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598 条记录 (耗时 0.012 秒)

    Magnetoresistive sensor
    81.
    发明公开
    Magnetoresistive sensor 失效
    磁电阻Fühler。

    公开(公告)号：EP0529959A2

    公开(公告)日：1993-03-03

    申请号：EP92307640.0

    申请日：1992-08-21

    申请人： International Business Machines Corporation

    发明人： Dieny, Bernard ,  Gurney, Bruce Alvin ,  Parkin, Stuart Stephen Papworth ,  Sanders, Ian Lewis ,  Speriosu, Virgil Simon ,  Wilhoit, Dennis Richard

    IPC分类号： G01R33/06 ,  H01F10/00 ,  H01F10/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A magnetoresistive sensor comprising a layered structure having at least one bilayer comprising a first thin film (12) of ferromagnetic material in interfacial contact with a second thin film (14) of nonferromagnetic metallic material, characterised by the bilayer comprising a third thin film (16) of material within said first thin film of ferromagnetic material, said third thin film having a thickness of between a fraction of a monolayer and several monolayers and being located at a predetermined distance x from the interface between said first and said second thin film layers.

    摘要翻译： 一种磁阻传感器，包括具有至少一个双层的层状结构，所述双层包括与非铁磁金属材料的第二薄膜界面接触的铁磁材料的第一薄膜，其特征在于，所述双层包括在所述第一薄膜 铁磁材料，所述第三薄膜具有介于单层的几分之一和几个单层之间的厚度，并且位于距所述第一和第二薄膜层之间的界面预定距离x处。

    Double carrier deflection high sensitivity magnetic sensor
    82.
    发明公开
    Double carrier deflection high sensitivity magnetic sensor 失效
    双载波偏移高灵敏度磁传感器

    公开(公告)号：EP0413154A3

    公开(公告)日：1992-03-11

    申请号：EP90113718.2

    申请日：1990-07-18

    申请人： International Business Machines Corporation

    发明人： Fang, Frank Fu ,  Tang, Denny Duan-lee

    IPC分类号： G01R33/06 ,  H01L29/82

    CPC分类号： H01L29/82 ,  H01L43/065

    摘要： Apparatus for a bipolar active semiconductor magnetic field sensor (300) that has a higher sensitivity than semiconductor field sensors presently existing in the art. Specifically, the inventive sensor (300) utilizes a semiconductor structure containing a single emitter layer (310), a single base layer (320) that is overlaid over the emitter layer (310) and two separate oppositely situated collectors (333,337) located above the base layer (320). A bias lateral majority carrier flow (530,540) is established, in preferably and respectively both the base and emitter layers (electrons in the emitter, holes in the base), that flows in opposite directions in these layers and is oriented normal (transverse) both to the direction of transistor current and to the direction of a magnetic field (550) that is to be detected. When the magnetic field (550) is applied to the sensor, this field imparts a Lorentz force to these carriers which causes these majority carriers to deflect in the same direction (510,520) in both the emitter and base layers, respectively. The resulting deflection of these carriers, in turn, produces local Hall effect voltages, that are proportional to the strength of the magnetic field, across the emitter-base junction that locally increases the forward bias of this junction near one collector and locally decreases the forward bias of this junction near the other collector so as to exponentially increase the collector current (Ic) flowing through one collector while exponentially decreasing the collector current flow through the other collector. Inasmuch as the exponential collector current flow is a very sensitive function of emitter-base voltage, the inventive sensor is substantially more sensitive than semiconductor sensors known in the art.

    Apparatus for measuring distribution of magnetic field
    83.
    发明公开
    Apparatus for measuring distribution of magnetic field 失效
    Gerätzum Messen der Magnetfeldverteilung。

    公开(公告)号：EP0444873A2

    公开(公告)日：1991-09-04

    申请号：EP91301531.9

    申请日：1991-02-26

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Shintaku, Hidetaka

    IPC分类号： G01R33/035 ,  G01R33/06

    CPC分类号： G01R33/09 ,  G01R33/0352 ,  Y10S505/845

    摘要： A magnetic field distribution measuring apparatus for measuring an external magnetic field distribution includes a substrate (1) made of a nonmagnetic material and having opposite surfaces, a plurality of magnetoresistive elements (15) deposited on one surface of the substrate (1) and each made of a superconductive material having a weak coupling at the grain boundaries. Coils (5a, 5b, 20a, 20b) are provided on the other surface of the substrate (1) at positions corresponding to the magnetoresistive elements (15). The coils are sequentially applied with AC current to produce AC magnetic field having a peak value greater than a magnetic field threshold level at which the magnetoresistive element (15) changes the state from a superconductive state to a magnetoresistive state. Detecting the degree of magnetoresistive from each magnetoresistive element (15), the magnetic field distribution can be detected.

    摘要翻译： 用于测量外部磁场分布的磁场分布测量装置包括由非磁性材料制成且具有相对表面的基板（1），沉积在基板（1）的一个表面上的多个磁阻元件（15） 的在晶界处具有弱耦合的超导材料。 在对应于磁阻元件（15）的位置处，在基板（1）的另一个表面上设置线圈（5a，5b，20a，20b）。 线圈顺序地施加有交流电流以产生具有大于磁阻阈值电平的峰值的交流磁场，在该磁场阈值电平处，磁阻元件（15）将状态从超导状态改变为磁阻状态。 从每个磁阻元件（15）检测磁阻的程度，可以检测磁场分布。

    Ferrous object sensor assembly
    84.
    发明公开
    Ferrous object sensor assembly 无效
    FERROUS对象传感器总成

    公开(公告)号：EP0387781A3

    公开(公告)日：1991-02-06

    申请号：EP90104717.5

    申请日：1990-03-13

    申请人： DURAKOOL INCORPORATED

    发明人： Wolf, Ronald J. ,  Hedeen, Larry

    IPC分类号： G01R33/06

    CPC分类号： G01V3/08

    摘要： A ferrous object sensor assembly (50) in accordance with the invention is capable of sensing the presence or absence of an object of high magnetic permeability, such as a tooth or notch on a rotatably mounted ferrous wheel at zero speed and imme­diately upon power-up and, thus, may be used as a proximity sensor. The ferrous object sensor assembly (50) is comprised of a permanent magnet (34) and a magnetic flux responsive sensor (30) having a sensing plane (32) which produces an electrical output signal varying as a function of the change in magnetic flux density. The ferrous object sensor assembly (50) does not rely upon pole face magnetism as some known conventional sen­sors but, rather, relies upon the radial component of magnetic flux emanating from a lateral surface of the magnet (34) inter­mediate opposing pole faces (P′, P˝). Since the ferrous object sensor assembly (50) does not rely on pole face magnetism, its electrical output signal is relatively stable over a relatively wide temperature range.

    Capteur à effet magnétorésistif
    86.
    发明公开
    Capteur à effet magnétorésistif 失效
    Magnetwiderstandseffektwandler。

    公开(公告)号：EP0406060A1

    公开(公告)日：1991-01-02

    申请号：EP90401712.6

    申请日：1990-06-19

    申请人： THOMSON-CSF

    发明人： Friederich, Alain ,  Creuzet, Gérard

    IPC分类号： G11B5/39 ,  G01R33/06

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/12632

    摘要： La présente invention concerne un capteur à effet magnétorésistif. Dans ce capteur, l'élément sensible est constitué par une multicouche métallique magnétique monocristalline (2) formée d'un empilement de couches (20) en un matériau magnétique séparées par des couches (21) en un matériau non-magnétique, la multicouche étant réalisée de telle sorte que les couches en matériau magnétique présentent un couplage de type anti-ferromagnétique et que la transition entre l'état d'arrangement anti-parallèle et l'état d'arrangement parallèle se réalise sur un intervalle de champ magnétique très faible.
    Application à l'enregistrement magnétique.

    摘要翻译： 在该传感器中，敏感元件由由由非磁性材料制成的层（21）分隔的由磁性材料制成的一叠层（20）形成的单晶硅磁性金属多层（2）组成，多层是 产生使得由磁性材料制成的层具有反铁磁型耦合，并且在非常小的磁场间隔上产生反并联排序状态和平行排序状态之间的转变。 ... 应用于磁记录。 ... ...

    Magnetic field sensitive semiconductor device
    87.
    发明公开
    Magnetic field sensitive semiconductor device 失效
    Magnetfeld empfindlicher Halbleiter。

    公开(公告)号：EP0402271A2

    公开(公告)日：1990-12-12

    申请号：EP90401580.7

    申请日：1990-06-08

    申请人： MITSUBISHI PETROCHEMICAL CO., LTD. ,  Nakamura, Tetsuro

    发明人： Nakamura, Tetsuro ,  Kikuchi, Satoshi, C/o Electronic Products Dev.

    IPC分类号： G01R33/06

    CPC分类号： G01R33/06 ,  G01R33/066

    摘要： A magnetic sensitive semiconductor (10) according to the invention includes an emitter electrodes (6), at least three collector electrodes (C1...C3) arranged substantially equidistantly from the emitter electrode and spaced apart substantially equidistantly in order to extract carriers outputted by the emitter electrode and migrating through a semiconductor, and a first base electrode (B1, B4) for accelerating the carriers in the direction of the collector electrodes from the emitter electrode, the collector electrodes at both ends of the at least three collector electrodes serving as collector output electrodes. By virtue of such an arrangement, carriers unnecessary for field direction are eliminated to provide a magnetic sensitive semiconductor having excellent sensitivity.

    摘要翻译： 根据本发明的磁敏半导体（10）包括发射电极（6），至少三个集电极（C1 ... C3），其基本上等距离地从发射极电极排列并且基本上等距离间隔开，以便提取由 发射电极并通过半导体迁移;以及第一基极（B1，B4），用于从发射电极沿集电极的方向加速载流子，所述至少三个集电极的两端的集电极用作 集电极输出电极。 通过这样的布置，消除了不需要场方向的载体，以提供具有优异灵敏度的磁敏半导体。