摘要:
An antenna switching arrangement with a quadrature arrangement of transmission lines through which a desired signal path may be configured via switches selectively grounding junctions of the switching arrangement. The desired path routing a signal from an input port to one or both of first and second output ports to generate a signal with vertical linear polarization, horizontal linear polarization or circular polarization. The selected polarization may be changed as desired and/or multiple antenna switching arrangements applied to enable simultaneous signals with different polarizations.
摘要:
L'invention concerne un circulateur à au moins trois ports (p 1 , p 2 , p 3 ), un port d'entrée (p 1 ) pour recevoir un signal radiofréquence à transmettre vers un port (p 2 ) destiné à être connecté à une antenne d'émission/réception (A) appelé port d'antenne, un port de sortie (p 3 ) apte à être connecté à un dispositif récepteur ou une charge, caractérisé en ce qu 'il comprend : - un premier et un second micro-commutateurs (MEMS1, MEMS2) à actionnement électrostatique de type condensateur formés sur un même substrat et comportant chacun deux armatures dont la première est une membrane flexible et la seconde comporte au moins une zone d'une ligne signal, les deux armatures étant séparées par une épaisseur de vide ou de gaz ; - les ports d'antenne et de sortie étant disposés sur une ligne signal principale, le port d'entrée étant situé sur une ligne signal secondaire ; - le premier micro-commutateur étant disposé de manière à relier la ligne signal principale et la ligne signal secondaire par auto-actionnement de la membrane sous l'effet d'une puissance de signal d'entrée ; - le second micro-commutateur ayant une membrane permettant de relier la ligne principale à des plans de masse par auto-actionnement de la membrane sous l'effet d'une puissance de signal d'entrée ; - les micro-commutateurs étant séparés d'une distance de l'ordre du quart de la longueur d'onde correspondant à la fréquence du signal.
摘要:
The invention relates to resonator structures of radio communication apparatus. According to the invention, at least one resonator structure and at least one switch structure are manufactured on the same substrate during the same process. This is especially advantageous when using bridge type BAW resonators and micromechanical switches, since the same process steps which are used for creating the bridge structures, can be used to create the micromechanical switch structure. Integration of switch structures and resonators on the same substrate allows the manufacture of very compact filter and resonator structures needed for multi-system mobile communication means. According to another aspect of the invention a special property of BAW resonators is utilized, namely that BAW resonators can be integrated on substrates which are commonly used for active circuitry, such as silicon (Si) and gallium arsenide (GaAs) surfaces. According to this aspect of the invention, the switches are realized with transistor structures using, for example, MESFET transistors.
摘要:
The invention relates to an electric switching device (1), in particular a high-frequency switching device, comprising an elongate electrical switching element (4) comprising a contact end (6) which is arranged between two counter contact elements (7a, 7b) which are separated by a transversal distance and which can be displaced in a transversal manner in relation to the longitudinal direction thereof, against one or the other counter contact elements (7a, 7b), by two adjusting elements which are arranged on both sides adjacent to the switching element (4). In order to prevent or at least reduce the friction processes during switching, the switching element (4) is made at least partially of magnetic material, and the adjusting elements are formed by magnets (13a, 13b), and for a switching process, the efficiency of the magnet (13a, 13b) which is arranged in relation to the opposite side of the counter contact element (7a, 7b) which is to be contacted, can be limited or cancelled.
摘要:
The invention relates to an electrical switching device (1), especially a high-frequency switching device, comprising an elongate electrical switching element (4), a contact end (6) of which is disposed between two opposite contact elements (7a, 7a) that are transversally spaced apart from each other. Said switching element (4) can be selectively moved perpendicular to the longitudinal direction thereof towards one or the other opposite contact element (7a, 7b) by means of two adjusting elements that are located on both sides next to the switching element (4). In order to eliminate or at least reduce frictional processes and the risk of the electrical contact being damaged by abrasion, the switching element (4) is made at least in part of magnetic material while the adjusting elements are formed by two magnet assemblies (12a, 12b), the magnetic force of one magnet assembly (12a) or the other magnet assembly (12b) being selectively reducible or increasable.
摘要:
A micro magnetic latching device. The device comprises a substrate having a moveable element supported thereon. The moveable element (cantilever) has a long axis and a magnetic material. The device also has first and second magnets that produce a first magnetic field, which induces a magnetization in the magnetic material. The magnetization is characterized by a magnetization vector pointing in a direction along the long axis of the moveable element, wherein the first magnetic field is approximately perpendicular to a major central portion of long axis. The device also has a coil that produces a second magnetic field to switch the moveable element between two stable states, wherein only temporary application of the second magnetic field is required to change direction of the magnetization vector thereby causing the movable element to switch between the two stable states.
摘要:
The invention relates to a micromechanical HF-switching element in which a stand-alone moving element (5) is placed on a substrate (1) above a metallic surface (2) so that it is drawn toward the metallic surface (2) by applying an electrical voltage between the metallic surface (2) and the moving element (5). A dielectric layer (3) is placed upon said metallic surface (2). The invention also relates to a method for producing micromechanical HF-switching elements of the aforementioned type, during which the dielectric layer (3) is deposited upon the metallic surface (2). The method is characterized in that a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is deposited upon the metallic surface (2). The inventive method and the HF switching element produced therewith result in a distinctly reduced charging of the dielectric and an increased long-time stability of the switching element.