公开(公告)号：EP1152211A3

公开(公告)日：2002-05-29

申请号：EP01109784.7

申请日：2001-04-20

申请人： Leica Microsystems Jena GmbH

发明人： Engel, Horst, Dr. ,  Mikkelsen, Hakon, Dr. ,  Danner, Lambert ,  Slodowski, Matthias ,  Backhaus, Kuno ,  Wienecke, Joachim, Dr.

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： Die Erfindung bezieht sich auf eine optische Meßanordnung, insbesondere zur Schichtdickenmessung sowie zur Ermittlung optischer Materialeigenschaften wie Brechungsindex, Extinktionsfaktor usw. einer Probe (P), mit einer Beleuchtungseinrichtung (1) zur Abgabe eines Meßlichtstrahls (6), einem Strahlteiler (8) zur Aufteilung des Meßlichtstrahls (6) in einen Objektlichtstrahl (10) und einen Referenzlichtstrahl (9), einem Meßobjektiv zum Ausrichten des Objektlichtstrahls (10) auf einen Meßort (M) an der Oberfläche der Probe (P) und zum Erfassen des an dem Meßort (M) reflektierten Lichtes des Objektlichtstrahls (10), sowie einer Auswerteeinrichtung (11), in welche der von der Probe (P) reflektierte Objektlichtstrahl (10) und der Referenzlichtstrahl (9) eingekoppelt sind, zum Erhalt von Informationen über die Probe (P), insbesondere über an dieser vorhandene Schichtdicken. Zur Einkopplung des Objektlichtstrahls (10) und des Referenzlichtstrahls (9) in die Auswerteeinrichtung (11) sind Lichtleiteinrichtungen (23, 25) mit einer Vielzahl von Lichtleitfasern vorgesehen. Hierdurch wird eine kompakte, flexibel aufstellbare und störungsunempfindliche optische Meßanordnung geschaffen, die sich besonders zur automatischen Überwachung kontinuierlicher Produktionsvorgänge, insbesondere bei der Halbleiterchip-Herstellung, eignet.

摘要翻译： 本发明涉及一种光学测量装置，特别是用于层厚度测量和用于确定具有用于发射测量光的照明装置（1）的试样（P）的光学材料性质如折射率，消光因子等 光束（6），用于将测量光束（6）分成样本光束（10）和参考光束（9）的分束器（8），用于将样本光束（10）引导到的测量对象 在所述检体（P）的表面上的测量位置（M）和用于获取从所述测量位置（M）反射的光的测量位置（M）;以及分析装置（11），所述参考光束（9）和所述检体光束 （P）反射的（10）被耦合以获得关于样本（P）的信息，特别是关于存在于其上的层厚度。 提供具有多个导光纤维的导光装置（23,25），用于将试样光束（10）和参考光束（9）耦合到分析装置（11）中。 其结果是创建一个紧凑的光学测量装置，其可以灵活地设置并且对干扰不敏感，这特别适用于连续生产过程的自动监测，特别是在半导体芯片制造中。

公开(公告)号：EP1163488A1

公开(公告)日：2001-12-19

申请号：EP00921435.4

申请日：2000-03-22

申请人： Sensys Instruments Corporation

发明人： STANKE, Fred, E. ,  WEBER-GRABAU, Michael ,  RUTH, Douglas, E. ,  TONG, Edric, H. ,  CAHILL, James, M., Jr. ,  CARLISLE, Clinton ,  BURKE, Elliot ,  PHAM, Hung

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01N21/88 ,  H01L21/304 ,  C23C16/52

CPC分类号： B24B49/12 ,  G01B11/0625 ,  G01B11/30 ,  G01N21/211 ,  G01N21/9501 ,  H01L21/67 ,  H01L22/12

摘要： This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.

公开(公告)号：EP1131598A1

公开(公告)日：2001-09-12

申请号：EP99960435.8

申请日：1999-11-18

申请人： Honeywell Inc.

发明人： BELOTSERKOVSKY, Edward

IPC分类号： G01B11/06 ,  G01G17/02

CPC分类号： G01G17/02 ,  G01B11/0625

摘要： A sensor and a method for determining the coating weight of a coating material containing silicone on a substrate is described. The determined coating weight is insensitive to changes in the amount of substrate material underlying the coating. Signals from the sensor may be used in the control of a coating mechanism to provide a coating having a uniform weight.

公开(公告)号：EP1110054A1

公开(公告)日：2001-06-27

申请号：EP99939596.5

申请日：1999-08-26

申请人： Tevet Process Control Technologies Ltd.

发明人： DU-NOUR, Ofer

IPC分类号： G01B9/02

CPC分类号： G03F7/70483 ,  G01B11/0625

摘要： A method and apparatus for measuring lateral variations in the thickness or in the refractive index of a transparent film such as photoresist on a substrate such as a semiconductor wafer. The film is illuminated by a beam of light including multiple wavelengths. A signal representing a variation of the intensity of the light reflected from the film at the various wavelengths is decomposed into principal frequencies, and the lateral variations in the thickness or in the refractive index of the film is inferred from these principal frequencies. Lateral thickness variation measurements are used in real time for controlling the application or removal of the film.

公开(公告)号：EP0898148A3

公开(公告)日：2000-04-26

申请号：EP98114954.5

申请日：1998-08-08

申请人： DaimlerChrysler AG

发明人： Griesinger, Manfred, Dr.

IPC分类号： G01B11/06 ,  B60T8/00 ,  G01N21/35 ,  G01N21/55

CPC分类号： B60T8/172 ,  B60G2400/82 ,  B60G2401/00 ,  B60T2210/12 ,  B60T2210/13 ,  G01B11/0625

摘要： Die Erfindung bezieht sich auf ein Verfahren zur Bestimmung des Zustands einer Fahrbahnoberfläche, bei dem auf die Fahrbahnoberfläche Licht eingestrahlt wird, das zwei Lichtanteile aus Wellenlängenbereichen ohne bzw. mit signifikanter Absorption durch Wasser/Eis beinhaltet, und bei dem das rückgestreute Licht erfaßt und spektral ausgewertet wird. Erfindungsgemäß enthält der erste Lichtanteil Licht mehrerer unterschiedlicher Wellenlängen und die spektrale Auswertung beinhaltet die Ermittlung einer Näherungs-Referenzkurve für den Spektralverlauf des rückgestreuten Lichtes bei trockener Fahrbahn anhand der Spektraldaten des Rückstreulichtanteils im Wellenlängenbereich ohne signifikante Absorption und die Ermittlung der Differenz zwischen den Spektraldaten des Rückstreulichtanteils im anderen Wellenlängenbereich und den entsprechenden Daten der Näherungs-Referenzkurve für wenigstens eine Wellenlänge. Verwendung z.B. zur laufenden qualitativen und quantitativen Bestimmung des Zustands der von einem Straßenfahrzeugs befahrenen Fahrbahnoberfläche.

公开(公告)号：EP0611329B1

公开(公告)日：2000-01-26

申请号：EP92924253.5

申请日：1992-11-02

申请人： Honeywell-Measurex Corporation

发明人： ANDERSON, Leonard, M. ,  HOWARTH, John, J.

IPC分类号： B05C11/10 ,  G01J3/36 ,  D21H23/34 ,  D21H23/78 ,  G01B11/06

CPC分类号： G01N21/86 ,  B05C11/1005 ,  B05C11/1015 ,  G01B11/0625 ,  G05D5/03

公开(公告)号：EP0754931A3

公开(公告)日：1997-11-05

申请号：EP96111447.7

申请日：1996-07-16

申请人： Dainippon Screen Mfg. Co., Ltd.

发明人： Kokubo, Masahiko ,  Horie, Masahiro

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： A film thickness measuring apparatus measures the thickness of a thin film which is formed on a substrate with an excellent reproducibility regardless of inclination of a surface of a sample. Since an illumination system (20) includes a glass rod (GL) which corrects wavelength dependencies of luminance distributions of light sources (HL, DL), even when an eclipse in reflected light due to inclination of a sample (SP) decreases the energy of the reflected light, a spectral distribution of the reflected light entering a spectroscopic unit (40) is maintained with almost no change. A control unit (50) performs data conversion of multiplying an actual spectral reflectance by a ratio of an average of the actual spectral reflectance which is determined based on an output from the spectroscopic unit (40) to an average of a calibrated spectral reflectance and thereafter calculates a deviation between the two spectral reflectances. As a result, the film thickness is accurately measured while preventing an influence of inclination of the sample (SP).

公开(公告)号：EP0647827A3

公开(公告)日：1997-01-29

申请号：EP94307400.5

申请日：1994-10-10

申请人： Hughes Aircraft Company

发明人： Ledger, Anthony M.

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： Systems (20) for making thickness measurements in a thin film structure (11) using an incoherently or coherently coupled structured surface (16, 21). A system (20, 20a) is used to measure the thickness of a thin film layer (14) of a thin film structure (11) is which polished and structured surfaces are coherently coupled together. Visible light used to measure the thickness of thin bonded wafers that have a ground upper surface (16), or infrared light is used to measure the thickness of thick silicon wafers (10) where one surface is ground, and the other is polished. Other systems (20a, 20b) use a structured surface (21) that is incoherently coupled to a thin film structure (11) in order to illuminate the thin film structure (11) at many angles. The systems (20, 20a, 20b) produce interference fringes that are detected (25a) and recorded (28), and multi-spectral pattern matching is used in a computer (29) to compute film thickness based on scattering characteristics included in a library (30) of stored interference patterns.

公开(公告)号：EP0631106A2

公开(公告)日：1994-12-28

申请号：EP94109573.9

申请日：1994-06-21

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

发明人： Nishizawa, Seiji ,  Takashashi, Tokuji ,  Hattori, Ryo, c/o Mitsubishi Denki K.K., Hikari

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： The film interference waveform of a wavenumber dispersion (wavelength dispersion) spectrum of the reflected light is obtained from numerical calculation using an optical characteristic matrix by a theoretical interference spectrum calculating means with respective film thickness measured values of a semiconductor device obtained from waveform analysis of the spatial interference waveform as initial values, these calculated values are subjected to waveform fitting with actually measured values by recalculating means, and the theoretical interference spectrum is recalculated while changing the approximate values of the film thicknesses intentionally, whereby high precision respective film thicknesses are obtained. The film thicknesses of respective layers of a thin multi-layer film in submicron can be non-destructively measured exactly and stably with no contact.

摘要翻译： 反射光的波数色散（波长色散）光谱的胶片干涉波形通过使用光学特性矩阵的理论干涉光谱计算装置的数值计算得到，各自的膜厚测量值由从 空间干涉波形作为初始值，这些计算值通过重新计算装置与实际测量值进行波形拟合，并且在有意改变膜厚度的近似值的同时重新计算理论干涉光谱，从而获得高精度的各自的膜厚度。 亚微米薄的多层膜的各层的膜厚度可以非接触地非破坏性地测量并且稳定地进行。

公开(公告)号：EP0601580A1

公开(公告)日：1994-06-15

申请号：EP93119876.6

申请日：1993-12-09

申请人： Hughes Aircraft Company

发明人： Ledger, Anthony M.

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： A measurement instrument which detects the thickness of the outer layer of a wafer 24 , includes a filtered white light source forming an aperture image. The white light source includes a halogen lamp 10 , a condensing lens 12 , a circular aperture 14 , a collimator lens 16 , a narrow band filter wheel 18 , and a second collimator lens 20 . A monochromatic beam generated by this filtered white light source illuminates the entire surface of the wafer 24 with collimated light that has passed through a third collimator lens 22 . The light reflected off the wafer 24 returns through the third collimator lens 22 and forms an aperture image upon an optical device which redirects this image to a charge coupled device (CCD) camera 30 . The image is converted to a map of measured reflectance data by a digitizing circuit 34 and a computer 36 . This map of measured reflectance data is then self-normalized and compared to reference reflectance data to generate a map of the outer layer thickness profile of the wafer 24 .

摘要翻译： 检测晶片24的外层的厚度的测量仪器包括形成孔径图像的经过滤的白色光源。 白光源包括卤素灯10，聚光透镜12，圆形孔14，准直透镜16，窄带滤光轮18和第二准直透镜20.由该滤光白光源产生的单色光束照亮 具有已经通过第三准直透镜22的准直光的晶片24的整个表面。从晶片24反射的光通过第三准直透镜22返回，并在光学装置上形成孔径图像，该光学装置将该图像重定向到电荷 耦合设备（CCD）照相机30.图像通过数字化电路34和计算机36转换成测量反射率数据的映射。然后测量的反射率数据的该图被自标准化，并与参考反射率数据进行比较以产生映射 的晶片24的外层厚度分布