MAGNETIC SHEET, MODULE COMPRISING SAME, AND PORTABLE DEVICE COMPRISING SAME

    公开(公告)号:EP3361487A1

    公开(公告)日:2018-08-15

    申请号:EP16853889.0

    申请日:2016-10-05

    摘要: Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.

    Memory device
    2.
    发明公开
    Memory device 有权
    Speichervorrichtung

    公开(公告)号:EP2744002A1

    公开(公告)日:2014-06-18

    申请号:EP12197333.3

    申请日:2012-12-14

    申请人: Hitachi Ltd.

    IPC分类号: H01L43/08 H01F10/08 G11C11/16

    摘要: A memory device is described. The memory device comprises an antiferromagnet (17), an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet tunnel junction (20) can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments (22) in the antiferromagnet, applying an external magnetic field and then cooling the junction to a temperature below the critical temperature.

    摘要翻译: 描述存储器件。 存储器件包括布置在隧道结结构(20)中的反铁磁体(17),绝缘体(18)和电极(19)。 反铁磁体不与任何铁磁体耦合。 反铁磁隧道结(20)的状态可以通过将结加热到等于或高于临界温度的温度来设定,在临界温度下可以重新定向反铁磁体中的磁矩(22),施加外部磁场,然后 将接头冷却至低于临界温度的温度。

    MAGNETORESISTIVES ELEMENT UND DESSEN VERWENDUNG ALS SPEICHERELEMENT IN EINER SPEICHERZELLENANORDNUNG
    5.
    发明公开
    MAGNETORESISTIVES ELEMENT UND DESSEN VERWENDUNG ALS SPEICHERELEMENT IN EINER SPEICHERZELLENANORDNUNG 有权
    磁阻元件和DENEN VERWENDUNG ALS SPEICHERELEMENT在EINER SPEICHERZELLENANORDNUNG

    公开(公告)号:EP1112575A1

    公开(公告)日:2001-07-04

    申请号:EP99942760.2

    申请日:1999-07-01

    IPC分类号: G11C11/16 H01F10/08

    摘要: The invention relates to a magnetoresistive element in which a non-magnetic layer element (3) is arranged between a first ferromagnetic layer element (1) and a second ferromagnetic layer element (2). Said non-magnetic layer element (3) consists of a material which in a temperature range required for the production of the magnetoresistive element presents a diffusion-barrier effect and does not itself diffuse into the adjoining ferromagnetic layer elements. Said magnetoresistive element is suitable for use as both a sensor element and a storage element in a storage cell system.

    摘要翻译: 本发明涉及一种磁阻元件,其中非磁性层元件(3)被布置在第一铁磁层元件(1)和第二铁磁层元件(2)之间。 所述非磁性层元件(3)由在制造磁阻元件所需的温度范围内呈现扩散阻挡效应并且本身不扩散到邻接的铁磁层元件中的材料组成。 所述磁阻元件适合用作存储单元系统中的传感器元件和存储元件。

    MAGNETORESISTIVES ELEMENT UND DESSEN VERWENDUNG ALS SPEICHERELEMENT IN EINER SPEICHERZELLENANORDNUNG
    7.
    发明公开
    MAGNETORESISTIVES ELEMENT UND DESSEN VERWENDUNG ALS SPEICHERELEMENT IN EINER SPEICHERZELLENANORDNUNG 有权
    磁阻元件和其作为存储元件的存储单元安排

    公开(公告)号:EP1105890A1

    公开(公告)日:2001-06-13

    申请号:EP99950494.7

    申请日:1999-08-02

    摘要: According to the invention, a magnetoresistive element has a first ferromagnetic layer element (11), a non-magnetic layer element (13) and a second ferromagnetic layer element (12) disposed in such a way that the non-magnetic layer element (13) is disposed between the first ferromagnetic layer element and the second ferromagnetic layer element (12). The first ferromagnetic layer element (11) and the second ferromagnetic layer element (12) are substantially made of the same material. They differ, however, in terms of their cross section parallel to the interface with the non-magnetic layer element (13) in that at least one of their dimensions has different sizes. The magnetoresistive element is particularly suitable both as sensor element and as storage element in a storage cell array.