公开(公告)号：EP0803138A1

公开(公告)日：1997-10-29

申请号：EP96935203.0

申请日：1996-10-30

申请人： PHILIPS ELECTRONICS N.V.

发明人： CORNELISSEN, Hugo, John ,  SAVERT, Cornelis, Johannes ,  LEIJTEN, Johannes, Theodorus, Henricus

IPC分类号： H01J29 ,  H01J31 ,  H01S3 ,  H01S5

CPC分类号： H01S3/0959 ,  H01J29/89 ,  H01J2229/4827 ,  H01S5/0222 ,  H01S5/04 ,  H01S5/30 ,  H01S5/32325

摘要： An electron-optical device comprising a cathode ray tube with an envelope comprising an electron gun for producing an electron beam, whose inner surface carries a multi-element layer electrode such as a helical structure formed from a high-ohmic resistance material, which structure constitutes a focusing lens. A deflection system is used for moving the focused electron beam across a laser crystal arranged in the tube. Due to the laser action of the crystal, a scanning laser is realized. The laser light leaves a window in the tube envelope. The window extends at an angle between 20° and 60° to the longitudinal axis of the tube which is parallel to the electron beam incident on the laser crystal. Used in, inter alia, projection tubes and electron beam-pumped lasers (for example, scanning lasers).

公开(公告)号：EP0259888B1

公开(公告)日：1993-12-22

申请号：EP87113344.3

申请日：1987-09-11

申请人： NEC CORPORATION

发明人： Shibanuma, Naoki c/o NEC Corporation

IPC分类号： H01S3/025 ,  H01S3/04 ,  G02B6/42

CPC分类号： H01S5/02284 ,  G02B6/4202 ,  G02B6/4207 ,  G02B6/4233 ,  H01S5/02208 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/02415

公开(公告)号：EP3447358B1

公开(公告)日：2024-09-18

申请号：EP18188195.4

申请日：2018-08-09

IPC分类号： H01S5/02216 ,  H01S5/0222 ,  H01S5/02255 ,  H01S5/026 ,  H01S5/068 ,  F21K9/00 ,  F21S41/16 ,  F21S41/176 ,  F21S43/16 ,  H01S5/00 ,  H01S5/323 ,  H01S5/40 ,  H01S5/183

CPC分类号： H01S5/02216 ,  H01S5/0222 ,  H01S5/32341 ,  H01S5/4025 ,  H01S2301/20620130101 ,  F21S41/16 ,  F21S43/16 ,  F21S41/176 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/0087

公开(公告)号：EP3005499A1

公开(公告)日：2016-04-13

申请号：EP14736003.6

申请日：2014-05-30

申请人： Solus Technologies Limited

发明人： HAMILTON, Craig James ,  MAKER, Gareth Thomas

IPC分类号： H01S5/024 ,  H01S3/23 ,  H01S5/183 ,  H01S5/022

CPC分类号： H01S5/02469 ,  H01S3/0604 ,  H01S3/2308 ,  H01S5/0222 ,  H01S5/02256 ,  H01S5/02423 ,  H01S5/02476 ,  H01S5/02484 ,  H01S5/183 ,  H01S5/50

摘要： The present invention describes a method and apparatus for mounting a semiconductor disc laser (SDL). In particular there is described a cooling apparatus assembly (12) for mounting the semiconductor disc laser (1) the cooling apparatus assembly comprising a crystalline heat spreader (8) made of diamond, sapphire or SiC and optically contacted to the SDL (1). The apparatus further comprises a heatsink (13) made of copper and a recess (16) located on a first surface (15) of the heatsink. A pliable filler material (17) which may be In or an In alloy is provided within the recess (16) such that when a sealing plate (19) is fastened to the heatsink the SDL (1) is hermetically sealed within the recess. Hermetically sealing the SDL within the recess is found to significantly increase the lifetime of the device comprising the SDL. The heat sink (13) may be water cooled with pipes (14) delivering the water. In case the sealing plate (19) is made from for example Invar, it has an aperture (20).

摘要翻译： 本发明描述了一种用于安装半导体盘式激光器（SDL）的方法和装置。 特别地，描述了一种用于安装半导体盘式激光器（1）的冷却装置组件（12），该冷却装置组件包括由金刚石，蓝宝石或SiC制成的结晶散热器（8），并与SDL（1）光学接触。 该设备还包括由铜制成的散热器（13）和位于散热器的第一表面（15）上的凹部（16）。 可以在凹部（16）内设置可以为In或In合金的柔性填充材料（17），使得当密封板（19）紧固到散热器时，SDL（1）被气密地密封在凹部内。 发现在凹槽内密封SDL显着增加了包括SDL的设备的使用寿命。 散热器（13）可以用输送水的管道（14）进行水冷。 在密封板（19）由例如殷钢制成的情况下，其具有孔（20）。

公开(公告)号：EP2287644B1

公开(公告)日：2014-04-09

申请号：EP10007097.8

申请日：2010-07-09

申请人： Mitsubishi Electric Corporation

发明人： Sato, Yukio ,  Yabe, Mitoru ,  Yoshihara, Toru ,  Nakagawa, Yasuyuki ,  Kurokawa, Hiroshi

IPC分类号： G02B6/00 ,  G02B6/42 ,  G02B7/02 ,  H01S5/022 ,  H01S5/40

CPC分类号： G02B6/4201 ,  G02B6/4256 ,  G02B6/4296 ,  G02B7/02 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/4012 ,  Y10T83/0453

公开(公告)号：EP2675024A2

公开(公告)日：2013-12-18

申请号：EP13170387.8

申请日：2013-06-04

申请人： Palo Alto Research Center Incorporated

发明人： Northrup, John E. ,  Wunderer, Thomas ,  Johnson, Noble M.

IPC分类号： H01S5/04 ,  H01S5/024 ,  H01S5/14 ,  H01S5/183 ,  H01S5/327 ,  H01S5/343

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/0222 ,  H01S5/02461 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/1838 ,  H01S5/18383 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3222 ,  H01S5/327 ,  H01S5/34333

摘要： A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λ lase , in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

摘要翻译： 垂直外腔表面发射激光器（VECSEL）结构包括异质结构和第一和第二反射器。 异质结构包括具有一个或多个量子阱结构的有源区，其被配置为响应于电子束的泵浦而以波长发射辐射。 可以掺杂一个或多个异质结构层。 有源区域设置在第一反射器和第二反射器之间并且通过外部空腔与第一反射器间隔开。 电子束源被配置为产生朝向有源区域的电子束。 至少一个电触点电耦合到异质结构，并且被配置为提供异质结构和地之间的电流路径。

公开(公告)号：EP2072990A3

公开(公告)日：2010-12-01

申请号：EP08171311.7

申请日：2008-12-11

申请人： Daylight Solutions, Inc.

发明人： Weida, Miles J. ,  Day, Timothy ,  Takeuchi, Eric

IPC分类号： G01M3/38 ,  G01M3/20 ,  G02B5/18 ,  H01S5/14

CPC分类号： G01M3/38 ,  G01M3/202 ,  G01N21/3504 ,  G01N2021/3513 ,  H01S3/105 ,  H01S5/0222 ,  H01S5/024 ,  H01S5/02415 ,  H01S5/0612 ,  H01S5/141

摘要： An imaging system (10) for imaging an emitting gas (12) includes an imager (16) and a laser source (20). The imager (16) captures an image (18) of light in the mid-infrared (MIR) range. The laser source (20) includes a semiconductor laser (334) that directly emits an output beam (26) that is in the MIR range. The output beam (26) may be adapted to backscatter near and/or be absorbed by the emitting gas (12). Thus, when an emitting gas (12) is present, the gas (12) may absorb and attenuate the backscattered light. As a result thereof, a shadow or contrast (18A) corresponding to the emitting gas (12) may be visible in the image (18) that is captured by the imager (16).

公开(公告)号：EP1760849A1

公开(公告)日：2007-03-07

申请号：EP05746009.9

申请日：2005-06-02

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： HASEGAWA, Y., c/o MATSUSHITA ELECT. INDUS. CO. LTD ,  YOKOGAWA, T., c/o MATSUSHITA ELECT. INDUS. CO. LTD ,  YAJIMA, H., c/o MATSUSHITA ELECT. INDUS. CO. LTD

IPC分类号： H01S5/022

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3,4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3,4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3,4 so as to cover the semiconductor laser chip 1. Between the stem 3,4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700°C and no more than 850°C.

摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆3,4中的通孔中，用于向半导体激光芯片供电; 以及盖5，其具有透光激光并固定到杆3,4以覆盖半导体激光芯片1的光学窗口6.在杆3,4和端子电极7之间，该装置包括绝缘玻璃8 ，当加热至不低于700℃且不高于850℃的温度时，其不释放氟化硅气体。

公开(公告)号：EP1372230B1

公开(公告)日：2006-12-13

申请号：EP03005629.5

申请日：2003-03-12

申请人： Agilent Technologies, Inc.

发明人： Baney, Douglas M.

IPC分类号： H01S5/14 ,  H01S5/022

CPC分类号： H01S5/141 ,  H01S5/0222 ,  H01S5/0683

公开(公告)号：EP1517166A3

公开(公告)日：2005-07-06

申请号：EP04255516.9

申请日：2004-09-13

申请人： Rohm and Haas Electronic Materials, L.L.C.

发明人： Sherrer, David W. ,  Rasnake, Larry J. ,  Fisher, John J.

IPC分类号： G02B6/42 ,  H01L33/00

CPC分类号： G02B6/4248 ,  G01B11/16 ,  G01B11/26 ,  G02B6/3692 ,  G02B6/4201 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/421 ,  G02B6/4214 ,  G02B6/423 ,  G02B6/4239 ,  G02B6/4243 ,  G02B6/4244 ,  G02B6/4257 ,  G02B6/4271 ,  G02B6/4292 ,  H01L23/481 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/022 ,  H01S5/02208 ,  H01S5/02216 ,  H01S5/0222 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02415 ,  H01S5/02469 ,  H01S5/0683 ,  H01L2924/00012 ,  H01L2924/00

摘要： Provided are optoelectronic device packages. The packages include a base substrate having an optoelectronic device mounting region on a surface of the base substrate and a lid mounting region. An optoelectronic device is mounted on the optoelectronic device mounting region. A lid is mounted on the lid mounting region to form an enclosed volume between the base substrate and the lid. The optoelectronic device is in the enclosed volume. The lid has an optically transmissive region suitable for transmitting light of a given wavelength along an optical path to or from the optoelectronic device, wherein at least a portion of the lid mounting region is disposed along the optical path below the surface of the base substrate to a depth below the optical path. Also provided are wafer or grid level optoelectronic device packages, wafer- or grid-level optoelectronic device package lid and their methods of formation, and connectorized optoelectronic devices.

摘要翻译： 提供的是光电子器件封装。 封装包括基础衬底和盖子安装区域，该基础衬底具有在基础衬底的表面上的光电子器件安装区域。 光电子器件安装在光电子器件安装区域上。 盖子安装在盖子安装区域上以在基底基板和盖子之间形成封闭的体积。 光电子器件处于封闭的体积内。 所述盖子具有光学透射区域，所述光学透射区域适合于沿着到所述光电子器件或从所述光电子器件出发的光路传输给定波长的光，其中所述盖子安装区域的至少一部分沿着所述光学路径设置在所述基底基板表面下方， 光路下方的深度。 还提供了晶圆或栅格级光电子器件封装，晶圆或栅格级光电子器件封装盖及其形成方法，以及连接器化光电子器件。