MOVABLE TENSEGRITY STRUCTURE
    73.
    发明公开
    MOVABLE TENSEGRITY STRUCTURE 有权
    BEWEGLICHE TENSEGRITY-STRUKTUR

    公开(公告)号:EP2243994A1

    公开(公告)日:2010-10-27

    申请号:EP09710457.4

    申请日:2009-01-13

    发明人: NIHEI, Kazuhiro

    IPC分类号: F16S3/06 E04B1/344 B25J18/06

    摘要: Provided is a movable tensegrity structure capable of performing bending operation, torsional operation, contracting operation, etc, by itself, The movable tensegrity structures (1, 1*, 10) is constituted by combining a plurality of rigid members (2, 11) and tension members (3, 1 2) for connecting between the end points (E, F) of the rigid members (2, 11), respectively. The tensegrity structure is characterized in that all or a part of the plurality of tension members (3, 12) is formed of a contraction-controllable member,

    摘要翻译: 本发明提供一种能够进行弯曲操作,扭转操作,收缩操作等的可动张力结构。可移动张紧结构(1,1 *,10)通过组合多个刚性构件(2,11)和 用于分别在刚性构件(2,11)的端点(E,F)之间连接的张力构件(3,1,2)。 张力结构的特征在于,多个张力构件(3,12)的全部或一部分由收缩可控构件形成,

    THIN FILM FORMING METHOD AND THIN FILM STACK
    74.
    发明公开
    THIN FILM FORMING METHOD AND THIN FILM STACK 审中-公开
    VERFAHREN ZUR FORMUNG EINESDÜNNFILMSUNDDÜNNFILMSTAPEL

    公开(公告)号:EP2243859A1

    公开(公告)日:2010-10-27

    申请号:EP09713077.7

    申请日:2009-01-21

    发明人: OISHI, Kiyoshi

    摘要: Provided are a thin film forming method capable of stably forming a homogeneous film at high productivity and a thin film stack obtained thereby. In the thin film forming method, a first discharge space for forming a functional film on a base material under an atmospheric pressure or a pressure near the atmospheric pressure and a second discharge space for post-treating the base material on which the film is formed in the first discharge space are provided. The first discharge space is composed of a pair of roll electrodes and used in a film forming step of forming the functional film on the base material by supplying a mixed gas (1) containing a discharge gas and a thin film forming gas to the first discharge space from a mixed gas supply means to form a high-frequency electric field between the pair of roll electrodes. The second discharge space is located at the outer periphery of one of the roll electrodes and used in a post-treatment step of performing post-treatment by introducing the base material on which the functional film is formed thereinto and introducing a mixed gas (2) containing the discharge gas and a post-treatment gas between a counter electrode and the roll electrode to form a high-frequency electric field between the counter electrode and the roll electrode.

    摘要翻译: 提供了能够以高生产率稳定地形成均匀膜的薄膜形成方法和由此获得的薄膜叠层。 在薄膜形成方法中,在大气压或接近大气压的压力下在基材上形成功能膜的第一放电空间和用于后处理形成有膜的基材的第二放电空间 提供第一放电空间。 第一放电空间由一对辊电极组成,用于通过向第一放电供给包含放电气体和薄膜形成气体的混合气体(1)而在基材上形成功能膜的成膜步骤 来自混合气体供给装置的空间构成在一对辊电极之间形成高频电场。 第二放电空间位于一个辊电极的外周,用于通过将形成有功能膜的基材引入其中并引入混合气体(2)的后处理步骤, 在对电极和辊电极之间含有放电气体和后处理气体,以在对电极和辊电极之间形成高频电场。

    PIEZOELECTRIC PORCELAIN COMPOSITION
    75.
    发明公开
    PIEZOELECTRIC PORCELAIN COMPOSITION 有权
    PIEZOELEKTRISCHE KERAMIKZUSAMMENSETZUNG

    公开(公告)号:EP2218701A1

    公开(公告)日:2010-08-18

    申请号:EP08856668.2

    申请日:2008-11-06

    IPC分类号: C04B35/00 H01L41/187

    摘要: A KNbO 3 -NaNbO 3 piezoelectric porcelain composition which exhibits a larger piezoelectric constant than those of conventional ones and does not have any secondary phase transition point in the neighborhood of room temperature (10 to 40°C), that is, a piezoelectric porcelain composition represented by the general formula: (1-y-z-w)(K x Na 1-x )NbO 3 + yLiNbO 3 + zSrTiO 3 + wBiFeO 3 , wherein (K x Na 1-x )NbO 3 represents potassium sodium niobate; LiNbO 3 represents lithium niobate,; SrTiO 3 represents strontium titanate; and BiFeO 3 represents bismuth ferrate; with the proviso that 0.4

    摘要翻译: 一种KNbO 3 -NaNbO 3压电陶瓷组合物,其表现出比常规压电常数更大的压电常数,并且在室温(10至40℃)附近不具有任何第二相转变点,即压电陶瓷组合物 由以下通式表示:(1-yzw)(K x Na 1-x)NbO 3 + yLiNbO 3 + zSrTiO 3 + wBiFeO 3,其中(K x Na 1-x)NbO 3表示铌酸钾钠; LiNbO 3表示铌酸锂; SrTiO 3表示钛酸锶; BiFeO 3表示高铁酸铋; 条件是0.4