Vacuum deposition processes employing a continuous pnictide delivery system, particularly sputtering
    51.
    发明公开
    Vacuum deposition processes employing a continuous pnictide delivery system, particularly sputtering 失效
    使用连续pnictide供给装置,特别是用于雾化真空蒸镀法。

    公开(公告)号:EP0153526A2

    公开(公告)日:1985-09-04

    申请号:EP84304414.0

    申请日:1984-06-28

    CPC classification number: C23C14/34

    Abstract: A pnictide film deposition apparatus characterised in that it comprises:

    (A) a reservoir for containing heated pnictide;
    (B) means for passing an inert gas therethrough;
    (C) a vacuum film deposition chamber; and
    (D) means for supplying the said inert gas carrying the said pnictide as a vapour species after passing through the said pnictide to the said deposition chamber is disclosed.

    A process for the vacuum deposition of pnictide film characterised in that it comprises passing an inert gas through heated pnictide and supplying the product gas to a vacuum chamber is also disclosed.
    Films of pnictide, polypnictide and other pnictide compounds may be deposited for semiconductor, thin film transistors and other applications including insulation and passivation, particularly on III-V semiconductors. The local order of the deposited films may be controlled by varying the amount of energy delivered to the surface of the substrate, which is a function of its temperature, the RF power used and the amount of excess Pnictide 4 supplied.
    Referring to the accompanying illustrative drawing, the present apparatus may comprise reservoir 70, inert gas supply 48, chamber 44 and means for pnictide vapour supply to chamber 76.
    The present invention represents an advance over the )rior art.

    Abstract translation: 甲Pnictides膜沉积设备DASS它包括:(a)用于容纳加热Pnictides的贮存器; (b)用于通过惰性气体存在的通过; (C)的真空成膜室; 和(D)用于通过所述Pnictides所述传递到沉积室游离缺失盘之后供应携带说Pnictides作为蒸气物种的所述惰性气体。 一种用于Pnictides电影的真空沉积DASS它包括惰性气体穿过加热Pnictides与供应的产品气体到真空腔室工艺是如此游离缺失盘。 Pnictides,polypnictide等Pnictides化合物的膜可以被沉积用于半导体,薄膜晶体管和其他应用中,包括绝缘和钝化作用,特别是在III-V半导体。 沉积膜的局部顺序可以通过改变能量输送到基板的表面上的量,所有这些是其温度的函数,所使用的RF功率和过量Pnictide4的量来供给进行控制。 参照附图说明的附图中,本设备可以蒸气供给包括储器70,惰性气体供应48,室44和用于向Pnictides室76本发明darstellt前进超过现有技术。

    Synergistic herbicidal compositions
    52.
    发明公开
    Synergistic herbicidal compositions 失效
    协调主义者Zusammensetzungen。

    公开(公告)号:EP0149099A2

    公开(公告)日:1985-07-24

    申请号:EP84114737.4

    申请日:1984-12-04

    Abstract: Synergistic herbicidal activity is displayed by a compos- tion comprising the following two components: (a) an herbicidally effective amount of a thiolcarbamate of the formula
    in which X is hydrogen, chlorine or bromine; and R 1 and R 2 are independently selected from the group consisting of C 1 -C 6 alkyl and C 5 -C 7 cycloalkyl, and (b) an herbicidally effective amount of a dimethyl urea compound of the formula

    Abstract translation: 协同作用的除草活性由包含以下两种组分的组合物显示:(a)除草有效量的式(CHEM)的硫代氨基甲酸酯,其中X是氢,氯或溴; 和R 1和R 2独立地选自C 1 -C 6烷基和C 5 -C 7环烷基,和(b)除草有效量的式CHEM d的二甲基脲化合物

    Process for producing multiple types of microcapsules
    53.
    发明公开
    Process for producing multiple types of microcapsules 失效
    Verfahren zum Herstellen von unterschiedlichen Typen von Mikrokapseln。

    公开(公告)号:EP0148769A1

    公开(公告)日:1985-07-17

    申请号:EP85300096.6

    申请日:1985-01-07

    CPC classification number: B01J13/16 A01N25/28

    Abstract: A process of encapsulating water-immiscible material within discrete capsules of polyurea without addition of a second reactant, whereby hydrolysis of an isocyanate mo- nomertoform an amine takes place, which in turn reacts with another isocyanate monomer to form polyurea, which comprises the steps of

    (a) providing at room temperature, a dispersion of

    (i) a plurality of water-immiscible phases, each phase comprising the water-immiscible material to be encapsulated and at least one organic polyisocyanate in
    (ii) an aqueous phase comprising a solution of water, a surfactant and a protective colloid; and

    (b) heating and maintaining said dispersion in a temperature range of about 40° C to about 90° C, whereupon said water-immisicible material is encapsulated within discrete polyurea capsuler enclosures directly usable without further separation or purification.

    Abstract translation: 将不溶于水的材料包封在聚脲的离散胶囊内而不加入第二反应物的方法,由此发生异氰酸酯单体水解以形成胺,该反应又与另一种异氰酸酯单体反应形成聚脲,其包括以下步骤: (a)在室温下提供(i)多个水不混溶相的分散体,每个相包含待包封的与水不混溶的材料和至少一种有机多异氰酸酯,所述水性相包含: 水,表面活性剂和保护胶体; 和(b)在约40℃至约90℃的温度范围内加热和保持所述分散体,于是所述水不渗透材料被包封在不经进一步分离或纯化的直接可用的离散聚脲包囊内。

    Flame and dripping ember retardant flexible polyurethane foams
    55.
    发明公开
    Flame and dripping ember retardant flexible polyurethane foams 失效
    火焰和滴落阻燃软质聚氨酯泡沫

    公开(公告)号:EP0111378A3

    公开(公告)日:1985-05-08

    申请号:EP83201772

    申请日:1983-12-13

    Inventor: Fesman, Gerald

    CPC classification number: C08J9/0061 C08J2375/06 C08J2461/00

    Abstract: Polyurethane foams prepared from the reaction of polyester polyol with organic isocyanate have improved flame retardance and dripping ember retardance by incorporation of an additive comprising (1) halogenated flame retardant, and (2) water or alcohol soluble ureaformaldehyde resin.

    Abstract translation: 由聚酯多元醇与有机异氰酸酯反应制备的聚氨酯泡沫通过掺入含有(1)卤化阻燃剂和(2)水或醇溶性脲醛树脂的添加剂而具有改进的阻燃性和滴落阻燃性。

    Flame retardant mixture for polyurethane materials
    56.
    发明公开
    Flame retardant mixture for polyurethane materials 失效
    FlammschutzmischungfürPolyurethanmaterialien。

    公开(公告)号:EP0138204A1

    公开(公告)日:1985-04-24

    申请号:EP84112247.6

    申请日:1984-10-11

    CPC classification number: C08K5/5333 C08K5/521 C08K5/5353 C08L75/04

    Abstract: The present invention relates to a flame retardant mixture of a dialkylalkanolaminoalkylphosphonate and a poly(oxyor- ganophosphate/phosphonate) flame retardant which finds utility, for example, as a flame retardant in polymers containing urethane linkages. It confers food flame retardancy on the polymer without any substantial reduction in its heat distortion temperature.

    Abstract translation: 本发明涉及二烷基链烷醇胺基膦酸二烷基酯和聚(氧基有机磷酸酯/膦酸酯)阻燃剂的阻燃混合物,其可用于例如在含有氨基甲酸酯键的聚合物中的阻燃剂。 它赋予聚合物上的食品阻燃性,而其热变形温度没有显着降低。

    Treatment for phosphorus-containing waste material
    58.
    发明公开
    Treatment for phosphorus-containing waste material 失效
    一种用于含磷废物的制备方法。

    公开(公告)号:EP0136688A2

    公开(公告)日:1985-04-10

    申请号:EP84111715.3

    申请日:1984-10-01

    CPC classification number: C01B25/027 Y10S210/906

    Abstract: The invention is directed to a process for recovering elemental phosphorus values from phosphorus-containing waste materials. The process comprises reducing the size of the solid particulate materials of the sludge and forming a uniform homogenous sludge which is filtered through a high-pressure thin-cake filter resulting in a filtrate high in phosphorus values.
    The invention also discloses a pump retrieval means for retrieving the sludge from contaminated disposal areas and a preconditioning dewatering means for thickening and clarifying the sludge prior to comminuting the solids contained therein and filtrating to recover the phosphorus values contained therein.

    Sputtered semiconducting films of catenated phosphorus material
    60.
    发明公开
    Sputtered semiconducting films of catenated phosphorus material 失效
    Gsputterte Halbleiterfilme von verkettetem磷光材料。

    公开(公告)号:EP0132323A2

    公开(公告)日:1985-01-30

    申请号:EP84304409.0

    申请日:1984-06-28

    Abstract: A process for the production of a semiconducting catenated phosphorus film characterised in that it comprises sputtering a thin film thereof onto a substrate is disclosed.
    The present process may be applied to the production of semiconductor devices. Referring to the accompanying illustrative drawing, a sputtered film 22 may be used in a sandwich configuration on a glass substrate 24 with a metallic lock contact 26 and metal dot top contacts 28.
    For example, amorphous and polycrystalline films of KP 15 may be formed by RF diode sputtering targets of KP 15 and excess phosphorus in an argon phase. Substrate temperatures up to 280-300°C provide amorphous films. Higher temperatures provide microcrystalline or polycristalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10 -10 (ohm-cm)- 1 to 10- 2 (ohm-cm) -1 ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals, such as titanium, nickel and aluminium. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sput- . terred thereon thin film polyphosphides and nickel with nickel and titanium top contacts.
    The present invention represents an advance over the prior art.

    Abstract translation: 公开了一种制备半导电性连接磷膜的方法,其特征在于,其包括将其薄膜溅射到基底上。 本方法可以应用于半导体器件的制造。 参考附图,溅射膜22可以以夹层结构用于具有金属锁定触点26和金属点顶触点28的玻璃基板24上。例如,KP15的非晶和多晶膜 可以由在氩相中的KP15的RF二极管溅射靶和过量的磷形成。 基材温度高达280-300℃,提供非晶膜。 较高的温度提供微晶或多晶硅膜。 这些膜具有高电阻,并且可以用作使用III-V半导体的MIS器件中的绝缘体。 使用镍的共溅射使得膜的电导率从大约10 -1(ohm-cm)-1到10 -3(ohm-cm)<1> <1>; 仅将光学间隙减小了0.2eV; 并将活化能从0.8eV降低到0.2eV; 镍含量从5-15%变化。 基板包括玻璃,硅,钽,不锈钢,磷化镓和砷化镓,以及金属如钛,镍和铝金属化的玻璃。 已经在形成有金属化玻璃基板上的器件中观察到双二极管电特性,其上共溅射有薄膜多磷化物和具有镍和钛顶部触点的镍。 本发明代表了现有技术的进步。

Patent Agency Ranking