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60 条记录 (耗时 0.012 秒)

    Recovery of lower-boiling silanes in A CVD process
    44.
    发明公开
    Recovery of lower-boiling silanes in A CVD process 失效
    在CVD过程中回收低沸点硅烷

    公开(公告)号：EP0334664A3

    公开(公告)日：1990-09-05

    申请号：EP89302944.7

    申请日：1989-03-23

    申请人： HEMLOCK SEMICONDUCTOR CORPORATION

    发明人： Arvidson, Arvid Neil ,  Pasek, David John

    IPC分类号： C23C16/24 ,  C23C16/44 ,  C01B33/04 ,  C01B33/107

    CPC分类号： C23C16/44 ,  C01B33/10773 ,  C23C16/24

    摘要： A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising:
    (1) forming and depositing semiconductor silicon on a heated substrate; (2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/ deposition reactor; (3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon; (4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlorosilane and dichlorosilane and increased in content of trichlorosilane; and (5) isolating and separating the trichlorosilane.

    Trace metals analysis in semiconductor material
    45.
    发明公开
    Trace metals analysis in semiconductor material 失效
    分析Halbleitern的von Metallspuren。

    公开(公告)号：EP0349117A2

    公开(公告)日：1990-01-03

    申请号：EP89305236.5

    申请日：1989-05-24

    申请人： HEMLOCK SEMICONDUCTOR CORPORATION

    发明人： McCormick, James Robert ,  Hwang, Lydia Lee-York

    IPC分类号： G01N33/00 ,  G01N1/28

    CPC分类号： C30B13/00 ,  G01N1/40

    摘要： A method for analyzing and quantifying the individual trace metals content of a semiconductor material in the low to sub-parts per billion (ppba) range. The method comprises (A) float-zone refining of a sample of the semiconductor material creating a melt zone containing essentially all the trace metals of the sample; (B) cooling the melt zone to form a solid zone concentrated in trace metals; (C) separating the solid zone concentrated in trace metals from the sample of the semiconductor material; (D) converting the solid zone concentrated in trace metals into a form suitable for trace metals analysis; (E) analyzing the solid zone with known trace metals analytical techniques; and (F) calculating total trace metals from these analytical results. This method can also be applied to the small tip which forms on the side of the solid zone.

    摘要翻译： 用于分析和量化半导体材料中每个十亿分之几（ppba）范围内的各种痕量金属含量的方法。 该方法包括（A）半导体材料的样品的漂浮区精炼，形成含有基本上所有样品的痕量金属的熔融区域; （B）冷却熔融区以形成浓缩在微量金属中的固体区; （C）从半导体材料的样品中分离浓缩在痕量金属中的固体区域; （D）将微量金属中浓缩的固体区转化成适合于痕量金属分析的形式; （E）用已知的痕量金属分析技术分析固体区; 和（F）从这些分析结果计算总痕量金属。 该方法也可以应用于在固体区域形成的小尖端。

    PROCESS FOR PREPARING MONOHYDROGENTRIHALOSILANES
    46.
    发明公开
    PROCESS FOR PREPARING MONOHYDROGENTRIHALOSILANES 审中-公开
    制备单羟基三卤硅烷的方法

    公开(公告)号：EP3233732A1

    公开(公告)日：2017-10-25

    申请号：EP15870627.5

    申请日：2015-11-25

    申请人： Dow Corning Corporation ,  Hemlock Semiconductor Corporation

    发明人： HARDER, Patrick, J. ,  SWENSON, Tyler ,  WILLIAMS, David

    IPC分类号： C01B33/107 ,  C03B29/06 ,  C08G77/04

    摘要： A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.

    摘要翻译： 公开了一种制备包含一氢三卤代硅烷的产物的方法。 该方法包括以下步骤：1）首先用包括新鲜硅和再循环接触物质的接触物质装载反应器，其中再循环接触物质是在无机直接法反应的生产阶段期间或之后获得的，用于生产 monohydrogentrihalosilane; 然后2）向反应器中加入卤化氢和另外的新鲜硅，由此形成产物。

    METHODS OF FORMING AND ANALYZING DOPED SILICON
    47.
    发明公开
    METHODS OF FORMING AND ANALYZING DOPED SILICON 审中-公开
    VERFAHREN ZUR HERSTELLUNG UNDANALYZE VON DOTIERTEM SILICIUM

    公开(公告)号：EP2931658A1

    公开(公告)日：2015-10-21

    申请号：EP13811317.0

    申请日：2013-12-04

    申请人： Hemlock Semiconductor Corporation

    发明人： KRESZOWSKI, Douglas, Homer ,  LANNING, Elizabeth

    IPC分类号： C01B33/02 ,  C30B13/00 ,  C30B29/06 ,  G01N21/64

    CPC分类号： C30B13/10 ,  C01B33/02 ,  C30B29/06 ,  G01N21/274 ,  G01N21/278 ,  G01N21/6489 ,  G01N2201/127

    摘要： Methods of forming and analyzing doped monocrystalline silicon each comprise the steps of providing: a vessel, particulate silicon, a dopant, and a float-zone apparatus. The vessel for each method comprises silicon and defines a cavity. The methods each further comprise the steps of combining the particulate silicon and the dopant to form treated particulate silicon, and disposing the treated particulate silicon into the cavity of the vessel. The methods yet further comprise the step of float-zone processing the vessel and the treated particulate silicon into doped monocrystalline silicon with the float-zone apparatus. The analytical method further comprises the step of providing an instrument. The analytical method yet further comprises the steps of removing a piece from the doped monocrystalline silicon, and determining the concentration of the dopant in the piece with the instrument. The methods are useful for forming and analyzing monocrystalline silicon having various types and/or concentrations of dopant(s).

    摘要翻译： 形成和分析掺杂单晶硅的方法各自包括提供：容器，颗粒状硅，掺杂剂和浮法区域装置的步骤。 用于每种方法的容器包括硅并限定空腔。 所述方法还包括将颗粒状硅和掺杂剂组合以形成经处理的颗粒状硅，并将经处理的颗粒硅设置在容器的空腔中的步骤。 该方法还包括使用浮区设备将容器和经处理的颗粒硅浮选处理成掺杂的单晶硅的步骤。 分析方法还包括提供仪器的步骤。 该分析方法还包括从掺杂的单晶硅去除一块的步骤，以及用仪器确定该片中的掺杂剂的浓度。 该方法可用于形成和分析具有各种类型和/或浓度的掺杂剂的单晶硅。

    CVD APPARATUS
    49.
    发明公开
    CVD APPARATUS 审中-公开
    化学气相淀积设备

    公开(公告)号：EP2486167A1

    公开(公告)日：2012-08-15

    申请号：EP10771254.9

    申请日：2010-10-08

    申请人： Hemlock Semiconductor Corporation

    发明人： HILLABRAND, David ,  MCCOY, Keith

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4404 ,  C01B33/035 ,  C23C16/4418

    摘要： A manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus are provided. The manufacturing apparatus includes a housing that defines a chamber. The housing also defines an inlet for introducing a gas into the chamber and an outlet for exhausting the gas from the chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber. The electrode includes a shaft having a first end and a second end, and a head disposed on one of the ends of the shaft. The head of the electrode has an exterior surface having a contact. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has a greater wear resistance than nickel as measured in mm
    3 /N*m.

    MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND AN ELECTRODE FOR USE THEREIN
    50.
    发明公开
    MANUFACTURING APPARATUS FOR DEPOSITING A MATERIAL AND AN ELECTRODE FOR USE THEREIN 审中-公开
    生产装置：用于使用为了物质的脱落和电极的

    公开(公告)号：EP2486166A1

    公开(公告)日：2012-08-15

    申请号：EP10771252.3

    申请日：2010-10-08

    申请人： Hemlock Semiconductor Corporation

    发明人： HILLABRAND, David ,  MCCOY, Keith

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4404 ,  C01B33/035 ,  C23C16/4418

    摘要： A manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus are provided. The manufacturing apparatus includes a housing that defines a chamber. The housing also defines an inlet for introducing a gas into the chamber and an outlet for exhausting the gas from the chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber. The electrode has an exterior surface. The exterior surface has a contact region that is adapted to contact a socket. A contact region coating is disposed on the contact region of the electrode for maintaining electrical conductivity between the electrode and the socket. The contact region coating has an electrical conductivity of at least 7x10
    6 Siemens/meter at room temperature and a greater wear resistance than nickel as measured in mm
    3 /N*m.