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    APPARATUS AND METHOD FOR NUCLEATION AND DEPOSITION OF DIAMOND USING HOT-FILAMENT DC PLASMA
    8.
    发明授权
    APPARATUS AND METHOD FOR NUCLEATION AND DEPOSITION OF DIAMOND USING HOT-FILAMENT DC PLASMA 失效
    DEVICE AND METHOD FOR枝形成和金刚石的分离用电热丝直流等离子体

    公开(公告)号：EP0994973B1

    公开(公告)日：2003-06-04

    申请号：EP98931851.4

    申请日：1998-07-07

    申请人： CVD Diamond Corporation

    发明人： CVD Diamond Corporation

    IPC分类号： C23C16/26 ,  H01J37/32

    CPC分类号： C23C16/277 ,  C23C16/02 ,  C23C16/27 ,  C23C16/271 ,  C30B25/02 ,  C30B29/04 ,  H01J37/32018 ,  H01J37/32027 ,  Y10T428/30

    摘要： A method and apparatus for nucleation and growth of diamond by hot-filament DC plasma deposition. The apparatus uses a resistively heated filament array for dissociating hydrogen in the reactant gas. For two sided diamond growth, configurations of substrate-hot filament-grid-hot filament-substrate or substrate-hot filament-hot filament-substrate configuration are used. For the latter configuration, two independent arrays of filaments serve as both hot filament and grid, and AC or DC plasma is maintained between the filament arrays. For this and the other electrode configurations, the grid electrode is positively biased with respect to the hot filaments to maintain a plasma. The plasma potential gradient across the grid and the hot-filament draws ions from the plasma towards the filaments. To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array. During nucleation, the filament adjacent to the substrate holder is biased positively relative to the substrate so that more ions are accelerated towards the substrate, which in turn enhances the flow of growth precursors towards the substrate resulting in a high diamond nucleation density on the substrate without the need for scratching or diamond-seeding pretreatment. This nucleation method simplifies the growth process and provides a convenient and economical means for heteroepitaxial growth of diamond nuclei on single crystal substrates like Si (100).

    METHOD FOR PRODUCING DIAMOND FILMS USING A VAPOUR-PHASE SYNTHESIS SYSTEM
    9.
    发明公开
    METHOD FOR PRODUCING DIAMOND FILMS USING A VAPOUR-PHASE SYNTHESIS SYSTEM 失效
    用于生产DIAMANDFILMEN使用气相合成系统

    公开(公告)号：EP0959148A4

    公开(公告)日：2001-09-12

    申请号：EP97933934

    申请日：1997-07-15

    申请人： OOO VYSOKIE T

    发明人： RAKHIMOV ALEXANDR TURSUNOVICH ,  SUETIN NIKOLAI VLADISLAVOVICH ,  SAMORODOV VLADIMIR ANATOLEVICH

    IPC分类号： C30B29/04 ,  C01B31/06 ,  C23C16/02 ,  C23C16/27 ,  C23C16/56 ,  C30B25/10 ,  H01J1/30 ,  H01J9/02 ,  C30B25/02 ,  H01J1/304

    CPC分类号： H01J9/025 ,  C23C16/0236 ,  C23C16/0272 ,  C23C16/271 ,  C23C16/56 ,  C30B25/105 ,  C30B29/04

    摘要： This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.