公开(公告)号：EP0166342A3

公开(公告)日：1986-12-30

申请号：EP85107442

申请日：1985-06-19

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： TIWARI, SANDIP

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L21/338 ,  H01L29/04 ,  H01L29/812 ,  H01L29/80

CPC分类号： H01L29/045 ,  H01L21/2258 ,  H01L21/3245 ,  H01L29/812

公开(公告)号：EP0166342A2

公开(公告)日：1986-01-02

申请号：EP85107442.7

申请日：1985-06-19

申请人： International Business Machines Corporation

发明人： Tiwari, Sandip

IPC分类号： H01L21/324 ,  H01L21/225 ,  H01L29/80 ,  H01L29/04

CPC分类号： H01L29/045 ,  H01L21/2258 ,  H01L21/3245 ,  H01L29/812

摘要： A method of producing a FET in a gallium arsenide substrate comprises forming a gate (2) on a [100] surface of the gallium arsenide substrate in the [011] orientation, ion implanting active impurities to form FET source (5) and drain (6) regions which are self-aligned with respect to the gate (2), and annealing the structure subsequently to the ion implanting to cause the active impurities to diffuse laterally and thereby form a channel region beneath the gate (2).

摘要翻译： 在砷化镓衬底中制造FET的方法包括在[011]取向的砷化镓衬底的[100]表面上形成栅极（2），离子注入有源杂质以形成FET源（5）和漏极 6）相对于栅极（2）自对准的区域，并且在离子注入之后退火结构以使活性杂质横向扩散，从而在栅极（2）下方形成沟道区域。

公开(公告)号：EP0063221B1

公开(公告)日：1985-07-03

申请号：EP82101421.4

申请日：1982-02-25

申请人： International Business Machines Corporation

发明人： Fowler, Alan Bicksler ,  Rosenberg, Robert ,  Rupprecht, Hans Stethan

IPC分类号： H01L21/225 ,  H01L29/78

CPC分类号： H01L29/78 ,  H01L21/0337 ,  H01L21/2258 ,  H01L29/812

公开(公告)号：EP0063221A2

公开(公告)日：1982-10-27

申请号：EP82101421.4

申请日：1982-02-25

申请人： International Business Machines Corporation

发明人： Fowler, Alan Bicksler ,  Rosenberg, Robert ,  Rupprecht, Hans Stethan

IPC分类号： H01L21/225 ,  H01L29/78

CPC分类号： H01L29/78 ,  H01L21/0337 ,  H01L21/2258 ,  H01L29/812

摘要： A method for the fabrication of gallium arsenide (GaAs) metal-semiconductor field effect transistor (MESFET) is described. The method requires the step of providing a semi-insulating GaAs substrate (10) having thereon a layer of n doped GaAs (24) and another layer of n+ doped Ga 1-x Al x As (not shown), the latter being used as a diffusion source for n dopants in selectively doping the n GaAs layer underneath to form source and drain regions (22. 24). The fabrication method further includes the step of employing highly directional reactive ion etching on silicon nitride to build insulating side walls 18, 20 to effect the self-alignment of the gate of the MESFET with respect to its source and drain.