Quasi-surface emission vertical-type organic light-emitting transistors and method of manufacturing the same
    89.
    发明公开
    Quasi-surface emission vertical-type organic light-emitting transistors and method of manufacturing the same 审中-公开
    垂直,有机发光晶体管具有准表面发射和工艺及其生产

    公开(公告)号:EP2760060A1

    公开(公告)日:2014-07-30

    申请号:EP13197627.6

    申请日:2013-12-17

    IPC分类号: H01L51/52

    CPC分类号: H01L51/057 H01L51/5296

    摘要: An organic light-emitting transistor may include a mesh-type source electrode (40) having a plurality of apertures (400) in an array pattern. The mesh-type source electrode (40) may be located between the gate electrode (20) and the drain electrode (80). The organic light-emitting transistor adopting a mesh-type source electrode (40) may show quasi-surface emission characteristics similar to that of the organic light-emitting diode. Moreover, an aperture ratio, brightness, and light emission efficiency of the organic light-emitting transistor may be superior to those of an organic light-emitting diode. Another advantage is that the production cost may be reduced since an additional driving element such as a thin-film-transistor is not needed.

    摘要翻译: 一种有机发光晶体管可以包括在阵列中具有孔径(400)的多个A网格型源极电极(40),图案。 网格型源极电极(40)可以位于所述栅电极(20)和漏极电极(80)之间。 的有机发光晶体管采用的网型源极电极(40)可以示出那样的发光二极管的类似有机准表面发射特性。 更完了,在开口率,亮度,和所述有机发光晶体管的发光效率可能优于那些有机发光二极管的。 另一个优点是没有生产成本可由于在额外的驱动元件被减少:如不需要的薄膜晶体管。