公开(公告)号：EP2546670B1

公开(公告)日：2016-11-30

申请号：EP12004922.6

申请日：2012-07-02

申请人： Micronas GmbH ,  Albert-Ludwigs-Universität Freiburg

发明人： Raz, Roiy ,  Kaufmann, Timo ,  Ruther, Patrick, Dr. ,  Paul, Oliver, Prof. Dr.

IPC分类号： G01R33/07

CPC分类号： G01R33/07 ,  G01R33/066 ,  G01R33/077

公开(公告)号：EP2746799B1

公开(公告)日：2016-04-20

申请号：EP12198395.1

申请日：2012-12-20

申请人： NXP B.V.

发明人： Zieren, Victor ,  Heringa, Anco ,  Wunnicke, Olaf ,  Slotboom, Jan ,  van Veldhoven, Robert ,  Claes, Jan

IPC分类号： G01R33/06 ,  H01L29/82 ,  H01L43/06

CPC分类号： H01L43/02 ,  G01R33/066 ,  H01L29/735 ,  H01L29/82 ,  H01L29/8611

公开(公告)号：EP2546670A2

公开(公告)日：2013-01-16

申请号：EP12004922.6

申请日：2012-07-02

申请人： Micronas GmbH ,  Albert-Ludwigs-Universität Freiburg

发明人： Roiy, Raz ,  Kaufmann, Timo ,  Ruther, Patrick, ,  Paul, Oliver, Prof. Dr.

IPC分类号： G01R33/07

CPC分类号： G01R33/07 ,  G01R33/066 ,  G01R33/077

摘要： Hallsensor aufweisend, ein erstes Hallelement mit einem ersten Anschlusskontakt und mit einem zweiten Anschlusskontakt und mit einem dritten Anschlusskontakt, ein zweites Hallelement mit einem vierten Anschlusskontakt und mit einem fünften Anschlusskontakt und mit einem sechsten Anschlusskontakt, ein drittes Hallelement mit einem siebten Anschlusskontakt und mit einem achten Anschlusskontakt und mit einem neunten Anschlusskontakt und ein viertes Hallelement mit einem zehnten Anschlusskontakt und mit einem elften Anschlusskontakt und mit einem zwölften Anschlusskontakt, wobei das erste Hallelement und das zweite Hallelement und das dritte Hallelement und das vierte Hallelement in Serie geschaltet sind.

摘要翻译： 霍尔效应传感器（10）具有多个具有连接元件的霍尔元件（20,30,40,50）（23,26,29,33,36,39,43,46,49,53,56,59 ）。 霍尔元件串联连接形成电路。 连接元件（23）与连接元件（59）连接。 连接元件（29）与连接元件（33）互连，连接元件（39）与连接元件（43）互连，连接元件（49）与连接元件（53）互连。

公开(公告)号：EP2203756A1

公开(公告)日：2010-07-07

申请号：EP08807981.9

申请日：2008-10-16

申请人： NXP B.V.

发明人： ZIEREN, Victor ,  WOLTERS, Robertus, A., M.

IPC分类号： G01R33/06 ,  H01L43/06

CPC分类号： G01R33/06 ,  G01R33/0088 ,  G01R33/066

摘要： The invention relates to a magnetic field sensor comprising a substrate having a first side (S1). The substrate comprises at the first side (S1) a silicon comprising semiconductor layer (P-SUB) which comprises a buried N-well (DNW). A bipolar transistor having an emitter region (PE+, NE+), a base region (PB+, NB+), and a first collector region (CLR1) and a second collector region, is provided in the silicon comprising semiconductor layer (P-SUB). The emitter region (PE+, NE+) is located at the first side (S1) above the buried N-well (DNW). According to the invention the bipolar transistor is arranged such that, in operation, a part of an emitter current (IEM) that traverses the base region (PB+, NB+) is distributed over the first and second collector regions (CLR1, CLR2) obtaining a first and a second collector current (ICL1, ICL2), wherein a difference between the first and second collector currents (ICL1, ICL2) is determined by a magnetic field component (B x, B z ) perpendicular to a current plane. A bipolar magneto-transistor structure is obtained which is compatible with triple-well technology and that is sensitive to magnetic fields in a direction perpendicular to the current plane. The magnetic field sensor is compatible with triple-well technology and has a high linearity and a high sensitivity. The invention further relates to an integrated circuit comprising such magnetic field sensor (Snsr) and a card provided with such integrated circuit.

摘要翻译： 本发明涉及一种磁场传感器，其包括具有第一侧（S1）的衬底。 衬底在第一侧（S1）包括包含埋入式N阱（DNW）的含硅半导体层（P-SUB）。 在含硅半导体层（P-SUB）中提供具有发射极区域（PE +，NE +），基极区域（PB +，NB +）以及第一集电极区域（CLR1）和第二集电极区域的双极型晶体管。 发射极区域（PE +，NE +）位于掩埋N阱（DNW）上方的第一侧（S1）。 根据本发明，双极晶体管被布置为使得在操作中，穿过基极区域（PB +，NB +）的发射极电流（IEM）的一部分分布在第一和第二集电极区域（CLR1，CLR2）上，从而获得 第一和第二集电极电流（ICL1，ICL2），其中第一和第二集电极电流（ICL1，ICL2）之差由垂直于当前平面的磁场分量（Bx，Bz）确定。 获得了与三阱技术兼容且对垂直于电流平面的方向上的磁场敏感的双极磁 - 晶体管结构。 磁场传感器兼容三阱技术，线性度高，灵敏度高。 本发明还涉及包括这种磁场传感器（Snsr）的集成电路和提供有这种集成电路的卡。

公开(公告)号：EP1438755B1

公开(公告)日：2005-01-26

申请号：EP02779161.5

申请日：2002-10-15

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： HACKNER, Michael ,  ERNST, Roland ,  HOHE, Hans-Peter

IPC分类号： H01L43/06

CPC分类号： G01R33/075 ,  G01R33/066 ,  G01R33/077 ,  H01L43/065

摘要： The invention relates to a vertical Hall sensor in which an electroconductive region (2) extends into a substrate (1), perpendicularly to the surface of said substrate (1), in order to form a Hall sensor element (4), and comprises a plurality of first connection areas (3) along a lateral surface on the surface of the substrate (1). The inventive Hall sensor is characterised in that at least one second similar Hall sensor element (5) is arranged in the substrate (1) parallel to the first Hall sensor element (4), and is connected to the first Hall sensor element (4) in such a way that when the Hall sensor is operated according to the spinning current technique, the same combination of control current distributions is obtained in the Hall sensor in each spinning current phase. When the inventive vertical Hall sensor is operated according to the spinning current technique, it enables the offset to be significantly reduced without requiring a weighting of the individual spinning current phases.

公开(公告)号：EP1438755A2

公开(公告)日：2004-07-21

申请号：EP02779161.5

申请日：2002-10-15

申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

发明人： HACKNER, Michael ,  ERNST, Roland ,  HOHE, Hans-Peter

IPC分类号： H01L43/06

CPC分类号： G01R33/075 ,  G01R33/066 ,  G01R33/077 ,  H01L43/065

摘要： The invention relates to a vertical Hall sensor in which an electroconductive region (2) extends into a substrate (1), perpendicularly to the surface of said substrate (1), in order to form a Hall sensor element (4), and comprises a plurality of first connection areas (3) along a lateral surface on the surface of the substrate (1). The inventive Hall sensor is characterised in that at least one second similar Hall sensor element (5) is arranged in the substrate (1) parallel to the first Hall sensor element (4), and is connected to the first Hall sensor element (4) in such a way that when the Hall sensor is operated according to the spinning current technique, the same combination of control current distributions is obtained in the Hall sensor in each spinning current phase. When the inventive vertical Hall sensor is operated according to the spinning current technique, it enables the offset to be significantly reduced without requiring a weighting of the individual spinning current phases.

公开(公告)号：EP0244577B1

公开(公告)日：1991-01-02

申请号：EP87102488.1

申请日：1987-02-21

申请人： Landis & Gyr Betriebs AG

发明人： Popovic, Radivoje ,  Krause, Axel

IPC分类号： H01L43/06 ,  H01L27/22

CPC分类号： H01L27/22 ,  G01R33/066 ,  H01L43/065

公开(公告)号：EP3321715A1

公开(公告)日：2018-05-16

申请号：EP16198342.4

申请日：2016-11-11

申请人： Mettler-Toledo Safeline Limited

发明人： BUTTERWORTH, Daren ,  BLACKBURN, Andrew

IPC分类号： G01V3/10 ,  G01V13/00

CPC分类号： G01N27/023 ,  G01N27/9013 ,  G01R27/267 ,  G01R33/0385 ,  G01R33/066 ,  G01V3/102 ,  G01V3/104 ,  G01V3/107 ,  G01V13/00

摘要： The method allows testing a metal detection apparatus (9) with entrance and exit apertures (2A, 2B) adjoining a transfer channel (90) along which products (P) are movable through a coil system (6) that defines a detection zone (60) and comprises a transmitter coil (61) and a first and a second receiver coil (62, 63) dimensioned such that a current applied to the transmitter coil (61) induces a first coil signal in the first receiver coil (62) and a second coil signal in the second receiver coil (63), that do not compensate one another when metal (C) is present in the transferred products (P), which causes an input signal within a signal processing path (4, 5) of the metal detection apparatus (9), and with at least one test device (7) that comprises at least one test article (79) that is movable through the detection zone (60). The method comprising the steps of moving the test article (79) through the detection zone (60) along a first transfer axis (ca) and measuring a first input signal for which a first threshold (th1) is determined such that the amplitude of the first input signal exceeds the first threshold (th1); moving an identical test article (79) through the detection zone (60) along a second or further transfer axis (ta; ...) and measuring a second or further input signal for which a second or further threshold (th2; ...) is determined such that the amplitude of the second or further input signal exceeds the second or further threshold (th2; ...) and selecting said first, second or further threshold (th1; th2; ...) in the signal processing path (4) whenever the test article (79) is moved along the related first, second or further transfer axis (ca; ta; ...).

摘要翻译： 该方法允许测试金属检测装置（9），该金属检测装置具有邻接传输通道（90）的入口和出口孔（2A，2B），产品（P）沿着该传输通道可移动通过限定检测区（60）的线圈系统 ）并且包括发送器线圈（61）以及第一和第二接收器线圈（62,63），所述第一和第二接收器线圈的尺寸被设定为使得施加到发送器线圈（61）的电流在第一接收器线圈（62）中感应第一线圈信号， 当传送产品（P）中存在金属（C）时，第二接收器线圈（63）中的第二线圈信号不相互补偿，这导致在信号处理路径（4,5）内的输入信号 金属检测装置（9）以及至少一个测试装置（7），所述测试装置（7）包括至少一个可移动通过所述检测区域（60）的测试物品（79）。 该方法包括以下步骤：沿着第一传递轴线（ca）移动测试物品（79）通过检测区域（60）并且测量确定了第一阈值（th1）的第一输入信号，使得 第一输入信号超过第一阈值（th1）; 沿着第二或另一传送轴线（ta; ...）移动相同的测试物品（79）通过检测区域（60）并测量第二或另一输入信号，其中第二或另一阈值（th2; ...） ）被确定为使得第二或另外的输入信号的幅度超过第二或另外的阈值（th2; ...）并且在信号处理路径中选择所述第一，第二或另外的阈值（th1; th2; ...） （4）每当测试物品（79）沿着相关的第一，第二或另外的传送轴线（ca; ta; ...）移动时。

公开(公告)号：EP2963435B1

公开(公告)日：2017-01-25

申请号：EP14175285.7

申请日：2014-07-01

申请人： NXP B.V.

发明人： Zieren, Victor ,  Wunnicke, Olaf ,  Reimann, Klaus

IPC分类号： G01R33/06

CPC分类号： G01R33/066 ,  G01R33/0206 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

摘要： A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104). On the surface (104) is arranged a central emitter structure (110, 210, 310) formed substantially mirror symmetrical with respect to a symmetry plane (106, 206, 306) that is substantially perpendicular to the surface (104, 204, 304), and a first and a second collector structure (116, 216, 316; 118, 218, 318), each of which is arranged spaced apart from the emitter structure (110, 210, 310) and which are arranged on opposite sides of the symmetry plane (106, 206, 306) so as to be substantially mirror images of each other. The first magnetic field sensor (100) is operated double-sided in that its first collector structure (116) and its emitter structure (110) are externally connected via a first read-out circuitry and its second collector structure (118) and its emitter structure (110) are externally connected via a second read-out circuitry. The second magnetic field sensor (200) is operated single-sided in that its first collector structure (216) and its emitter structure (210) are externally connected via a third read-out circuitry. The third magnetic field sensor (300) is operated single-sided in that its second collector structure (318) and its emitter structure (310) are externally connected via a fourth read-out circuitry.

摘要翻译： 一种差动的磁场传感器系统（10）设置，其中，偏移消除在布置成靠近海誓山盟磁场传感器差动半导体结构得以实现。 该系统（10）包括第一，第二和第三磁场传感器（100，200，300），每个的所有基本上相同layouted并且包括，优选硅 - 绝缘体（SOI），表面层部分（ 102），其上的表面部分，优选SOI晶片和具有表面（104）提供。 上表面（104）布置在形成大致镜像对称的相对于对称平面（106，206，306），其基本上中央发射极结构（110，210，310）在垂直于表面（104，204，304） 以及第一和第二集电极结构（116，216，316，118，218，318），每个的所有其被布置为从所述发射极结构间隔开（110，210，310）和被布置在相对两侧 对称面（106，206，306），以便大致镜像海誓山盟的图像。 第一磁场传感器（100）被操作的双面在没有它的第一个集电极结构（116），其发射极结构（110）经由第一读出电路和它的第二集电极结构（118），其发射极在外部连接 结构（110）通过第二读出电路连接外部。 在单面做它的第一个集电极结构（216），其发射极结构（210）通过第三读出电路从外部连接的第二磁场传感器（200）被操作。 第三磁场传感器（300）被操作单面，DASS其第二集电极结构（318），其发射极结构（310）经由第四读出电路在外部连接。

公开(公告)号：EP2495578B1

公开(公告)日：2013-09-18

申请号：EP11250250.5

申请日：2011-03-04

申请人： NXP B.V.

发明人： Zieren, Victor ,  Van Veldhoven, Robert Henrikus Margaretha

IPC分类号： G01R33/06 ,  H01L29/82

CPC分类号： G01R35/005 ,  G01R33/0035 ,  G01R33/06 ,  G01R33/066 ,  H01L29/82

摘要： The disclosure relates to the field of magnetic sensors and associated methods. Certain disclosed embodiments relate to semiconductor (e.g. silicon-based) magnetic sensors, including a magnetic sensor assembly comprising a semiconductor layer (117), the semiconductor layer comprising a first collector (113) and a second collector (114), a first emitter (111) and a second emitter (112); and a governing circuit (120) configured to control and measure current flow independently between the first collector and first emitter in a first direction, and between the second collector and second emitter in a second opposing direction.

摘要翻译： 本公开涉及磁传感器和相关方法领域。 某些公开的实施例涉及半导体（例如基于硅的）磁传感器，包括包括半导体层（117）的磁传感器组件，该半导体层包括第一集电极（113）和第二集电极（114），第一发射极 111）和第二发射极（112）; 以及调节电路（120），被配置为在第一方向上在第一集电器和第一发射极之间以及在第二相对方向上在第二集电极和第二发射极之间独立地控制和测量电流。