公开(公告)号：EP1879220A3

公开(公告)日：2010-09-22

申请号：EP07112043.0

申请日：2007-07-09

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： Mazure, Carlos ,  Bourdelle, Konstantin ,  Rayssac, Olivier

IPC分类号： H01L21/18

CPC分类号： H01L21/187

摘要： L'invention concerne un procédé de collage hydrophobe direct des faces avant (11, 21) de deux substrats (1, 2), destinés à être utilisés en l'électronique, en optique ou en opto-électronique, dont l'un au moins comprend une couche de matériau semi-conducteur (1, 13, 2, 20, 23) qui s'étend sur sa face avant (11, 21), ou à proximité de celle-ci.
Ce procédé est remarquable en ce qu'il comprend les étapes suivantes consistant à :
soumettre au moins la face avant (11, 21) du substrat comprenant un semi-conducteur ou au moins l'une des faces avant (11,21) des deux substrats si les deux substrats comprennent un semi-conducteur, à un traitement thermique de préparation avant collage, à une température comprise entre 900°C et 1200°C, dans une atmosphère gazeuse comprenant de l'hydrogène et/ou de l'argon, pendant une durée d'au moins 30 secondes,
• coller directement l'une contre l'autre, lesdites faces avant (11, 21) respectives des deux substrats à coller (1, 2).

公开(公告)号：EP2227821A1

公开(公告)日：2010-09-15

申请号：EP08870039.8

申请日：2008-11-18

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： RADOUANE, Khalid

IPC分类号： H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/02057

摘要： The present invention relates to processes of cleaning and preparing hydrophobic surfaces of semiconductor substrates, wherein the said semiconductor substrates are suitable for use as base substrates for epitaxial growth. In the context of cleaning the substrate with an aqueous solution containing hydrofluoric acid (HF), a strong acid with a pKa of less than 3 may be used in combination with the HF and/or rinsing whilst applying megasonic waves may be performed. The processes according to the invention allow hydrophobic surfaces to be prepared showing reduced levels of watermarks.

公开(公告)号：EP2174347A1

公开(公告)日：2010-04-14

申请号：EP08775250.7

申请日：2008-07-21

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： ALLIBERT, Frédéric ,  KERDILES, Sébastien

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/28282 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： The present invention relates to a production process of a semiconductor on insulator type structure comprising a semiconductor layer (11) of a donor substrate (10), an insulator layer (60) and a receiver substrate (20), the process comprising the bonding of the donor substrate (10) on the receiver substrate (20), at least one of the substrates being coated with an insulator layer, characterised in that it comprises the formation at the bonding interface of a so-called trapping interface (30) comprising electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor on insulator type structure comprising a trapping interface.

公开(公告)号：EP2109583A1

公开(公告)日：2009-10-21

申请号：EP08702248.9

申请日：2008-01-10

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： ASPAR, Bernard ,  LAGAHE BLANCHARD, Chrystelle ,  SOUSBIE, Nicolas

IPC分类号： B81C1/00

CPC分类号： B81C1/00952 ,  B81B3/001 ,  B81C2201/115

摘要： The invention relates to a process of forming a rough interface (12) in a semiconductor substrate (2), comprising: the formation, on a surface (4) of said substrate, of a zone of irregularities (8) in or on an oxide or a material (6) that may be oxidized, the formation of roughnesses in or on the semiconductor substrate (2) by thermal oxidation of or through this material or this oxide (6) and a part of the semiconductor substrate.

公开(公告)号：EP1522097B1

公开(公告)日：2009-09-16

申请号：EP03762850.0

申请日：2003-07-09

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  AULNETTE, Cécile ,  OSTERNAUD, Bénédicte

IPC分类号： H01L21/762

CPC分类号： H01L21/76259 ,  H01L21/76254

公开(公告)号：EP2077576A1

公开(公告)日：2009-07-08

申请号：EP08305001.3

申请日：2008-01-04

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： Radouane, Khalid

IPC分类号： H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/02057

摘要： The present invention relates to a process of cleaning of a substrate suitable for use as a base substrate for epitaxial growth, wherein the said process comprises the steps of:
a) cleaning the said substrate with an aqueous solution containing hydrofluoric acid (HF) in addition to a strong acid with a pKa of less than 3;
b) rinsing the said substrate with deionised water; and
c) drying the said substrate.
The present invention further relates to a cleaned substrate as obtained according to the said process and to a substrate having a surface layer obtained by epitaxial growth on such a cleaned substrate.

摘要翻译： 本发明涉及一种清洗适合用作外延生长基底的基底的方法，其中所述方法包括以下步骤：a）另外用含有氢氟酸（HF）的水溶液清洗所述基底 到pKa小于3的强酸; b）用去离子水冲洗所述底物; 和c）干燥所述基材。 本发明还涉及根据所述方法获得的清洁衬底和具有通过在这种清洁衬底上外延生长获得的表面层的衬底。

公开(公告)号：EP1791170B1

公开(公告)日：2009-04-01

申请号：EP07100845.2

申请日：2001-11-26

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： Letertre, Fabrice ,  Ghyselen, Bruno

IPC分类号： H01L21/20 ,  C30B25/18

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0445 ,  H01L21/76254 ,  H01L29/1608

公开(公告)号：EP2002474A2

公开(公告)日：2008-12-17

申请号：EP07731215.5

申请日：2007-03-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  S.O.I.Tec Silicon on Insulator Technologies

发明人： TAUZIN, Aurélie ,  FAURE, Bruce ,  GARNIER, Arnaud

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of fabricating a thin film from a substrate comprises the following steps: (1) implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate; (2) optional intimate contacting of this face of the substrate with a stiffener; and (3) detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

公开(公告)号：EP1537258B9

公开(公告)日：2008-10-29

申请号：EP03763891.3

申请日：2003-07-16

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： GHYSELEN, Bruno ,  LETERTRE, Fabrice

IPC分类号： C30B33/00 ,  H01L21/00

CPC分类号： C30B29/06 ,  C30B29/36 ,  C30B33/00

摘要： The invention relates to a method for fabricating substrates (30), in particular for optics, electronics, or optoelectronics, by transferring a layer (170) of a material suitable for said type of application, and in particular a semiconductor material, onto a support (20). Said method is characterized in that it comprises the following steps : a) forming a flat face (13) termed the "front face" on a raw ingot (10) of material intended to form said layer (170); b) implanting atomic species beneath said front face (13) to a controlled mean implantation depth to create a zone of weakness (16) defining a top layer (17) of said ingot (10 ); c) bonding a support (20) onto said front face (13); d) directly detaching from the ingot (10), at the zone of weakness (16), the portion (170) of said top layer (17) which is bonded to said support (20); and e) re-commencing said cycle of operations from step b) at least once. Said method saves starting material.

公开(公告)号：EP1949430A1

公开(公告)日：2008-07-30

申请号：EP06820227.4

申请日：2006-10-17

申请人： S.O.I.Tec Silicon on Insulator Technologies

发明人： ALLIBERT, Frédéric ,  DEGUET, Chrystel ,  RICHTARCH, Claire

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention concerns a method for treating a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded to the substrate, the method including a treatment for improving the electrical properties of the layer and/or of the interface of the Ge layer with the underlying layer. The invention is characterized in that said treatment is a heat treatment implemented at a temperature ranging between 5000C and 6000C for a maximum of 3 hours. The invention also concerns a method for producing a structure comprising a Ge layer, the method including bonding a donor substrate comprising at least in its upper part a thin Ge layer and a receiver substrate, characterized in that it includes the following steps: (a) bonding the donor substrate to the receiver substrate such that the Ge layer is located in the neighborhood of the bonding interface; (b) eliminating part of the donor substrate not including the Ge layer; (c) treating the structure comprising the receiver substrate and the Ge layer in accordance with the treatment method.