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1475 条记录 (耗时 0.02 秒)

    HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
    41.
    发明公开
    HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD 审中-公开
    HOCHREINES 1-FLUOROBUTAN UNDPLASMAÄTZVERFAHREN

    公开(公告)号：EP3012241A1

    公开(公告)日：2016-04-27

    申请号：EP14813057.8

    申请日：2014-06-16

    申请人： Zeon Corporation

    发明人： SUGIMOTO, Tatsuya

    IPC分类号： C07C19/08 ,  C07C17/383 ,  C07C17/389 ,  H01L21/3065

    CPC分类号： H01L21/31116 ,  C07C17/383 ,  C07C17/389 ,  C07C19/08 ,  C09K13/00

    摘要： The present invention provides: 1-fluorobutane having a purity of 99.9% by volume or more and a total butene content of 1,000 ppm by volume or less; use of the 1-fluorobutane as a dry etching gas; and a plasma etching method using the 1-fluorobutane as an etching gas. According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided.

    摘要翻译： 本发明提供：纯度为99.9体积％以上，总丁烯含量为1000体积％以下的1-氟丁烷; 使用1-氟丁烷作为干蚀刻气体; 以及使用1-氟丁烷作为蚀刻气体的等离子体蚀刻方法。 根据本发明，适用于半导体的等离子体反应气体的高纯度1-氟丁烷，使用高纯度1-氟代丁烷作为干蚀刻气体，以及使用高纯度1 - 氟丁烷作为蚀刻气体。

    HIGH-PURITY 2-FLUOROBUTANE
    44.
    发明公开
    HIGH-PURITY 2-FLUOROBUTANE 审中-公开
    高纯度2-氟丁烷

    公开(公告)号：EP2966053A1

    公开(公告)日：2016-01-13

    申请号：EP14759957.5

    申请日：2014-03-06

    申请人： Zeon Corporation

    发明人： SUGIMOTO, Tatsuya

    IPC分类号： C07C19/08 ,  H01L21/3065 ,  C07C17/38 ,  C07C17/383 ,  C07C17/389

    CPC分类号： H01L21/31116 ,  C07C19/08 ,  C09K13/00 ,  C09K13/08 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32137

    摘要： The present invention is a high-purity 2-fluorobutane having a purity of 99.9 % by volume or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.

    摘要翻译： 本发明是纯度为99.9体积％以上且丁烯含量为1000体积ppm以下的高纯度2-氟代丁烷，以及使用高纯度2-氟代丁烷作为干式蚀刻气体的方法 。 根据本发明，提供适合作为半导体用等离子体反应气体的高纯度2-氟丁烷。

    METHOD FOR PRODUCING FLUORINE-CONTAINING ALKANE
    46.
    发明公开
    METHOD FOR PRODUCING FLUORINE-CONTAINING ALKANE 审中-公开
    用于生产的烷含氟

    公开(公告)号：EP2554531A4

    公开(公告)日：2015-11-18

    申请号：EP11762398

    申请日：2011-02-18

    申请人： DAIKIN IND LTD

    发明人： SHIOTANI YUKO ,  HANABUSA KAKERU ,  CHAKI TAKEHIRO ,  TAKAHASHI KAZUHIRO

    IPC分类号： C07C17/23 ,  C07C17/354 ,  C07C19/08

    CPC分类号： C07C17/23 ,  C07C17/354 ,  C07C19/08

    摘要： The present invention provides a method for producing a fluorine-containing alkane, which comprises reacting at least one fluorine-containing compound selected from the group consisting of chlorine-containing fluoroalkanes and fluorine-containing alkenes with hydrogen gas in the presence of catalysts, wherein two or more catalysts having different catalytic activities are used, and the fluorine-containing compound and hydrogen gas, which are starting materials, are sequentially brought into contact with the catalysts in the order of the catalyst having a lower catalytic activity followed by the catalyst having a higher catalytic activity. According to the present invention, in the method for producing a fluorine-containing alkane by using chlorine-containing fluoroalkane or fluorine-containing alkene as a starting material, and subjection it to a reduction reaction or a hydrogen addition reaction, the objective fluorine-containing alkane can be produced with high productivity.