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81.发明公开
公开(公告)号：EP3937256A1
公开(公告)日：2022-01-12
申请号：EP21184739.7
申请日：2021-07-09
IPC分类号： H01L29/775 , H01L29/786 , H01L21/336 , H01L29/08 , B82Y10/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/78
摘要： A semiconductor device includes a first active fin structure (300A) and a second active fin structure (300B) extending along a first lateral direction. The semiconductor device includes a dummy fin structure (600A), also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure. The dummy fin structure includes a material, for example silicon nitride or silicon germanium, that is configured to induce mechanical deformation of a first source/drain structure (1100) coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.
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公开(公告)号：EP3936474A1
公开(公告)日：2022-01-12
申请号：EP20769773.1
申请日：2020-02-06
IPC分类号： C01B32/174 , B82Y10/00 , B82Y30/00 , C01B32/158 , C01B32/168 , H01L29/786 , H01L51/05 , H01L51/30
摘要： A carbon nanotube composition capable of producing an FET having improved mobility is provided. The carbon nanotube composition of the present invention is a halogen-free carbon nanotube composition comprising a carbon nanotube having the following features (1) and (2).
(1) A dispersion liquid obtained by dispersing the carbon nanotube in a solution containing a cholic acid derivative and water has, in the absorption spectrum in the wavelength range of 300 nm to 1100 nm measured by an ultraviolet/visible/near-infrared spectroscopy, the minimum absorbance in the range of 600 nm to 700 nm and the maximum absorbance in the range of 900 nm to 1050 nm; wherein the ratio of the minimum absorbance and the maximum absorbance is 2.5 or more and 4.5 or less; and
(2) the dispersion liquid has the height ratio of the G-band and the D-band (value of (D/G)×100) of 3.33 or less, as measured by a Raman spectrophotometer, using light having a wavelength of 532 nm as excitation light.-
公开(公告)号：EP3929150A1
公开(公告)日：2021-12-29
申请号：EP20208051.1
申请日：2020-11-17
申请人： INTEL Corporation
发明人： CHOUKSEY, Siddharth , AGRAWAL, Ashish , SUNG, Seung , KAVALIEROS, Jack , METZ, Mathew , RACHMADY, Willy , TORRES, Jessica , MITAN, Martin
IPC分类号： B82Y10/00 , H01L29/06 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/775
摘要： Embodiments disclosed herein include nanowire or nanoribbon semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a stack of semiconductor nanowire or nanoribbon channels (410) with a first end and second end. Individual ones of the semiconductor channels comprise a nitrided surface (415), formed by a plasma treatment of the semiconductor channels. The semiconductor device further comprises a source region (405) at the first end of the stack, a drain region (405) at the second end of the stack, a gate dielectric (417) surrounding the nitrided semiconductor channels, and a gate electrode (419) surrounding the gate dielectric.
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公开(公告)号：EP3922596A1
公开(公告)日：2021-12-15
申请号：EP20179631.5
申请日：2020-06-12
申请人： Imec VZW
发明人： Chan, Boon Teik , Li, Ruoyu , Kubicek, Stefan , Jussot, Julien
摘要： The present invention relates to a method for processing a semiconductor device with two closely spaced gates (40-45), wherein closely spaced means below a critical dimension (CD), typically less than 50 or less than 30 nm. The method comprises forming a template structure (1), wherein the template structure includes at least one sub-structure (between the gates 40, 41, 44, 45 and the gates 42 and 43) having a dimension less than the CD. The method further comprises forming a gate layer on and around the template structure. Then, the method comprises removing the part of the gate layer formed on the template structure, and patterning the remaining gate layer into a gate structure including the two gates. Further, the method comprises selectively removing the template structure, wherein the spacing between the two gates is defined by the removed sub-structure, having at the position between the two gates a dimension less than the critical dimension.
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公开(公告)号：EP3912193A1
公开(公告)日：2021-11-24
申请号：EP20702954.7
申请日：2020-01-04
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公开(公告)号：EP3910415A1
公开(公告)日：2021-11-17
申请号：EP20174867.0
申请日：2020-05-15
申请人： Miraex SA
摘要： An apparatus (1) is proposed for providing coupling between at least a first input signal with a first signal frequency, and a second input signal with a second, different signal frequency. The apparatus comprises: a first input port (3); a second input port (5); a first output port (9); a second output port (11); a first waveguide (13) disposed between the first input port (3) and the first output port (9); a second waveguide (15) disposed between the second input port (5) and the second output port (11), the second waveguide (15) being made of or comprising non-linear material such that a first electromagnetic field generated by a first-waveguide signal in the first waveguide (13) and a second electromagnetic field generated by a second-waveguide signal in the second waveguide (15) are arranged to overlap in the non-linear material; a periodic structure (31, 33) at least within the second waveguide (15) and/or on its surface and/or outside of it for creating at least one photonic band gap; and a phase-matching arrangement (37) to cause the first-waveguide signal in the first waveguide (13) and the second-waveguide signal in the second waveguide (15) to be phase-matched or quasi-phase-matched.
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88.发明公开
公开(公告)号：EP3880602A1
公开(公告)日：2021-09-22
申请号：EP19883450.9
申请日：2019-11-13
发明人： REZEQ, Moh'd
IPC分类号： B82Y10/00 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/872
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公开(公告)号：EP3867054A1
公开(公告)日：2021-08-25
申请号：EP19872402.3
申请日：2019-09-27
发明人： LEE, Jaeah
IPC分类号： B32B5/02 , B32B5/12 , B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/158 , C01B32/168 , B29C55/02 , B29C55/04
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公开(公告)号：EP3864586A1
公开(公告)日：2021-08-18
申请号：EP19871859.5
申请日：2019-10-11
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