公开(公告)号：EP2319087A1

公开(公告)日：2011-05-11

申请号：EP09763653.4

申请日：2009-06-11

Applicant: Solar Implant Technologies Inc.

Inventor： ADIBI, Babak ,  MURRER, Edward, S.

IPC: H01L31/0224 ,  H01L31/0236

CPC classification number: H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Solar cells in accordance with the present invention have reduced ohmic losses. These cells include photo-receptive regions that are doped less densely than adjacent selective emitter regions. The photo-receptive regions contain multiple four-sided pyramids that decrease the amount of light lost to the solar cell by reflection. The smaller doping density in the photo-receptive regions results in less blue light that is lost by electron-hole recombination. The higher doping density in the selective emitter region allows for better contacts with the metallic grid coupled to the multiple emitter regions. Preferably, the selective emitter and photo-receptive regions are both implanted using a narrow ion beam containing the dopants.

公开(公告)号：EP2040311A3

公开(公告)日：2011-05-11

申请号：EP08252799.5

申请日：2008-08-22

Applicant: Sanyo Electric Co., Ltd.

Inventor： Nakai, Takuo ,  Shima, Masaki

IPC: H01L31/18 ,  H01L31/048 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/0376 ,  H01L31/048 ,  H01L31/072 ,  Y02E10/50

Abstract: According to a solar cell manufacturing method of an embodiment, in a process of forming a surface protection layer by transferring a resin material applied to a cylindrical surface of a cylindrical blanket, to a light receiving surface of a solar cell substrate, the blanket is rotated on the light receiving surface of the solar cell substrate in a first direction in which the multiple thin wire electrodes extend.

Abstract translation: 根据本实施方式的太阳能电池的制造方法，在将施加到圆筒形橡皮布的圆筒形表面的树脂材料转印到太阳能电池基板的受光面的表面保护层的形成工序中， 在多个细线电极延伸的第一方向上在太阳能电池基板的受光面上。

公开(公告)号：EP2311102A1

公开(公告)日：2011-04-20

申请号：EP09774087.2

申请日：2009-06-23

Applicant: Sunpower Corporation

Inventor： COUSINS, Peter, John

IPC: H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/056 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A bipolar solar cell (100) includes a backside junction formed by a silicon substrate (101) and a first doped layer (108) of a first dopant type on the backside of the solar cell. A second doped layer (106) of a second dopant type makes an electrical connection to the substrate (101) from the front side of the solar cell (100). A first metal contact (110) of a first electrical polarity electrically connects to the first doped layer (108) on the backside of the solar cell, and a second metal contact (102) of a second electrical polarity electrically connects to the second doped layer (106) on the front side of the solar cell (100). An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell (100).

Abstract translation: 一种双极太阳能电池包括：由硅基板形成的背面结和在太阳能电池的背面上的第一掺杂剂类型的第一掺杂层。 第二掺杂剂类型的第二掺杂层使得从太阳能电池的前侧到基板的电连接。 第一电气极性的第一金属接触电连接到在太阳能电池的背面上的第一掺杂层，和第二电极性的第二金属接触电连接到所述太阳能电池的前侧上的第二掺杂层。 外部电路可以电连接到第一和第二金属接触，以由太阳能电池供电。

公开(公告)号：EP2246897A2

公开(公告)日：2010-11-03

申请号：EP10161609.2

申请日：2010-04-30

Applicant: FUJIFILM Corporation

Inventor： Kawano, Tetsuo ,  Hirai, Hiroyuki ,  Suzuki, Masayuki

IPC: H01L31/0336 ,  H01L31/072 ,  H01L31/18

CPC classification number: H01L31/18 ,  B82Y30/00 ,  H01L31/072 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: Providing a technology for forming a metal oxide layer covering an underlayer without any cracks. Using a manufacturing method which includes a process (A) for forming a particle layer of a plurality of one or more types of particles consisting mainly of a metal oxide and/or a metal hydroxide, and a process (B) for forming, using a reaction solution which includes one or more types of metal ions, a metal oxide layer consisting mainly of an oxide of the one or more types of metal ions on the particle layer so as to cover the particle layer without any cracks by a liquid phase method under a pH condition in which at least a portion of the plurality of particles remains without being dissolved by the reaction solution, a layered film having a layered structure of the particle layer and the metal oxide layer is manufactured.

Abstract translation: 提供技术用于形成覆盖在下层没有任何裂缝的金属氧化物层。 使用用于形成制造方法，其包括用于形成一个或多个类型的主要由金属氧化物和/或金属氢氧化物的粒子的多个粒子层的方法（A），和工序（B），使用 反应溶液，其包括一种或多种类型的金属离子，金属氧化物层主要由一种或多种类型的颗粒层上的金属离子的氧化物，从而通过下液相法以覆盖而没有任何裂缝粒子层 其中至少颗粒的所述多个的一部分保留而不被反应溶液被溶解的pH条件下，粒子层和金属氧化物层的层状结构的层状具有薄膜制造。

公开(公告)号：EP2016625B1

公开(公告)日：2009-09-02

申请号：EP07755589.4

申请日：2007-04-18

Applicant: Dow Corning Corporation ,  ITN Energy Systems, INC.

Inventor： ANDERSON, Nicole R. ,  KATSOULIS, Dimitris Elias ,  REESE, Herschel Henry ,  ZHU, Bizhong ,  WOODS, Lawrence M. ,  ARMSTRONG, Joseph H. ,  RIBELIN, Rosine M.

IPC: H01L31/0336 ,  H01L31/032 ,  H01L31/072 ,  C08L83/04

CPC classification number: H01L31/0749 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08L83/04 ,  C09D183/04 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03928 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/072 ,  Y02E10/541 ,  Y02P70/521 ,  C08L83/00

Abstract: A copper indium diselenide (CIS)-based photovoltaic device includes a CIS- based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500 °C to obtain maximum efficiency of the device.

Abstract translation: 基于铜铟二硒化物（CIS）的光伏器件包括基于CIS的太阳能吸收器层，其包括铜，铟和硒。 CIS基光伏器件还包括由有机硅组合物形成的基板。 由于基材由硅氧烷组合物形成，所以该基材既柔软又足以承受超过500℃的退火温度以获得装置的最大效率。

公开(公告)号：EP2082425A1

公开(公告)日：2009-07-29

申请号：EP07839257.8

申请日：2007-10-05

Applicant: Hitachi Chemical Company, Ltd. ,  Hitachi Chemical Research Center, Inc.

Inventor： WU, Yongxian

IPC: H01L27/00

CPC classification number: H01L31/035281 ,  B82Y10/00 ,  H01L29/0665 ,  H01L31/072 ,  Y02E10/50 ,  Y10S438/93 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/768 ,  Y10S977/789

Abstract: A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.

公开(公告)号：EP2064734A2

公开(公告)日：2009-06-03

申请号：EP07842903.2

申请日：2007-09-20

Applicant: The Board of Trustees of the University of Illinois

Inventor： ROGERS, John A. ,  NUZZO, Ralph G. ,  MEITL, Matthew ,  KO, Heung Cho ,  YOON, Jongseung ,  MENARD, Etienne ,  BACA, Alfred J.

IPC: H01L21/28

CPC classification number: H01L31/0735 ,  B81C1/0046 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/7813 ,  H01L29/155 ,  H01L29/20 ,  H01L31/03046 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/184 ,  H01L31/1844 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T156/1195 ,  H01L2924/00

Abstract: Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

公开(公告)号：EP2021533A1

公开(公告)日：2009-02-11

申请号：EP07719755.6

申请日：2007-05-15

Applicant: Arise Technologies Corporation

Inventor： SIVOTHTHAMAN, Siva ,  FARROKH-BAROUGHI, Mahdi

IPC: C30B25/20 ,  C30B25/02 ,  H01L31/042 ,  H01L31/18 ,  H01L49/02

CPC classification number: H01L31/1804 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/02634 ,  H01L31/072 ,  H01L31/0747 ,  Y02E10/547 ,  Y02P70/521

Abstract: A low temperature method and system configuration for depositing a doped silicon layer on a silicon substrate of a selected grade. The silicon substrate for functioning as a light absorber and the doped silicon layer for functioning as an emitter. The method comprises the acts of: positioning the silicon substrate in a chamber suitable for chemical vapour deposition of the doped silicon layer on the silicon substrate, an external surface of the silicon substrate suitable for promoting crystalline film growth; using a plurality of process parameters for adjusting growth of the doped silicon layer, the plurality of process parameters including a first process parameter of a process temperature for inhibiting diffusion of dopant atoms into the external surface of the silicon substrate, and a second process parameter of a hydrogen dilution level for providing excess hydrogen atoms to affect a layer crystallinity of the atomic structure of the doped silicon layer; exposing the external surface of the silicon substrate in the chamber to a vapour at appropriate ambient chemical vapour deposition conditions, the vapour including silicon atoms, dopant atoms and the excess hydrogen atoms, the atoms for use in growing the doped silicon layer; and originating growth of the doped silicon layer on the external surface to form an interface between the doped silicon layer and the silicon substrate, such that the doped silicon layer includes first atomic structural regions having a higher quality of the layer crystallinity next to the interface with adjacent second atomic structural regions having a lower quality of the layer crystallinity with increasing concentrations of crystal defects for increasing thickness of the doped silicon layer from the interface. The resultant silicon substrate and doped layer (or thin film) can be used in solar cell manufacturing.

公开(公告)号：EP1964180A1

公开(公告)日：2008-09-03

申请号：EP06830706.5

申请日：2006-12-19

Applicant: Shell Erneuerbare Energien GmbH

Inventor： NIESEN, Thomas ,  PROBST, Volker

IPC: H01L31/0336 ,  H01L31/072 ,  H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/0336 ,  H01L31/072 ,  Y02E10/541

Abstract: A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapour deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapour deposition; and wherein the second layer is arranged between the first and third layers.

公开(公告)号：EP1935031A2

公开(公告)日：2008-06-25

申请号：EP06793915.7

申请日：2006-09-29

Applicant: BASF SE

Inventor： STERZEL, Hans-Josef

IPC: H01L31/0256

CPC classification number: H01L31/032 ,  H01L31/02963 ,  H01L31/0321 ,  H01L31/072 ,  Y02E10/50

Abstract: The invention relates to a photovoltaic cell comprising a photovoltaically active semi-conductor material. The photovoltaically active semi-conductor material is a material of formula (I), formula (II) or a combination therefrom, comprising (I) (Zn1-xMgxTe)1-y(MnTem)y and (II) (ZnTe)1-y(MeaMb)y, whereby MnTem and MeaMb is a doping agent, wherein M represents at least one element selected from the groups Si, Ge, Sn, Pb, Sb and Bi and Me represents at least one element selected from the groups Mg and Zn, wherein x = 0 - 0,5 y = 0,0001 - 0,05 n = 1 - 2 m = 0,5 - 4 a = 1 - 5 and b = 1 - 3.