公开(公告)号：EP1922745A1

公开(公告)日：2008-05-21

申请号：EP06801586.6

申请日：2006-08-16

申请人： The Trustees of Columbia University in the City of New York

发明人： IM, James, S.

IPC分类号： H01L21/20

CPC分类号： H01L27/1296 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/0861 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285

摘要： Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length .and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region.

公开(公告)号：EP1816673A3

公开(公告)日：2007-11-14

申请号：EP07008628.5

申请日：2000-08-29

申请人： The Trustees of Columbia University in the City of New York

发明人： Im, James S. ,  Sposili, Robert S. ,  Crowder, Mark A.

IPC分类号： H01L21/20

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： A method for processing a silicon thin film into a polycrystalline silicon thin film comprising the steps of:
(a) generating a sequence of excimer laser pulses, each having a substantially predetermined size;
(b) masking a laser pulse in the sequence with a mask having one or more slits having a predetermined width to generate one or more first laser beamlets corresponding to the laser pulse, such that each beamlet has a shape defined by a length corresponding to the predetermined laser pulse size and a width corresponding to the slit width;
(c) irradiating a silicon thin film with the one or more first laser beamlets to effect melting of a first portion of the thin film corresponding to the shape of the one or more laser beamlets;
(d) translating at least one of the thin film and the excimer laser pulses relative to each other so that one or more laser beamlets corresponding to a second laser pulse is incident on a second location of the thin film; and
(e) after step (d), irradiating a second portion of the thin film with the one or more second laser beamlets corresponding to the second pulse to effect melting of the second portion at the second film location, wherein the second portion partially overlaps the first portion. Each of the irradiated portions is melted through a thickness of the thin film. A lateral growth is effectuated in each molten portion of the thin film.

摘要翻译： 一种将硅薄膜加工成多晶硅薄膜的方法，包括以下步骤：（a）产生一系列准分子激光脉冲，每个准分子激光脉冲具有基本上预定的尺寸; （b）用具有一个或多个具有预定宽度的狭缝的掩模按顺序掩蔽激光脉冲，以产生对应于激光脉冲的一个或多个第一激光子束，使得每个子射束具有由对应于 预定的激光脉冲尺寸和对应于狭缝宽度的宽度; （c）用所述一个或多个第一激光束照射硅薄膜以实现对应于所述一个或多个激光束的形状的所述薄膜的第一部分的熔化; （d）将所述薄膜和所述准分子激光脉冲中的至少一个相对于彼此平移，使得对应于第二激光脉冲的一个或多个激光子束入射在所述薄膜的第二位置上; （e）在步骤（d）之后，用对应于第二脉冲的一个或多个第二激光子束照射薄膜的第二部分以在第二膜位置处实现第二部分的熔化，其中第二部分部分地重叠 第一部分。 每个照射部分熔化通过薄膜的厚度。 横向生长在薄膜的每个熔融部分中实现。

公开(公告)号：EP1816673A2

公开(公告)日：2007-08-08

申请号：EP07008628.5

申请日：2000-08-29

申请人： The Trustees of Columbia University of the City of New York

发明人： Im, James S. ,  Sposili, Robert S. ,  Crowder, Mark A.

IPC分类号： H01L21/20

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： A method for processing a silicon thin film into a polycrystalline silicon thin film comprising the steps of:
(a) generating a sequence of excimer laser pulses, each having a substantially predetermined size;
(b) masking a laser pulse in the sequence with a mask having one or more slits having a predetermined width to generate one or more first laser beamlets corresponding to the laser pulse, such that each beamlet has a shape defined by a length corresponding to the predetermined laser pulse size and a width corresponding to the slit width;
(c) irradiating a silicon thin film with the one or more first laser beamlets to effect melting of a first portion of the thin film corresponding to the shape of the one or more laser beamlets;
(d) translating at least one of the thin film and the excimer laser pulses relative to each other so that one or more laser beamlets corresponding to a second laser pulse is incident on a second location of the thin film; and
(e) after step (d), irradiating a second portion of the thin film with the one or more second laser beamlets corresponding to the second pulse to effect melting of the second portion at the second film location, wherein the second portion partially overlaps the first portion. Each of the irradiated portions is melted through a thickness of the thin film. A lateral growth is effectuated in each molten portion of the thin film.

摘要翻译： 一种用于处理硅薄膜为多晶硅薄膜，包括以下步骤的方法：（a）产生的脉冲准分子激光的序列，每一个都具有基本上预定的大小; （B）掩蔽与具有一个或多个狭缝的掩模具有预定宽度，以产生一个或多个第一激光子束对应于所述激光脉冲序列中的激光脉冲，检查确实每个子束具有由长度对应于限定的形状 预定的激光脉冲尺寸和宽度对应于狭缝宽度; （C）照射的硅薄膜与所述一个或多个第一子束激光，以实现薄膜对应于所述一个或多个激光子束的形状的第一部分的熔化; （D）平移所述薄膜中的至少一个和相对海誓山盟准分子激光脉冲，以便做一个或多个激光子束对应于第二激光脉冲入射到薄膜的第二位置; 和（e）在步骤（d）照射所述薄膜与所述一个或多个第二激光子束对应于所述第二脉冲在所述第二位置的电影以实现第二部分的熔化的第二部分，worin所述第二部分部分地重叠 所述第一部分。 每个被照射的部分的通过厚度薄膜的熔化。 横向生长是在薄膜的每一熔融部分实现。

公开(公告)号：EP1551059A3

公开(公告)日：2006-10-18

申请号：EP04257956.5

申请日：2004-12-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kwon, Jang-yeon ,  Noguchi, Takashi ,  Park, Young-soo ,  Kim, Do-young

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

公开(公告)号：EP1087429B1

公开(公告)日：2006-09-06

申请号：EP00907924.5

申请日：2000-03-08

申请人： MITSUBISHI DENKI KABUSHIKI KAISHA ,  SEIKO EPSON CORPORATION

发明人： OGAWA, Tetsuya, Mitsubishi Denki Kabushiki Kaisha ,  TOKIOKA, Hidetada, Mitsubishi Denki K.K. ,  SATO, Yukio, Mitsubishi Denki Kabushiki Kaisha ,  INOUE, Mitsuo, Mitsubishi Denki Kabushiki Kaisha ,  SASAGAWA, Tomohiro, Mitsubishi Denki K.K. ,  MIYASAKA, Mitsutoshi, Seiko Epson Corporation

IPC分类号： H01L21/268 ,  H01L21/20

CPC分类号： H01L27/1285 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1296

摘要： A laser beam (102) of 350-800 nm wavelength generated by a pulsed laser (101) is shaped into a line beam (300) of width (W0) and length (L0). The resulting beam (300) is emitted onto a film material (201) of amorphous or polycrystalline silicon on a substrate (203) for a heat treatment.

公开(公告)号：EP1652590A1

公开(公告)日：2006-05-03

申请号：EP05023372.5

申请日：2005-10-26

申请人： SEIKO EPSON CORPORATION

发明人： Sakai, Shinri ,  Hirai, Toshimitsu

IPC分类号： B05D1/26 ,  H01L21/00

CPC分类号： H01L27/1292 ,  G02F1/13439 ,  H01L27/1296 ,  H01L27/3244 ,  H01L51/0005

摘要： A thin film pattern substrate on which a thin film pattern is formed by placing a functional liquid on the substrate, the thin film pattern includes a first domain area into which the functional liquid is infused and a second domain area on which the functional liquid infused into the first domain area flows, wherein the first domain area includes a plurality of linear patterns the width of which is narrower than the width of the first domain area, and the linear patterns forming the second domain area are connected to at least one of the plural linear patterns that constitute the first domain area.

摘要翻译： 一种薄膜图案基板，其上通过将功能液体放置在基板上而形成薄膜图案，薄膜图案包括输入功能液体的第一区域区域和输入功能液体的第二区域区域 第一域区域流动，其中第一域区域包括宽度比第一域区域的宽度窄的多个线性图案，并且形成第二域区域的线性图案被连接到多个 构成第一域的线性模式。

公开(公告)号：EP1551059A2

公开(公告)日：2005-07-06

申请号：EP04257956.5

申请日：2004-12-20

申请人： Samsung Electronics Co., Ltd.

发明人： Kwon, Jang-yeon ,  Noguchi, Takashi ,  Park, Young-soo ,  Kim, Do-young

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/1029 ,  H01L29/6675 ,  H01L29/78663 ,  H01L29/78672

摘要： Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

摘要翻译： 提供了包括被定义为高迁移率区域和低迁移率区域的有源区域和具有半导体器件的薄膜晶体管的半导体器件。 有源区的迁移率可以降低到足以满足半导体器件要求的水平。 有源区的迁移率的降低有助于减少半导体器件之间的迁移率偏差。 结果，可以大大提高采用大规模半导体器件的平板显示器的质量。

公开(公告)号：EP1304186A3

公开(公告)日：2005-06-22

申请号：EP02021768.3

申请日：2002-09-25

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Tanaka, Koichiro ,  Miyairi, Hidekazu ,  Shiga, Aiko ,  Shimomura, Akihisa ,  Isobe, Atsuo

IPC分类号： B23K26/06 ,  B23K26/073 ,  G02B27/09 ,  H01L21/20 ,  H01L21/268 ,  H01L21/84

CPC分类号： H01L21/02675 ,  B23K26/0066 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K2201/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：EP1473778A1

公开(公告)日：2004-11-03

申请号：EP04090017.7

申请日：2004-01-19

申请人： Samsung SDI Co., Ltd.

发明人： Koo, Jae-Bon ,  Park, Ji-Yong ,  Park, San-ll ,  Kim, Hye-dong

IPC分类号： H01L27/15

CPC分类号： H01L27/3262 ,  H01L27/1296 ,  H01L27/3276

摘要： Provided is a flat panel display in which no stripes appear on a screen, thereby improving image quality. The flat panel display has a matrix-type array of sub-pixels, each of which includes a driving thin film transistor, a first electrode driven by the driving thin film transistor, and a second electrode driving a light emission unit together with the first electrode. The driving thin film transistor includes semiconductor channels which are derived from a semiconductor layer. Heterogeneous straight lines are separated from each other on the semiconductor layer. An imaginary line connecting the semiconductor channels of one column is not parallel to the heterogeneous straight lines.

摘要翻译： 提供一种平板显示器，其中屏幕上不出现条纹，从而提高图像质量。 平板显示器具有矩阵型子像素阵列，每个子像素包括驱动薄膜晶体管，由驱动薄膜晶体管驱动的第一电极和与第一电极一起驱动发光单元的第二电极 。 驱动薄膜晶体管包括衍生自半导体层的半导体沟道。 不均匀的直线在半导体层上彼此分离。 连接一列半导体通道的假想线不平行于异质直线。

公开(公告)号：EP1414062A2

公开(公告)日：2004-04-28

申请号：EP03090360.3

申请日：2003-10-21

申请人： Samsung SDI Co., Ltd.

发明人： Lee, Ki-Yong, 542-803

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696

摘要： A method of fabricating a TFT using dual or multiple gates, and a TFT having superior characteristics and uniformity by providing a method of fabricating a TFT using dual or multiple gates by calculating the probability including Nmax, the maximum number of crystal grain boundaries in active channel regions according to the length of the active channels, and adjusting a gap between the active channels capable of synchronizing the number of the crystal grain boundaries in each active channel region of the TFT using the dual or multiple gates in the case where Gs, the size of crystal grains of polycrystalline silicon forming a TFT substrate, θ angle in which "primary" crystal grain boundaries are inclined at a direction perpendicular to an active channel direction of the gates, the width of the active channels and the length of the active channels are determined.

摘要翻译： 计算有源通道区域中最大晶界数的概率。 基于定义硅晶粒尺寸，相对于栅极通道方向的边界倾斜角度和宽度和长度的概率值，能够通过双/多栅极来调节能够同步晶体管的每个沟道区域中的边界的通道之间的间隙 的渠道。