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1740 条记录 (耗时 0.027 秒)

    LED APPARATUS WITH HEAT TRANSFER AND SEAL
    51.
    发明授权
    LED APPARATUS WITH HEAT TRANSFER AND SEAL 有权
    具有传热和密封的LED装置

    公开(公告)号：EP2946141B1

    公开(公告)日：2018-04-11

    申请号：EP13865046.0

    申请日：2013-12-20

    申请人： Cree, Inc.

    发明人： GOELZ, David P. ,  RALEIGH, Craig ,  MILETICH, Don ,  WILCOX, Kurt S.

    IPC分类号： F21V19/00 ,  F21V29/00 ,  F21W131/103 ,  F21V31/00

    CPC分类号： F21V29/70 ,  F21V19/0055 ,  F21V29/2212 ,  F21V31/005 ,  F21W2131/103

    摘要： LED lighting apparatus including (a) a circuit board which has a plurality of light sources spaced thereon, (b) a heat sink to which the circuit board is thermally coupled, and (c) a securement structure which includes a rigid peripheral structure applying force along a peripheral area of the circuit board toward the heat sink to increase the thermal coupling therebetween to facilitate heat transfer from the light sources during operation. The lighting apparatus may also include an optical member with a plurality of lens portions over corresponding light sources and a peripheral region, the securement structure engaging the peripheral region which sandwiches a gasket against the heat sink. The apparatus may use manipulation involving surface convexity, such as bowing, thereby allowing the securement structure to further facilitate surface-to-surface thermal coupling between the circuit board and the heat sink.

    Silicon carbide horizontal channel buffered gate semiconductor devices
    55.
    发明授权
    Silicon carbide horizontal channel buffered gate semiconductor devices 有权
    碳化硅水平沟道缓冲栅极半导体器件

    公开(公告)号：EP2264769B1

    公开(公告)日：2018-02-28

    申请号：EP10182679.0

    申请日：1999-06-08

    申请人： Cree, Inc.

    发明人： Singh, Ranbir

    IPC分类号： H01L29/24 ,  H01L29/808 ,  H01L21/04

    CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/8083

    摘要： Silicon carbide channel semiconductor devices are provided which eliminate the insulator of the gate by utilizing a semiconductor gate layer and buried base regions to create a "pinched off" gate region when no bias is applied to the gate. In particular embodiments of the present invention, the semiconductor devices include a silicon carbide drift layer of a first conductivity type, the silicon carbide drift layer having a first face and having a channel region therein. A buried base region of a second conductivity type semiconductor material is provided in the silicon carbide drift layer so as to define the channel region. A gate layer of a second conductivity type semiconductor material is formed on the first face of the silicon carbide drift layer adjacent the channel region of the silicon carbide drift layer. A gate contact may also be formed on the gate layer. Both transistors and thyristors may be provided.

    EDGE RING TERMINATION FOR SILICON CARBIDE DEVICES
    57.
    发明授权
    EDGE RING TERMINATION FOR SILICON CARBIDE DEVICES 有权
    碳化硅器件的边缘环端接

    公开(公告)号：EP1584110B1

    公开(公告)日：2018-02-21

    申请号：EP04700653.1

    申请日：2004-01-07

    申请人： Cree, Inc.

    发明人： RYU, Sei-Hyung ,  AGARWAL, Anant, K.

    IPC分类号： H01L29/06

    CPC分类号： H01L29/1608 ,  H01L29/0619

    摘要： Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.

    DAYLIGHTING FOR DIFFERENT GROUPS OF LIGHTING FIXTURES
    58.
    发明公开
    DAYLIGHTING FOR DIFFERENT GROUPS OF LIGHTING FIXTURES 审中-公开
    为不同组的照明灯具提供日光照明

    公开(公告)号：EP3281495A1

    公开(公告)日：2018-02-14

    申请号：EP16716353.4

    申请日：2016-03-28

    申请人： Cree, Inc.

    发明人： POPE, Daniel J. ,  KARPICHEV, Boris

    IPC分类号： H05B33/08 ,  H05B37/02

    摘要： Assume that the two groups of lighting fixtures are located in the same general area, employ daylighting, and provide light that can be sensed by each other. A first group will determine an actual lighting contribution provided by the second group and remove the actual lighting contribution provided by the second group when making daylighting decisions. As such, when the dimming level of the second group is changed, the first group will effectively ignore changes in the dimming level of the second group when making daylighting decisions, and vice versa. A group of lighting fixtures may include one or more lighting fixtures.

    OPTICAL ELEMENT FOR A LIGHT SOURCE AND LIGHTING SYSTEM USING SAME
    59.
    发明授权
    OPTICAL ELEMENT FOR A LIGHT SOURCE AND LIGHTING SYSTEM USING SAME 有权
    用于光源的光学元件和使用该光学元件的照明系统

    公开(公告)号：EP2569575B1

    公开(公告)日：2018-01-17

    申请号：EP11720678.9

    申请日：2011-05-09

    申请人： Cree, Inc.

    发明人： PICKARD, Paul, Kenneth

    IPC分类号： G02B19/00 ,  F21V7/00 ,  F21K9/23 ,  F21Y115/10 ,  F21K9/68 ,  F21V5/04

    CPC分类号： F21V5/04 ,  F21K9/00 ,  F21K9/23 ,  F21K9/68 ,  F21V7/0091 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0061 ,  G02B19/0066

    摘要： An optical element for a light source and a lighting system using the optical element are disclosed. In example embodiments, the optical element includes an entry surface and an exit surface opposite the entry surface. The entry surface includes at least three subsurfaces, wherein each subsurface is disposed to receive light rays leaving light source. Each of the three subsurfaces is geometrically shaped and positioned to receive light rays entering the optical element through that subsurface in order to direct the light passing through the optical element. In some embodiments the optical element includes a concentrator lens disposed in the exit surface. The optical element can also include a mixing treatment. A lighting system can include multiple optical elements, each paired with a light source such as an LED or LED package.

    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES AND METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    60.
    发明公开
    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES AND METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 审中-公开
    具有电流降低结构的发光器件和形成具有电流降低结构的发光器件的方法

    公开(公告)号：EP3264475A1

    公开(公告)日：2018-01-03

    申请号：EP17180805.8

    申请日：2008-02-19

    申请人： Cree, Inc.

    发明人： EMERSON, David Todd ,  HABERERN, Kevin ,  BERGMANN, Michael John ,  SLATER, David ,  DONOFRIO, Matthew ,  EDMOND, John

    IPC分类号： H01L33/00

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层以及在n型半导体层和p型半导体层之间的有源区。 诸如导线接合焊盘之类的不透明特征位于p型半导体层上或位于与p型半导体层相对的n型半导体层上，并且减小的导电性区域位于p型半导体层中 或n型半导体层并且与不透明特征对齐。 减小的导电率区域可以从p型半导体层的与n型半导体层相对的表面朝向有源区和/或从与p型半导体层相对的n型半导体层的表面朝向有源区 地区。