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134 条记录 (耗时 0.023 秒)

    METHOD OF INSPECTING A SUBSTRATE, METROLOGY APPARATUS, AND LITHOGRAPHIC SYSTEM
    2.
    发明公开
    METHOD OF INSPECTING A SUBSTRATE, METROLOGY APPARATUS, AND LITHOGRAPHIC SYSTEM 审中-公开
    检查基板，计量器具和光刻系统的方法

    公开(公告)号：EP3309616A1

    公开(公告)日：2018-04-18

    申请号：EP16193944.2

    申请日：2016-10-14

    申请人： ASML Netherlands B.V.

    发明人： TUKKER, Teunis, Willem ,  SINGH, Amandev ,  VAN DER ZOUW, Gerbrand

    IPC分类号： G03F7/20 ,  G01B9/02 ,  G01N21/95 ,  G01N21/956

    CPC分类号： G03F7/70633 ,  G01B9/02016 ,  G01B11/272 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/95676 ,  G03F7/70625 ,  G03F7/70941

    摘要： Metrology apparatus and methods are disclosed. In one arrangement, a substrate is inspected. A source beam of radiation (131) emitted by a radiation source (50) is split into a measurement beam (132) and a reference beam (133). A first target is illuminated with the measurement beam, the first target being on the substrate (W). A second target (90) is illuminated with the reference beam, the second target being separated from the substrate. First scattered radiation (134) is collected from the first target and delivered to a detector (80). Second scattered radiation (135) is collected from the second target and delivered to the detector. The first scattered radiation interferes with the second scattered radiation at the detector. The first target comprises a first pattern. The second target comprises a second pattern, or a pupil plane image of the second pattern. The first pattern is geometrically identical to the second pattern, the first pattern and the second pattern are periodic and a pitch of the first pattern is identical to a pitch of the second pattern, or both.

    摘要翻译： 计量器具和方法被公开。 在一种布置中，检查衬底。 由辐射源（50）发射的源辐射束（131）被分成测量束（132）和参考束（133）。 测量光束照射第一个目标，第一个目标位于衬底（W）上。 用参考光束照射第二目标（90），第二目标与衬底分离。 从第一目标收集第一散射辐射（134）并传送到检测器（80）。 从第二个目标收集第二散射辐射（135）并传送到检测器。 第一散射辐射在检测器处干扰第二散射辐射。 第一个目标包括第一个模式。 第二目标包括第二图案或第二图案的瞳面图像。 第一图案在几何上与第二图案相同，第一图案和第二图案是周期性的，并且第一图案的间距与第二图案的间距相同或者两者。

    PHOTOMASK
    5.
    发明授权
    PHOTOMASK 有权
    光掩膜

    公开(公告)号：EP1526406B1

    公开(公告)日：2011-11-09

    申请号：EP03705313.9

    申请日：2003-02-19

    申请人： Fujitsu Semiconductor Limited

    发明人： YAO, Teruyoshi, FUJITSU LIMITED ,  ASAI, Satoru, FUJITSU LIMITED

    IPC分类号： G03F1/08 ,  H01L21/027

    CPC分类号： G03F7/70941 ,  G03F1/70 ,  G03F7/70591

    摘要： Dummy patterns serving as sub-patterns are formed in virtual regions (2, 3). The numerical apertures of when only main patterns are formed in the virtual regions (2, 3) are 60 and 90%, respectively. The dummy pattern in the virtual region (2) is a light-shielding pattern of a rectangle having a side of 0.15 µm and the dummy pattern in the virtual pattern (3) is a light-shielding pattern of a rectangle having a side of 0.2 µm. The numerical apertures of the virtual regions (2, 3) are both 30%. When exposure using such a photomask is conducted, the amount of light produced by local flare is almost uniform at any point in the area where exposure light is applied on a photosensitive body. As a result, variation of the line width, even if caused, is uniform over the photomask.

    PROJECTION OPTICAL SYSTEM, ALIGNER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    7.
    发明公开
    PROJECTION OPTICAL SYSTEM, ALIGNER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    投影光学系统对准及其制造方法半导体元件

    公开(公告)号：EP1995767A4

    公开(公告)日：2010-10-06

    申请号：EP07714302

    申请日：2007-02-15

    申请人： NIPPON KOGAKU KK

    发明人： MURAKAMI KATSUHIKO ,  KOMIYA TAKAHARU

    IPC分类号： H01L21/027 ,  G02B13/14 ,  G02B13/24 ,  G02B17/00 ,  G03F7/20

    CPC分类号： G02B17/0663 ,  G02B5/0891 ,  G03F7/70941 ,  G03F7/70983

    摘要： A projection optical system in which OoB irradiation dose on a wafer is reduced while degradation in optical characteristics is suppressed. The projection optical system comprises a first reflecting mirror exhibiting a reflectivity lower than a predetermined value to a second wavelength light different from a predetermined first wavelength light, and a second reflecting mirror exhibiting a reflectivity higher than the predetermined value to the second wavelength light. When the reflecting mirrors in the projection optical system is classified as reflecting mirrors (M1 M2, M5, M6) having a high ratio of overlapped reflection regions corresponding to two different points on the wafer, and reflecting mirrors (M3, M4) having a low ratio of overlapped reflection regions the uppermost stream reflecting mirror (M3) in the optical path of the projection optical system out of reflecting mirrors having a low ration of overlapped reflection regions is the second reflecting mirror.

    摘要翻译： 一种投影光学系统，其中，同时在光学特性的劣化被抑制的晶片上OOB照射剂量减少。 投影光学系统包括：第一反射镜的表现出的反射率大于预定值，以第二波长的光从预定的第一波长的光不同更低，并且第二反射镜表现出比预定值对所述第二波长的光更高的反射率。 当在投影光学系统中的反射镜被分类为反射具有相应于两个不同的点在晶片上的重叠反射区域的高比率反射镜（M1，M2，M5，M6），以及反射镜（M3，M4），其具有 出具有重叠的反射区域的低定量反射镜的在投影光学系统的光路重叠反射区域最上游的反射镜（M3）的低比率是第二反射镜。

    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD
    8.
    发明公开
    PROJECTION OBJECTIVE FOR MICROLITHOGRAPHY, MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS WITH SAID PROJECTION OBJECTIVE, MICROLITHOGRAPHIC MANUFACTURING METHOD FOR COMPONENTS, AS WELL AS A COMPONENT MANUFACTURED WITH SAID METHOD 有权
    一种用于散射光用于微光刻的投射物镜的调整过程

    公开(公告)号：EP2165241A1

    公开(公告)日：2010-03-24

    申请号：EP08784500.4

    申请日：2008-05-21

    申请人： Carl Zeiss SMT AG

    发明人： KRAEHMER, Daniel ,  KAMENOV, Vladimir ,  TOTZECK, Michael ,  GOEHNERMEIER, Aksel

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70958 ,  G03F7/70308 ,  G03F7/70341 ,  G03F7/70591 ,  G03F7/70941

    摘要： Projection objectives of current designs for use in microlithography have a stray light component which varies over the exposure field. The variation of the stray light component over the field can be reduced and/or adapted to the variation of another projection objective by introducing additional stray light. This is accomplished advantageously by pre-adapting or altering the surface roughness of a field- proximate surface and/or by installing optical elements with specifically targeted light scattering properties in a pupil plane. In this, the invention makes use of the observation that the variation of the stray light component over the field and the different respective variations of the stray light components of different projection objectives present greater problems to the manufacturers of semiconductor components than the stray light component itself. Particularly in projection objectives for immersion lithography where a strongly scattering polycrystalline material is used, the invention provides a way to compensate for the increased variation of the stray light component of these projection objectives over the field and to thereby arrive at a stray light component that is constant over the entire field. Furthermore, particularly in the case of projection objectives for EUV lithography, which exhibit a higher stray light component than conventional projection objectives, it is possible to adapt different projection objectives to each other in regard to the stray light component and/or the variation of the stray light component over the exposure field.

    MEASURING THE EFFECT OF FLARE ON LINE WIDTH
    10.
    发明授权
    MEASURING THE EFFECT OF FLARE ON LINE WIDTH 有权
    测量FLARE对线宽

    公开(公告)号：EP1654592B1

    公开(公告)日：2008-10-01

    申请号：EP04744097.9

    申请日：2004-07-31

    申请人： NXP B.V.

    发明人： ZIGER, David ,  LEROUX, Pierre, c/o NXP semiconductors-IP Dept.

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70941 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70591 ,  G03F7/70616

    摘要： In photo-lithography, one may assess the effect of flare due to various exposure tools. In an example embodiment, in a photo-lithography process on a photo resist coated substrate, there is a method (600) for determining the effect of flare on line shortening. The method (600) comprises, at a first die position on the substrate and in a first exposure, printing a first mask (610) that includes a flare pattern (110) corresponding to one corner of the first mask (610), and in a second exposure, printing a second mask (620) that includes another flare pattern corresponding to an opposite corner of the second mask. At a second die position on the substrate, a composite mask pattern (630) based on features of the first mask and the second is printed. The printed patterns (640) are developed and measurements (650) are obtained therefrom. The effect of flare (660) is determined as a function of the measurements.