a first active stack of layers comprising an optical cavity, (17) at least one quantum dot located in said cavity; (17) an upper contact provided above said optical cavity; (23) a lower contact provided below said cavity, (11) wherein an abrupt material interface defines the whole lateral boundary of said cavity and said cavity is patterned such that it provides two dimensional lateral confinement of photon modes, said upper an lower contacts (11,23) being arranged such that current can flow vertically across the cavity between the two contacts (11,23).
摘要:
A VCSEL [100] with a near planar top surface on which the top electrode [111] is deposited. A VCSEL [100] according to the present invention includes a top electrode [111], a top mirror [115] having a top surface, a light generation region [120], and a bottom mirror [116] for reflecting light toward the top mirror [115]. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes [112] are etched down from the top surface of the VCSEL [100] to the layer [118] containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region [121] surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.