摘要:
Provided is a movable tensegrity structure capable of performing bending operation, torsional operation, contracting operation, etc, by itself, The movable tensegrity structures (1, 1*, 10) is constituted by combining a plurality of rigid members (2, 11) and tension members (3, 1 2) for connecting between the end points (E, F) of the rigid members (2, 11), respectively. The tensegrity structure is characterized in that all or a part of the plurality of tension members (3, 12) is formed of a contraction-controllable member,
摘要:
Provided are a thin film forming method capable of stably forming a homogeneous film at high productivity and a thin film stack obtained thereby. In the thin film forming method, a first discharge space for forming a functional film on a base material under an atmospheric pressure or a pressure near the atmospheric pressure and a second discharge space for post-treating the base material on which the film is formed in the first discharge space are provided. The first discharge space is composed of a pair of roll electrodes and used in a film forming step of forming the functional film on the base material by supplying a mixed gas (1) containing a discharge gas and a thin film forming gas to the first discharge space from a mixed gas supply means to form a high-frequency electric field between the pair of roll electrodes. The second discharge space is located at the outer periphery of one of the roll electrodes and used in a post-treatment step of performing post-treatment by introducing the base material on which the functional film is formed thereinto and introducing a mixed gas (2) containing the discharge gas and a post-treatment gas between a counter electrode and the roll electrode to form a high-frequency electric field between the counter electrode and the roll electrode.
摘要:
A KNbO 3 -NaNbO 3 piezoelectric porcelain composition which exhibits a larger piezoelectric constant than those of conventional ones and does not have any secondary phase transition point in the neighborhood of room temperature (10 to 40°C), that is, a piezoelectric porcelain composition represented by the general formula: (1-y-z-w)(K x Na 1-x )NbO 3 + yLiNbO 3 + zSrTiO 3 + wBiFeO 3 , wherein (K x Na 1-x )NbO 3 represents potassium sodium niobate; LiNbO 3 represents lithium niobate,; SrTiO 3 represents strontium titanate; and BiFeO 3 represents bismuth ferrate; with the proviso that 0.4
摘要翻译:一种KNbO 3 -NaNbO 3压电陶瓷组合物,其表现出比常规压电常数更大的压电常数,并且在室温(10至40℃)附近不具有任何第二相转变点,即压电陶瓷组合物 由以下通式表示:(1-yzw)(K x Na 1-x)NbO 3 + yLiNbO 3 + zSrTiO 3 + wBiFeO 3,其中(K x Na 1-x)NbO 3表示铌酸钾钠; LiNbO 3表示铌酸锂; SrTiO 3表示钛酸锶; BiFeO 3表示高铁酸铋; 条件是0.4
摘要:
Provided is an organic electroluminescent element comprising a substrate having thereon an anode, a cathode, and a plurality of organic layers sandwiched between the anode and the cathode, wherein the plurality of organic layers comprise: a light emitting layer containing a phosphorescence emitting compound; and an electron transport layer containing a compound represented by Formula (1),
Formula (1) (Ar1)n1-Y1
wherein n1 is an integer of 1 or more; Y 1 is a substituent when n1 is 1, and Y 1 is a single bond or a linking group of n1 valences when n1 is two or more; Ar1 is a group represented by Formula (A), a plurality of Ar1 may be the same or different with each other when n1 is two or more; and the compound represented by Formula (1) contains at least two condensed aromatic heterocyclic rings each comprising 3 or more rings condensed with each other:
摘要:
An objective is to provide plate making printing exhibiting conductivity and flexibility with respect to a flexible substrate, and to provide a method of forming metal patterns via non-plate making printing, and a metal salt mixture usable for the method. Also disclosed is a method of forming a metal pattern possessing the steps of conducting patterning on a substrate with a metal salt mixture for the metal pattern formation possessing a metal salt and a reducing agent, and having a viscosity of 3 - 50 mPa·s at 25 °C, and forming the metal pattern via heating to a temperature of 80 - 400 °C.