller than the single pattern lithographic limit. The second gate length is different than the first gate length.

    摘要翻译： 在模具上制造器件的方法以及管芯上的器件。 一种方法可以包括图案化第一区域以产生具有第一栅极长度的第一栅极和具有第一工艺的第一接触多晶硅间距（CPP）。 第一个CPP小于单一图案光刻极限。 该方法还包括图案化第一区域以产生具有第二栅极长度的第二栅极或具有第二工艺的第二CPP。 第二个CPP小于单模光刻极限。 第二栅极长度不同于第一栅极长度。

    Mask data generation program, mask data generation method, mask fabrication method, exposure method, and device manufacturing method
    9.
    发明公开
    Mask data generation program, mask data generation method, mask fabrication method, exposure method, and device manufacturing method 审中-公开
    屏蔽数据生成程序，屏蔽数据生成方法中，掩模制造方法，曝光方法，以及用于制备所述设备

    公开(公告)号：EP1903390A3

    公开(公告)日：2013-03-13

    申请号：EP07018091.4

    申请日：2007-09-14

    申请人： CANON KABUSHIKI KAISHA

    发明人： Yamazoe, Kenji

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70466 ,  G03F1/68 ,  G03F7/70425

    摘要： A mask data generation program (47) causes the computer (1) to execute: Fourier-Transforming a function indicating an effective light source to generate a coherent map (42) expressing a coherence distribution on the object plane of the projection optical system (140), on which the mask (130) is arranged; specifying a reference vector from the origin of the coherent map to a region where the coherence is less than a reference value; selecting one element from a pattern including a plurality of elements, and removing, from the pattern, an element existing at a position matching the terminal point of the reference vector arranged such that the center of the selected element serves as the starting point, to generate data of a first pattern different from the pattern; and generating data of a second pattern including the element removed in generating the data of the first pattern.