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公开(公告)号：EP3832737B1
公开(公告)日：2024-09-04
申请号：EP21150107.7
申请日：2012-07-02
IPC分类号： H01L31/0224 , H01L31/072 , H01L31/0747
CPC分类号： H01L31/022425 , H01L31/072 , H01L31/0747 , Y02E10/50 , H01L31/02168
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公开(公告)号：EP2876668B1
公开(公告)日：2023-11-15
申请号：EP13819481.6
申请日：2013-07-18
发明人： WATANABE, Akira , YUMOTO, Toru
IPC分类号： H01L21/208 , H01L31/032 , H01L31/0392 , H01L31/072 , H01L31/074 , H01L31/0749 , H01L31/18
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公开(公告)号：EP4169079A1
公开(公告)日：2023-04-26
申请号：EP21736900.8
申请日：2021-06-10
发明人： HILALI, Mohamed M. , ZHANG, Yaping , WEI, Jifeng , LI, Zhiyong , XU, Xiangling
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/072 , H01L31/0747 , H01L31/18 , C03C3/12
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公开(公告)号：EP4167300A1
公开(公告)日：2023-04-19
申请号：EP20941464.8
申请日：2020-12-10
发明人： WU, Zhao , XU, Chen , LI, Zifeng
IPC分类号： H01L31/072 , H01L31/0224 , H01L31/18
摘要： A back-contacting solar cell and a producing method, and a back-contacting cell assembly, which relates to the technical field of photovoltaics. The back-contacting solar cell includes: a silicon substrate (1), wherein a shadow face of the silicon substrate (1) is delimited into a first region and a second region (2), and the second region (2) is doped to form a second-charge-carrier collecting end; a metal-chalcogen-compound layer (4), wherein the metal-chalcogen-compound layer (4) is deposited within at least the first region of the silicon substrate (1), and a region of the metal-chalcogen-compound layer (4) that corresponds to the first region forms a first-charge-carrier collecting end; a first electrode (5), wherein the first electrode (5) is correspondingly provided on the first-charge-carrier collecting end; and a second electrode (6), wherein the second electrode (6) is correspondingly provided within a region that corresponds to the second region (2). The collection and transferring of the first charge carrier are realized by using the first-charge-carrier collecting end. The metal-chalcogen-compound layer (4) has a good adjustability in the structure and the performance, a good thermal stability, and a wide window of process selection, and can realize a lower transverse-conduction capacity and a higher longitudinal-conduction capacity.
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公开(公告)号：EP4117044A1
公开(公告)日：2023-01-11
申请号：EP20922833.7
申请日：2020-11-27
申请人： LG Electronics, Inc.
发明人： LEE, Kyoungsoo , LEE, Giwon , SHIM, Goohwan
IPC分类号： H01L31/0368 , H01L31/0376 , H01L31/0687 , H01L31/072 , H01L31/02 , H01L31/0224 , H01L31/18
摘要： A solar cell according to the present embodiment may have a tandem structure comprising a photovoltaic part, wherein the photovoltaic part comprises: a first photovoltaic part comprising: a photovoltaic layer composed of a perovskite compound; and a second photovoltaic part comprising a semiconductor substrate. Here, in the second photovoltaic part, a first semiconductor layer and a second semiconductor layer, which are formed separately from the semiconductor substrate on one side or the other side of the semiconductor substrate, may have different structures from each other.
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公开(公告)号：EP4075503A1
公开(公告)日：2022-10-19
申请号：EP22177362.5
申请日：2014-05-02
申请人： First Solar, Inc
发明人： BLAYDES, Holly Ann , ANDREINI, Kristian, William , HUBER, William, Hullinger , HINNERS, Eugene, Thomas , SHIANG, Joseph, John , LIANG, Yong , CHOI, Jongwoo
IPC分类号： H01L27/098 , H01L27/14 , H01L27/142 , H01L31/072 , H01L31/18 , H01L31/032 , H01L21/02 , H01L31/0296 , H01L31/068 , H01L31/0224 , H01L31/0272 , H01L31/065 , H01L31/073 , C23C14/06 , H01L31/0392
摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
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公开(公告)号：EP4046206A1
公开(公告)日：2022-08-24
申请号：EP20824306.3
申请日：2020-11-26
IPC分类号： H01L31/042 , H01L31/072 , H01L21/78 , H01L31/18
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78.发明公开
公开(公告)号：EP3933940A1
公开(公告)日：2022-01-05
申请号：EP20763204.3
申请日：2020-02-28
发明人： SHIBASAKI, Soichiro , HONISHI, Yuya , YAMAZAKI, Mutsuki , NAKAGAWA, Naoyuki , YOSHIO, Sara , HIRAOKA, Yoshiko , YAMAMOTO, Kazushige
IPC分类号： H01L31/18 , H01L31/072 , H01L31/078 , C23C14/08 , C23C14/34
摘要： Problems to be solved by the present invention provide a method for manufacturing a stacked thin film with excellent transparency, a method for manufacturing a solar cell, and a method for manufacturing a solar cell module.
[Solution to Problem]
A method for manufacturing a stacked thin film of an embodiment, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24 × d [Pa] or more and 2.4 × d [Pa] or less when a deposition rate is d [pm/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300°C or more and 600°C or less, in formation of the photoelectric conversion layer.-
公开(公告)号：EP3832737A1
公开(公告)日：2021-06-09
申请号：EP21150107.7
申请日：2012-07-02
发明人： Papet, Pierre , Lachenal, Damien
IPC分类号： H01L31/0224 , H01L31/072 , H01L31/0747
摘要： The present invention relates to a method of manufacturing a hetero-junction solar cell with edge isolation, the solar cell having a front side for an incidence of light into the solar cell and a back side opposite to the front side. The method includes the steps of: providing a doped and textured semiconductor substrate, said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate; forming at least one front layer on the front surface of the semiconductor substrate, said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase; forming at least one back layer on the back surface of the semiconductor substrate, said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase; forming an electrically conductive anti-reflection coating on the at least one front layer, said anti-reflection coating covering the whole surface of the at least one front layer and being at least partially transparent to the light irradiating into the solar cell; forming an electrically conductive back coating on the at least one back layer; and forming a front grid metallization on the anti-reflection coating. The invention further relates to an according edge isolated hetero-junction solar cell. It is the object of the present invention to provide an easy and low-cost method of manufacturing of a hetero-junction solar cell and an according solar cell, wherein short circuits between the front and the back side of the solar cell are prevented and the solar cell is not damaged by the method steps and shows good cell performance. This object is solved by a method of the above mentioned type and an according hetero-junction solar cell, wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate, leaving a merging region consisting of a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating, wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating.
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80.发明公开
公开(公告)号：EP3633741A1
公开(公告)日：2020-04-08
申请号：EP19197536.6
申请日：2019-09-16
发明人： HERMLE, Martin , JANZ, Stefan
IPC分类号： H01L31/18 , H01L31/072 , H01L31/0747 , H01L31/068 , H01L21/223
摘要： Die Erfindung betrifft ein Verfahren zur Herstellung einer photovoltaischen Solarzelle mit mindestens einem eindiffundierten Diffusionsbereich und mindestens einem Heteroübergang, mit den Verfahrensschritten
A. Bereitstellen mindestens eines Halbleitersubstrats (1) mit einer Basisdotierung;
B. Erzeugen des Heteroübergangs an einer Rückseite des Halbleitersubstrats, welcher Heteroübergang mit einer dotierten, siliziumhaltigen Heteroübergangsschicht (5) und einer mittelbar oder unmittelbar zwischen Heteroübergangsschicht und Halbleitersubstrat angeordneten dielektrischen Tunnelschicht (4) ausgebildet wird,
C. Texturieren (3) der Oberfläche des Halbleitersubstrats zumindest an einer der Rückseite gegenüberliegenden Vorderseite des Halbleitersubstrats;
D. Erzeugen des Diffusionsbereiches (2) an der Vorderseite des Halbleitersubstrats durch Eindiffundieren zumindest eines Diffusions-Dotierstoffes mit einem der Basisdotierung entgegengesetzten Dotierungstyp in das Halbleitersubstrat;
Die Erfindung ist dadurch gekennzeichnet, dass die vorgenannten Verfahrensschritte - mit oder ohne Zwischenschaltung weiterer Verfahrensschritte - in der Reihenfolge A-C-B-D durchgeführt werden, dass in Verfahrensschritt D der Diffusionsbereich mittels Diffusion aus der Gasphase bei einer Temperatur im Bereich 700°C bis 1200°C in einer sauerstoffarmen Atmosphäre bei Zufuhr eines den Dotierstoff enthaltenden Dotier-Gasgemisches erzeugt wird, dass nach Verfahrensschritt D - mit oder ohne Zwischenschaltung weiterer Verfahrensschritte - zumindest in einem Verfahrensschritt D1 eine Temperaturbehandlung bei einer Temperatur im Bereich 700°C bis 1200°C ohne Zufuhr des Dotier-Gasgemisches erfolgt, um den Diffusions-Dotierstoff in das Halbleitersubstrat einzutreiben und um die dotierte Heteroübergangsschicht zu aktivieren und dass Verfahrensschritte D und D1 in-situ durchgeführt und währenddessen die Rückseite des Halbleitersubstrates durch ein diffusionshemmendes Element geschützt wird, welches nicht Bestandteil der Solarzelle ist.
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