公开(公告)号：EP2002474A2

公开(公告)日：2008-12-17

申请号：EP07731215.5

申请日：2007-03-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  S.O.I.Tec Silicon on Insulator Technologies

发明人： TAUZIN, Aurélie ,  FAURE, Bruce ,  GARNIER, Arnaud

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A method of fabricating a thin film from a substrate comprises the following steps: (1) implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate; (2) optional intimate contacting of this face of the substrate with a stiffener; and (3) detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.

公开(公告)号：EP1678754A1

公开(公告)日：2006-07-12

申请号：EP04805334.2

申请日：2004-10-28

申请人： S.O.I.Tec Silicon on Insulator Technologies ,  COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： NGUYEN, Nguyet-Phuong ,  CAYREFOURCQ, Ian ,  LAGAHE-BLANCHARD, Christelle ,  BOURDELLE, Konstantin ,  TAUZIN, Aurélie ,  FOURNEL, Franck

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： The invention relates to a method for self-supported transfer of a fine layer, wherein: at least one species of ions is implanted in a source-substrate at a given depth in relation to the surface of the source-substrate according to a certain dosage; a stiffener, which is in intimate contact with the source-substrate, is applied; said source-substrate undergoes heat treatment at a given temperature during a given period of time in order to create an embrittled, buried area substantially at said given depth without causing the fine layer to become thermally detached; a controlled energy pulse is applied to the source-substrate in a temporally localized manner in order to cause self-supported detachment of a fine layer which is defined between the surface and the embrittled buried layer in relation to the rest of the source-substrate.

公开(公告)号：EP2283172A1

公开(公告)日：2011-02-16

申请号：EP09742298.4

申请日：2009-04-10

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： TAUZIN, Aurélie ,  MOULET, Jean-Sébastien

IPC分类号： C30B31/04 ,  C30B33/02

CPC分类号： C30B31/04 ,  C30B33/02 ,  H01L21/76254

摘要： Method for transferring a thin layer from a lithium-based starting substrate, comprising: a step of proton exchange between this substrate and a first electrolyte, which is an acid, through a free face of this substrate so as to replace lithium ions of the substrate by protons, in a proportion between 10% and 80%, over a depth e1; a step of reverse proton exchange between this substrate and a second electrolyte, through this free face, so as to replace, over a second depth e2 smaller than the first depth e1, at least practically all the protons with lithium ions, so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step are left, the depth e2 defining a thin layer between said free face and the intermediate layer; a heat treatment step carried out under conditions suitable for embrittling the intermediate layer; and a separating step suitable for causing the thin film to separate from the rest of the substrate at the intermediate layer.

公开(公告)号：EP2102904A2

公开(公告)日：2009-09-23

申请号：EP07872387.1

申请日：2007-12-18

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： TAUZIN, Aurélie ,  DECHAMP, Jérôme ,  MAZEN, Frédéric ,  MADEIRA, Florence

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02032

摘要： The invention relates to a method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate is made of GaN, said method including the following steps: bombarding said free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of said thick surface area and the hydrogen being implanted thereafter, the helium and hydrogen doses each varying between 1.1017 atoms/cm2 and 4.1017 atoms/cm2; submitting the starting substrate to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.

摘要翻译： 该方法包括用氦和氢离子轰击离开的衬底（11）的自由面，其中氦离子在深度处以厚的硝酸镓区域的厚度注入，并且氢离子以另一个的厚区域的厚度注入 深度低于以前的深度。 氦和氢的剂量在1.10功率17和4.10之间，功率为17个原子/厘米2。 将基底施加到热断裂过程以使位于自由面和后面深度之间的厚区域的所有部分分离。

公开(公告)号：EP1817445A1

公开(公告)日：2007-08-15

申请号：EP05857330.4

申请日：2005-11-25

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： TAUZIN, Aurélie ,  LAGAHE-BLANCHARD, Chrystelle

IPC分类号： C30B33/02 ,  C30B31/22 ,  H01L21/762

CPC分类号： C30B33/02 ,  C30B25/04 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664

摘要： The invention concerns a method for producing a growth mask on the surface of an initial crystalline substrate (1) including the following steps: forming a second material layer (2) on one of the sides of the first material initial substrate (1); forming a pattern in the thickness of the second material layer (2) so as to expose zones of said side of the initial substrate, said zones forming growth windows on the initial substrate. Said method is characterized in that the formation of the pattern is obtained by ionic implantation provided in the surface layer of the initial substrate underlying the second material layer, the conditions of implantation being such that they bring about, directly or following heat treatment, on said side of the initial substrate, the occurrence of exfoliated zones (5) of first material causing the localized removal of second material zones covering the exfoliated zones of first material, thereby locally exposing the initial substrate and forming growth windows (6) on the initial substrate. The invention also concerns methods for producing a thin crystalline layer and transferring said thin layer on a receiving substrate.