摘要:
Provided herein is a magnetic sheet. The magnetic sheet according to one embodiment of the present invention includes a magnetic layer formed of crushed pieces of a magnetic body to improve flexibility of the magnetic sheet, and a thin film coating layer formed on at least one surface of the magnetic layer to maintain the magnetic layer in a sheet shape and buffer an external force applied to the crushed pieces of the magnetic body. According to the present invention, since the magnetic sheet is improved in mechanical strength properties, such as a tensile property, a bending property, and the like, to have significantly superior flexibility, degradation of physical properties, such as magnetic permeability and the like, caused by physical damage such as unintended cracks in the magnetic body provided in the magnetic sheet can be prevented even in the process of storing, transferring, and attaching the magnetic sheet to a target object and during usage of an electronic device provided with the target object to which the magnetic sheet is attached, and the magnetic sheet can be attached to a target surface of the target object with a superior adhering force even when a stepped portion is present at the surface, and at the same time, the magnetic sheet can block the influence of a magnetic field on parts of a portable terminal device or a human body of a user using the portable terminal device, significantly increase transmission and reception efficiencies and distances of a data and/or wireless power signal, and maintain the above-described performance for a long period of time, such that the magnetic sheet can be widely used in various portable devices such as mobile devices, smart appliances, devices for the Internet of Things, and the like.
摘要:
A memory device is described. The memory device comprises an antiferromagnet (17), an insulator (18) and an electrode (19) arranged in a tunnel junction configuration (20). The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet tunnel junction (20) can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments (22) in the antiferromagnet, applying an external magnetic field and then cooling the junction to a temperature below the critical temperature.
摘要:
The invention relates to a magnetoresistive element in which a non-magnetic layer element (3) is arranged between a first ferromagnetic layer element (1) and a second ferromagnetic layer element (2). Said non-magnetic layer element (3) consists of a material which in a temperature range required for the production of the magnetoresistive element presents a diffusion-barrier effect and does not itself diffuse into the adjoining ferromagnetic layer elements. Said magnetoresistive element is suitable for use as both a sensor element and a storage element in a storage cell system.
摘要:
According to the invention, a magnetoresistive element has a first ferromagnetic layer element (11), a non-magnetic layer element (13) and a second ferromagnetic layer element (12) disposed in such a way that the non-magnetic layer element (13) is disposed between the first ferromagnetic layer element and the second ferromagnetic layer element (12). The first ferromagnetic layer element (11) and the second ferromagnetic layer element (12) are substantially made of the same material. They differ, however, in terms of their cross section parallel to the interface with the non-magnetic layer element (13) in that at least one of their dimensions has different sizes. The magnetoresistive element is particularly suitable both as sensor element and as storage element in a storage cell array.
摘要:
The invention relates to a magnetoresistive sensor element, especially an angular sensor element, having a first magnetic layer (1) whose magnetization direction represents a direction reference, a second non magnetic layer (2) formed on the first layer (1) and a third magnetic layer (3) formed on the second layer, the magnetization direction of said third layer being influenced by an external magnetic field, wherein the third layer (3) is at least partially embodied as individual segments (3a).
摘要:
A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer and a second magnetic layer formed on the tunnel barrier layer. The tunnel current flows via the tunnel barrier layer between the first magnetic metal layer and the second magnetic metal layer. The surface of the first magnetic layer carrying the tunnel barrier layer has a surface roughness (Ra) of 0.3 nm or less.