公开(公告)号：EP2333847B1

公开(公告)日：2018-02-14

申请号：EP09809577.1

申请日：2009-08-27

申请人： Sophia School Corporation

发明人： KISHINO, Katsumi ,  KIKUCHI, Akihiko ,  SEKIGUCHI, Hiroto

IPC分类号： H01L33/18 ,  H01L21/205 ,  H01S5/343 ,  H01L21/02 ,  H01L31/075 ,  H01L33/24 ,  H01L31/0352

CPC分类号： H01L21/0254 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02603 ,  H01L21/02639 ,  H01L27/15 ,  H01L27/153 ,  H01L29/0657 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0676 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/075 ,  H01L33/18 ,  H01L33/24 ,  H01S5/0213 ,  H01S5/1042 ,  H01S5/183 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/423 ,  Y02E10/548

摘要： The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.

公开(公告)号：EP3151348A2

公开(公告)日：2017-04-05

申请号：EP16186465.7

申请日：2016-08-31

申请人： Samsung Electronics Co., Ltd.

发明人： BAIK, Chanwook ,  KIM, Hyochul ,  PARK, Yeonsang

IPC分类号： H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/065 ,  H01S5/22

CPC分类号： H01S5/24 ,  H01S5/0206 ,  H01S5/0425 ,  H01S5/0653 ,  H01S5/1017 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/1082 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3211 ,  H01S5/343 ,  H01S2301/16 ,  H01S2301/176

摘要： A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer. In the semiconductor laser resonator, the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion.

公开(公告)号：EP3018775A4

公开(公告)日：2016-08-10

申请号：EP13891624

申请日：2013-08-15

申请人： HUAWEI TECH CO LTD

发明人： SONG XIAOLU

IPC分类号： H01S5/10 ,  H01S3/10

CPC分类号： H01S5/4025 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/0085 ,  H01S5/02248 ,  H01S5/06226 ,  H01S5/1042 ,  H01S5/142 ,  H01S5/4012

摘要： In the field of optical networks, a laser, a laser modulation method and a laser combination system are disclosed. The laser (1) includes a gain medium (11), a resonator (12), and a second microring resonator (13), where the resonator (12) includes a first cavity mirror (121), and a second cavity mirror (122), the first cavity mirror (121) is located at one port of the gain medium (11), the second cavity mirror (122) is located at the other port of the gain medium (11), and the second cavity mirror (122) includes a splitter (1221), a first microring resonator (1222), and a reflecting grating (1223). Embodiments of the present invention resolve problems that it is difficult to resolve an optical eye diagram of output by an existing directly modulated laser due to limited performance of the laser during high-speed modulation and that it is difficult to integrate the laser.

公开(公告)号：EP2475056B1

公开(公告)日：2015-04-22

申请号：EP10813506.2

申请日：2010-09-01

申请人： Nippon Telegraph And Telephone Corporation

发明人： MATSUO, Shinji ,  KAKITSUKA, Takaaki ,  NOTOMI, Masaya ,  SHINYA, Akihiko

IPC分类号： H01S5/10 ,  H01S5/04 ,  H01S5/026 ,  H01S5/042 ,  H01S5/50

CPC分类号： H01S5/105 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0424 ,  H01S5/1042 ,  H01S5/50

公开(公告)号：EP2286493A1

公开(公告)日：2011-02-23

申请号：EP09742417.0

申请日：2009-04-28

申请人： Scuola Normale Superiore

发明人： TREDICUCCI, Alessandro ,  BELTRAM, Fabio ,  MAHLER, Lucas

IPC分类号： H01S5/10 ,  H01S5/18 ,  H01S5/34 ,  H01S5/20 ,  H01S5/42 ,  H01S5/187

CPC分类号： H01S5/3401 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/1042 ,  H01S5/1046 ,  H01S5/1071 ,  H01S5/1075 ,  H01S5/18 ,  H01S5/187 ,  H01S5/2004 ,  H01S5/42 ,  H01S2302/02

摘要： A circular semiconductor laser, comprising a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a circular perimeter, along which the first layer (2) radiation guide has a plurality of radial cuts (4) forming a lattice. The number of said cuts 4 is a prime number, or an odd number that is a multiple of a prime number, said prime number greater than or equal to five. This way, it is avoided that resonance modes evolve outside of the zone with the cuts, or in any case with a component that is different from zero of the wave vector in a radial direction, and a pure whispering gallery operating mode is obtained, with maximum of the emitted radiation that evolves in a vertical direction, i.e. orthogonal to the plane of the laser resonator, and without that the laser emitted radiation evolves in a radial direction.

公开(公告)号：EP1994552A2

公开(公告)日：2008-11-26

申请号：EP07863327.8

申请日：2007-03-09

申请人： STC.UNM

发明人： HERSEE, Stephen M. ,  WANG, Xin ,  SUN, Xinyu

IPC分类号： H01L21/20

CPC分类号： H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

公开(公告)号：EP1554618A2

公开(公告)日：2005-07-20

申请号：EP03816213.7

申请日：2003-10-02

申请人： California Institute of Technology

发明人： ARMANI, Deniz, K. ,  KIPPENBERG, Tobias, J. ,  SPILLANE, Sean, M. ,  VAHALA, Kerry, J.

IPC分类号： G02B6/12

CPC分类号： G02B6/12007 ,  G02B6/29343 ,  H01S3/0627 ,  H01S3/083 ,  H01S5/1042 ,  H01S5/1075

摘要： A micro-cavity resonator (100) including a micro-cavity (110) capable of high and ultra-high Q values and a silicon substrate (120). Portions of the silicon substrate (120) located below a periphery of the micro-cavity (110) are removed to form a pillar, which supports the micro­cavity (110). Optical energy travels along an inner surface of the micro-cavity.

公开(公告)号：EP1285479A1

公开(公告)日：2003-02-26

申请号：EP01940614.9

申请日：2001-05-28

申请人： FRANCE TELECOM ,  CENTRE NATIONAL DELA RECHERCHE SCIENTIFIQUE (CNRS)

发明人： GERARD, Jean-Michel ,  GAYRAL, Bruno ,  LE SI, Dang

IPC分类号： H01S5/10 ,  H01S5/34

CPC分类号： H01S5/323 ,  B82Y20/00 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/3412 ,  H01S5/3432

摘要： The invention concerns an optoelectronic component capable of emitting light pulses containing a single photon comprising an optical resonant cavity (100) and a photon-emitting unit (250) placed in said optical cavity (100), a single one of the transmitters (250) having a transmission frequency substantially equal to the resonance frequency (M) of the cavity (100). The invention is characterised in that the set of transmitters (250) has a spectral distribution having a concentration of frequencies of transmitters (250) in a given frequency (P) and the cavity (100) is designed to have a resonance frequency (M) sufficiently far from said concentration frequency (P) for the number of transmitters (250) having a transmission frequency corresponding to the resonance frequency (M) of the cavity (100) to be close to one.

公开(公告)号：EP0533390B1

公开(公告)日：1995-01-04

申请号：EP92308208.5

申请日：1992-09-10

申请人： AT&T Corp.

发明人： McCall, Samuel Leverte

IPC分类号： H01S3/083 ,  H01S3/094 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01S5/1075 ,  H01S5/1042 ,  H01S5/18

公开(公告)号：EP0504851A2

公开(公告)日：1992-09-23

申请号：EP92104703.1

申请日：1992-03-18

申请人： HITACHI, LTD.

发明人： Haraguchi, Keiichi, Hitachidai2-Kyoshin-Ryo 206 ,  Hiruma, Kenji ,  Ogawa, Kensuke ,  Katsuyama, Toshio ,  Yamaguchi, Ken ,  Usagawa, Toshiyuki ,  Yazawa, Masamitsu ,  Masuhara, Toshiaki ,  Morgan, Gerard P. ,  Kakibayashi, Hiroshi

IPC分类号： H01S3/19 ,  H01S3/06 ,  H01S3/085 ,  H01S3/25 ,  H01L33/00 ,  H01L31/0352

CPC分类号： H01L33/24 ,  B82Y20/00 ,  G02B6/4202 ,  H01L33/0062 ,  H01S3/06708 ,  H01S5/0028 ,  H01S5/0217 ,  H01S5/0608 ,  H01S5/1042 ,  H01S5/1228 ,  H01S5/18 ,  H01S5/183 ,  H01S5/223 ,  H01S5/3412 ,  H01S5/4006 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/423 ,  H01S5/5045

摘要： A semiconductor light-emitting device having a plurality of semiconductor rods (9), each of which has a pn junction, formed on a semiconductor substrate (3) such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from said semiconductor rod. With this structure, various novel optical devices such as micro-cavity lasers having an extremely small threshold current and coherent light-emitting devices having no threshold value can be realized.

摘要翻译： 一种半导体发光器件，其具有形成在半导体衬底（3）上的多个半导体棒（9），每个半导体棒具有pn结，使得多个半导体棒以大致等于整数倍的距离 的从所述半导体棒发射的光的波长。 利用这种结构，可以实现诸如具有极小阈值电流的微腔激光器和不具有阈值的相干发光器件等各种新颖的光学器件。