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公开(公告)号：EP0668372A1
公开(公告)日：1995-08-23
申请号：EP95300516.2
申请日：1995-01-27
IPC分类号： C23C16/26
CPC分类号： C23C16/278 , C23C16/271
摘要： A method is provided for making semi-transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used as a heat sink in microelectronic applications. A mixture of hydrogen and a carbon-fluorine containing material such as carbon tetrafluoride is conveyed into a heated filament reaction zone adjacent to an appropriate substrate, such as molybdenum to produce non-adherent semi-transparent diamond film.
摘要翻译： 提供了一种用于制造厚度大于50微米的半透明多晶金刚石膜的方法，其可用作微电子应用中的散热器。 将氢和含碳氟的材料如四氟化碳的混合物输送到与诸如钼的合适基底相邻的加热的细丝反应区中，以产生非粘附的半透明金刚石膜。
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公开(公告)号：EP0668371A1
公开(公告)日：1995-08-23
申请号：EP95300515.4
申请日：1995-01-27
IPC分类号： C23C16/26
CPC分类号： C23C16/278 , C23C16/271
摘要： A method is provided for making semi-transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used as a heat sink in microelectronic applications. A mixture of hydrogen and a carbon-chlorine containing material such as carbon tetrachloride is conveyed into a heated filament reaction zone adjacent to an appropriate substrate, such as molybdenum to produce non-adherent semi-transparent diamond film.
摘要翻译： 提供一种制造厚度大于50微米的半透明多晶金刚石薄膜的方法，该薄膜可用作微电子应用中的散热器。 将氢气和含碳氯的材料如四氯化碳的混合物输送到邻近合适基材如钼的加热丝反应区中以产生非粘着性半透明金刚石薄膜。
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公开(公告)号：EP0642852A1
公开(公告)日：1995-03-15
申请号：EP94306287.7
申请日：1994-08-25
IPC分类号： B21C3/02
CPC分类号： B21C3/025
摘要： A CVD diamond wire drawing die (11) has smaller diamond grains adjacent an initial diamond growth surface (13) with larger diamond grains adjacent an opposing surface (15) with an opening (12) having a wire bearing portion (17) of substantially circular cross-section determinative of the diameter of the wire positioned more closely adjacent to the opposing surface (13) in a region of larger grains than to the initial growth surface (15).
摘要翻译： CVD金刚石拉丝模具具有较小的金刚石晶粒，该金刚石晶粒与初始金刚石生长表面相邻，较大的金刚石晶粒与相对的表面相邻，开口具有基本圆形横截面的线轴承部分，所述导线轴承部分确定的线的直径位于更靠近 在比起初始生长表面的颗粒大的区域中的相对表面。
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公开(公告)号：EP0320657B1
公开(公告)日：1993-09-29
申请号：EP88119329.6
申请日：1988-11-21
CPC分类号： C23C16/27 , C23C16/0272 , C30B25/00 , C30B29/04
摘要： Boron is used as a diamond crystal nucleation and growth enhancer on a substrate in a CVD process of nucleating and growing diamond crystals on a substrate exposed to an activated hydrogen-hydrocarbon gas mixture.
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公开(公告)号：EP0272418B1
公开(公告)日：1992-09-16
申请号：EP87116337.4
申请日：1987-11-05
CPC分类号： C23C16/517 , C23C16/27 , C30B25/10 , C30B29/04
摘要： A mixture of hydrogen and methane gases is subjected to combined thermal heating and microwave radiation to form a gas plasma which is caused to condense on a substrate as diamond form of carbon.
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66.发明公开Symmetric CVD diamond articles and method of their preparation 失效Symmetrische Diamant-Gegenständeund Verfahren zu ihrer Herstellung。
公开(公告)号：EP0492160A1
公开(公告)日：1992-07-01
申请号：EP91120144.0
申请日：1991-11-26
IPC分类号： C23C16/26
摘要： The present invention is directed to a method for the chemical vapor depositon (CVD) of a layer of diamond on a substrate held at elevated CVD diamond-forming temperature wherein a hydrocarbon gaseous mixtures is passed over a hot elongate filament for at least partially decomposing said mixture to form said CVD diamond layer on said substrate. The present invention specifically is directed to forming a substantially uniformly thick CVD diamond layer on the substrate which is stationary. Such method comprises disposing said substrate stationarily at a distance, C, from a hot elongate filament. The substrate has a maximum radius, R, which is defined as the maximum distance from the center of the substrate to an outermost surface to be coated by the layer of CVD diamond. The substrate also is disposed parallel about its axis to the filament. The layer of CVD diamond becomes more uniform in thickness as the ratio, R/C, decreases. An advantageous substrate is a wire which can be coated with a layer of CVD diamond for making a nozzle, wire drawing, die, or other annular article when the wire is separated from the resulting diamond annulus. For a wire substrate and two hot filaments, ratios of r/c of less than about 0.05 provide substantially uniform CVD diamond layers on the wire substrate. For a wire substrate and a single filament, ratios of r/c of less than about 0.02 also provide substantially uniform CVD diamond layers.
摘要翻译： 本发明涉及一种用于在保持在升高的CVD金刚石形成温度下的基底上的金刚石层的化学气相沉积（CVD）的方法，其中烃气态混合物通过热的细长丝，以至少部分地分解所述 混合物以在所述衬底上形成所述CVD金刚石层。 本发明具体涉及在静止的基底上形成基本均匀的厚度的CVD金刚石层。 这种方法包括将所述衬底与热的细长细丝静置在距离C的距离处。 衬底具有最大半径R，其被定义为从衬底的中心到要由CVD金刚石层涂覆的最外表面的最大距离。 衬底也围绕其轴线平行于灯丝。 随着比率R / C的降低，CVD金刚石层的厚度变得更均匀。 有利的基材是当金属丝与所得金刚石环分离时，可以用CVD金刚石涂层来制造喷嘴，拉丝，模头或其它环形制品。 对于线基材和两根热丝，r / c比小于约0.05，在金属丝基材上提供基本均匀的CVD金刚石层。 对于线基材和单丝，r / c小于约0.02的比例还提供基本均匀的CVD金刚石层。
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公开(公告)号：EP0417512A1
公开(公告)日：1991-03-20
申请号：EP90116058.0
申请日：1990-08-22
IPC分类号： C23C16/26
CPC分类号： C23C16/271 , C23C16/01 , C23C16/27 , C23C16/279 , Y10S428/938
摘要： A method is provided for making substantially transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used in glazing applications and as a heat sink in microelectric applications. A mixture of hydrogen and methane is conveyed into a heated filament reacting zone which is adjacent to an appropriate substrate, such as a molybdenum substrate to produce non-adherent polycrystalline substantially transparent diamond film.
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68.发明公开Apparatus for synthetic diamond deposition including spring tensioned filaments 失效一种用于包含弹簧偏压的弹簧丝人造金刚石的沉积。
公开(公告)号：EP0411424A1
公开(公告)日：1991-02-06
申请号：EP90114050.9
申请日：1990-07-23
发明人： Anthony, Thomas Richard , Engler, Richard Allen , Ettinger, Robert Helmut , Fleischer, James Fulton , DeVries, Robert Charles
CPC分类号： C23C16/44 , C23C16/271
摘要： Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are linear and spring-tensioned to compensate for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two temperature controlling means, usually heat sinks, to maintain substrate temperature in the range of 900-1000°C, for optimum rate of diamond deposition.
摘要翻译： 金刚石是通过化学气相沉积由所述基板之间长丝的多个装置沉积在两个平行基底。 基板和长丝是在垂直构型，长丝是线性和弹簧张紧以补偿由灯丝渗碳造成的热膨胀和膨胀。 该装置包括至少一个，优选两个温度控制装置底栖，通常是散热片，以维持基材的温度在900-1000℃的范围内，对于金刚石沉积的最佳速率。
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公开(公告)号：EP0272418A3
公开(公告)日：1989-06-07
申请号：EP87116337.4
申请日：1987-11-05
CPC分类号： C23C16/517 , C23C16/27 , C30B25/10 , C30B29/04
摘要： A mixture of hydrogen and methane gases is subjected to combined thermal heating and microwave radiation to form a gas plasma which is caused to condense on a substrate as diamond form of carbon.
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