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    HIGH-COHERENCE SEMICONDUCTOR LIGHT SOURCES
    2.
    发明公开
    HIGH-COHERENCE SEMICONDUCTOR LIGHT SOURCES 审中-公开
    HOCHKOHÄRENTEHALBLEITERLICHTQUELLEN

    公开(公告)号：EP3017514A1

    公开(公告)日：2016-05-11

    申请号：EP14820551.1

    申请日：2014-06-30

    申请人： California Institute of Technology

    发明人： SANTIS, Christos T. ,  STEGER, Scott T. ,  YARIV, Amnon

    IPC分类号： H01S3/08 ,  G02B6/00

    CPC分类号： H01S5/12 ,  H01S5/021 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02415 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1203 ,  H01S5/2063 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3031 ,  H01S5/34306 ,  H01S2301/02 ,  H01S2301/163

    摘要： A laser resonator includes an active material, which amplifies light associated with an optical gain of the resonator, and passive materials disposed in proximity with the active material. The resonator oscillates over one or more optical modes, each of which corresponds to a particular spatial energy distribution and resonant frequency. Based on a characteristic of the passive materials, for the particular spatial energy distribution corresponding to at least one of the optical modes, a preponderant portion of optical energy is distributed apart from the active material. The passive materials may include a low loss material, which stores the preponderant optical energy portion distributed apart from the active material, and a buffer material disposed between the low loss material and the active material, which controls a ratio of the optical energy stored in the low loss material to a portion of the optical energy in the active material.

    摘要翻译： 激光谐振器包括放大与谐振器的光学增益相关联的光的活性材料和与活性材料邻近设置的无源材料。 谐振器在一个或多个光学模式上振荡，每个光学模式对应于特定的空间能量分布和谐振频率。 基于被动材料的特性，对于对应于至少一种光学模式的特定空间能量分布，光能的主要部分与活性材料分开分布。 被动材料可以包括低损耗材料，其存储与活性材料分开的优势光能部分，以及设置在低损耗材料和活性材料之间的缓冲材料，其控制存储在所述活性材料中的光能的比率 低损耗材料到活性材料中光能的一部分。

    MULTI - SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS
    5.
    发明公开
    MULTI - SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS 有权
    几部分组成量子级联激光器与p隔离区

    公开(公告)号：EP2686922A1

    公开(公告)日：2014-01-22

    申请号：EP12715753.5

    申请日：2012-03-08

    申请人： Corning Incorporated

    发明人： CANEAU, Catherine G ,  XIE, Feng ,  ZAH, Chung-En

    IPC分类号： H01S5/0625 ,  H01S5/16 ,  H01S5/34 ,  H01S5/223

    CPC分类号： H01S5/06256 ,  B82Y20/00 ,  H01S5/1017 ,  H01S5/168 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3402

    摘要： A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser.

    SEMICONDUCTOR LASER ELEMENT
    7.
    发明授权
    SEMICONDUCTOR LASER ELEMENT 有权
    半导体激光元件

    公开(公告)号：EP1406360B1

    公开(公告)日：2010-11-03

    申请号：EP02733264.2

    申请日：2002-05-31

    申请人： Nichia Corporation

    发明人： SUGIMOTO, Yasunobu, ,  OCHIAI, Masanao, ,  YONEDA, Akinori,

    IPC分类号： H01S5/10

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1082 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/18

    摘要： A semiconductor laser element which can provide a good FFP free from ripple and close to a Gaussian distribution, and which is provided with a laminate structure that is formed by sequentially laminating a first conductive type semiconductor layer, an active layer, and a second conductive type (different from the first conductive type) semiconductor layer and that has a waveguide area for guiding light in one direction and a laser-resonating resonator surfaces at the opposite ends thereof, wherein the laminate structure has at one end thereof a non-resonator surface separate from the resonator surfaces and formed so as to include an active layer sectional surface, and the active layer sectional surface of the non-resonator surface is covered with a light shielding layer.

    摘要翻译： 本发明提供一种半导体激光元件，该半导体激光元件能够提供没有波纹并且接近高斯分布的良好的FFP，并且设置有层叠结构，该层叠结构通过依次层叠第一导电型半导体层，有源层和第二导电型层 （不同于第一导电类型）半导体层，并且具有用于沿一个方向引导光的波导区域和在其相对端处的激光谐振谐振器表面，其中该层叠结构在其一端具有非谐振器表面分离 从谐振器表面形成并且形成为包括有源层截面，并且非谐振器表面的有源层截面表面被遮光层覆盖。

    NITRIDE SEMICONDUCTOR LASER DEVICE
    9.
    发明授权
    NITRIDE SEMICONDUCTOR LASER DEVICE 有权
    氮化物半导体激光装置

    公开(公告)号：EP1168539B1

    公开(公告)日：2009-12-16

    申请号：EP00906695.2

    申请日：2000-03-03

    申请人： Nichia Corporation

    发明人： KOZAKI, Tokuya Nichia Corporation ,  SANO, Masahiko Nichia Corporation ,  NAKAMURA, Shuji Nichia Corporation ,  NAGAHAMA, Shinichi Nichia Corporation

    IPC分类号： H01S5/22

    CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

    摘要： A nitride semiconductor laser element enhanced in transverse-mode stability and service life characteristics at a high output so as to be available as a light source for reading from and writing to a large-capacity medium, the element comprising an active layer, a p-side clad layer and a p-side contact layer, all laminated in that order, wherein a stripe-like waveguide area is formed by etching from the p-side contact layer side, which area has a width of 1 to 3 νm and a depth extending from below a position where the film thickness of the p-side clad layer is 0.1 νm to above a luminous layer. Specially, a nitride semiconductor laser element improved in an aspect ratio in a far-field pattern, wherein a p-side optical guide layer has a stripe-like projection, a p-type nitride semiconductor layer overlies the projection, and the p-side optical guide layer's projection has a film thickness of up to 1 νm, the p-side optical guide layer being characterized by being larger in film thickness than an n-side optical guide layer.

    摘要翻译： 一种氮化物半导体激光器元件在横向模式稳定性和使用寿命特性方面以高输出增强，从而可用作读取和写入大容量介质的光源，所述元件包括有源层， 所有的p侧接触层和p侧接触层按顺序层叠在一起，其中从p侧接触层侧通过蚀刻形成条状波导区域，该区域具有1至3νm的宽度和深度 从p侧覆层的膜厚为0.1μm的位置的下方延伸到发光层的上方。 特别地，在远场图案中纵横比改善的氮化物半导体激光元件，其中，p侧光导层具有条状突起，p型氮化物半导体层覆盖突起，并且p侧 光导层的凸起具有高达1νm的膜厚度，该p侧光导层的特征在于其膜厚比n侧光导层大。