摘要:
The invention is directed at a radiation detector which includes a grid electrode located within the detector to assist in the charge collection process. The grid electrode is preferably embedded within a semiconductor layer between two electrode layers, one of the electrode layers being a charge collecting electrode and the other being a common electrode.
摘要:
A photoconductive layer (2) for a radiation image taking panel (10) is formed by selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 1000 molar ppm of a chalcogenide element other than Se or selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 100 molar ppm of a V group element.
摘要:
A photoconductive layer (2) for a radiation image taking panel (10) is formed by selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 1000 molar ppm of a chalcogenide element other than Se or selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 100 molar ppm of a V group element.
摘要:
The present invention relates to a thin film solar cell and a method of manufacturing such cells. In particular the invention relates to the use of a composite back contact (314) in Cu(In,Ga)Se2 (CIGS) based thin film solar cells with thin absorber layers. The composite back contact (314) is provided between the substrate (105) and the absorber (115) and comprises: a back reflector layer (311) that enhance the reflectance at the absorber/composite back contact interface; and at least a contact layer that contact layer (310, 313) that ensures suitable electrical properties of the back contact with respect to the absorber; and/or a conductance layer (312) that ensures low sheet resistance for the in-plane current flow.
摘要:
A radiation detection sensor (10) includes a charge storage capacitor (14), a radiation sensitive layer (50) over the charge storage capacitor, and a dielectric layer (52) over the radiation sensitive layer. The dielectric layer has an adjusted resistivity ς resulting in a time constant τ = ςλε0 between 0.050 and 20 second, wherein λ is the dielectric constant of the dielectric layer, and ε0 is the permittivity of free space. The radiation sensitive layer is a photoconductor, and the dielectric layer is, preferably, a linear segmented polyurethane.