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公开(公告)号：EP4365966A1
公开(公告)日：2024-05-08
申请号：EP23802428.5
申请日：2023-01-31
发明人： CHEN, Hao , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： Y02P70/50
摘要： The present application provides a bifacial solar cell and a preparation method of the bifacial solar cell, and relates to the field of photovoltaics. The preparation method of the present application utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present application, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of -SiH connected to mono-hydrogen atoms, a lower number of SiH2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.
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公开(公告)号：EP4383350A1
公开(公告)日：2024-06-12
申请号：EP23844159.6
申请日：2023-08-24
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： Y02P70/50
摘要： Embodiments of the present application provide a solar cell and a preparation method thereof, which relates to the field of photovoltaic cell preparation. The solar cell includes: an N-type silicon wafer, where a front surface of the N-type silicon wafer is provided with a doped region containing boron, the doped region is divided into a lightly doped region and a heavily doped region, a boron concentration of the lightly doped region is less than a boron concentration of the heavily doped region, a junction depth of the lightly doped region is less than a junction depth of the heavily doped region; a passivation layer and a first anti-reflection layer that are sequentially stacked on the front surface of the N-type silicon wafer. An area of a surface of the first anti-reflection layer corresponding to the heavily doped region is provided with an electrode. The electrode extends through the first anti-reflection layer and the passivation layer, and is in an ohmic contact with the heavily doped region. The solar cell of the present application can well reduce the contact resistance between the N-type silicon wafer and the electrode, thereby improving cell efficiency.
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公开(公告)号：EP4365960A1
公开(公告)日：2024-05-08
申请号：EP22934773.7
申请日：2022-10-26
发明人： JIANG, Yangxu , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18
摘要： The present application relates to the technical field of photovoltaics, and provides a solar cell and a preparation method thereof. The method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including a first doped region and a second doped region, and a P-type doping concentration of the first doped region being greater than a P-type doping concentration of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The selective emitter and the positive electrode are provided on the front side of the solar cell, the selective emitter includes the first doped region and the second doped region, the P-type doping concentration of the first doped region is greater than the P-type doping concentration of the second doped region, and the positive electrode is in electrical contact with the first doped region. It can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current, such that the solar cell has higher conversion efficiency.
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公开(公告)号：EP4411841A1
公开(公告)日：2024-08-07
申请号：EP23855828.2
申请日：2023-11-28
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/06
CPC分类号： Y02P70/50
摘要： The present application relates to a solar cell and a preparation method thereof, which includes: providing a silicon wafer, firstly forming a P-type doped layer and an N-type doped layer on a front side and a backside of the silicon wafer, respectively, then forming a first aluminum oxide passivation layer and a second aluminum oxide passivation layer on surfaces of the P-type doped layer and the N-type doped layer, respectively, then forming a first silicon nitride anti-reflection layer and a second silicon nitride anti-reflection layer on surfaces of the first aluminum oxide passivation layer and the second aluminum oxide passivation layer, respectively, and lastly forming an electrode by a screen printing. The P-type doped layer is obtained by vapor deposition, and a deposition temperature is 400°C to 600°C.
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公开(公告)号：EP4369424A1
公开(公告)日：2024-05-15
申请号：EP23844160.4
申请日：2023-08-24
发明人： YANG, Tanghui , XING, Guoqiang , WANG, Yongjie
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216
摘要： A double-sided solar cell and a preparation method thereof. The preparation method includes: preparing a semi-finished product of the double-sided solar cell, the semi-finished product including a silicon wafer, and a P-type doped layer, a front passivation layer, and a front anti-reflection layer that are sequentially formed on a front surface of the silicon wafer; providing an opening corresponding to a front finger on a front surface of the semi-finished product, the opening extending through the front anti-reflection layer and the front passivation layer in sequence and exposing a surface of the P-type doped layer; and coating a non-fire-through paste in contact with the P-type doped layer through the opening, sintering the paste, to form the front finger. This preparation method can increase the open circuit voltage of the double-sided solar cell, and improve the conversion efficiency of double-sided solar cell.
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公开(公告)号：EP4365965A1
公开(公告)日：2024-05-08
申请号：EP22942530.1
申请日：2022-12-26
发明人： CHEN, Hao , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： Y02P70/50
摘要： The present application provides a solar cell and a preparation method thereof. The method includes: forming a target amorphous silicon layer on a side of a silicon wafer using a preset process, and then performing an annealing treatment on the target amorphous silicon layer to convert the target amorphous silicon layer into a target polycrystalline silicon layer, wherein the preset process includes at least one cycle period, the at least one cycle period comprises: depositing a target amorphous silicon preformed layer with a preset thickness and performing a hydrogen gas plasma treatment on the target amorphous silicon preformed layer, wherein the preset thickness of the target amorphous silicon preformed layer is less than or equal to a thickness of the target amorphous silicon layer. This method can effectively improve a crystallization rate of converting amorphous silicon into polycrystalline silicon, improving field passivation performance and contact performance of the solar cell.
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公开(公告)号：EP4391091A1
公开(公告)日：2024-06-26
申请号：EP23855808.4
申请日：2023-09-22
发明人： FANG, Mingliang , HOU, Kun , LIU, Zonggang , MA, Lie
CPC分类号： Y02P70/50
摘要： A solar cell and method for preparing the same, and a cell assembly are provided, which belong to the technical field of solar cells. The method for preparing a solar cell includes: oxidation impurity removal and cleaning processes performed between a wet texturing process and a boron/phosphorus diffusion process. The oxidation impurity removal and cleaning processes include: heating a silicon wafer that has been wet-textured loaded in a wafer cassette, to form a first oxide layer to absorb impurities in the silicon wafer; and removing the first oxide layer on the front and back sides of the silicon wafer.
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公开(公告)号：EP4379816A1
公开(公告)日：2024-06-05
申请号：EP23855832.4
申请日：2023-08-28
发明人： CHEN, Hao , XING, Guoqiang
IPC分类号： H01L31/0352 , H01L31/0216 , H01L31/0288 , H01L31/068 , H01L31/18
摘要： The embodiments of the present application relate to the field of solar cells, and provide a solar cell and a preparation method thereof. The solar cell includes: a P-type silicon wafer; a plurality of P-type heavily-doped layers, a front passivation layer, a front anti-reflection layer, and a plurality of front metal gate lines, sequentially disposed on a front surface of the P-type silicon wafer; and a doped oxide layer, a back crystalline silicon layer, a back anti-reflection layer, and a back metal electrode layer, sequentially disposed on a back surface of the P-type silicon wafer. The plurality of P-type heavily-doped layers are disposed in a plurality of regions corresponding to the plurality of front metal gate lines, respectively, and each of the plurality of front metal gate lines sequentially passes through the front passivation layer, and the front anti-reflection layer to form contact with a corresponding one of the plurality of P-type heavily-doped layer. The solar cell of the embodiments of the present application has a simple structure, a short process time, a high production capacity, and a high conversion efficiency.
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公开(公告)号：EP4379815A1
公开(公告)日：2024-06-05
申请号：EP23855830.8
申请日：2023-08-30
发明人： DENG, Mingzhang , XING, Guoqiang
IPC分类号： H01L31/0216 , H01L31/04 , H01L31/18
CPC分类号： Y02P70/50
摘要： The present application provides a solar cell including a crystalline silicon substrate. A doped silicon oxide layer (131), a doped polycrystalline silicon film (132), and a back aluminum oxide film (133) are sequentially disposed on a back side of the crystalline silicon substrate. The doped polycrystalline silicon film (133) has a thickness of 5 nm to 50 nm. A back metal electrode (150) is also provided on the back side of the crystalline silicon substrate. The back metal electrode (150) passes through the back aluminum oxide film (133) to be in contact with the doped polycrystalline silicon film (132).
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公开(公告)号：EP4365964A1
公开(公告)日：2024-05-08
申请号：EP22882333.2
申请日：2022-06-28
发明人： XU, Wenzhou , YAO, Qian , XING, Guoqiang
IPC分类号： H01L31/18 , H01L21/02 , H01L31/0216 , C23C16/34 , C23C16/40 , C23C16/513
CPC分类号： Y02E10/547 , Y02P70/50
摘要： The present disclosure belongs to the technical field of N-type double-sided solar cells. Disclosed is an N-type double-sided solar cell preparation method. The preparation method comprises: sequentially forming a front aluminum oxide passivation layer and a front silicon nitride anti-reflection layer on a front face of an N-type silicon wafer. The front aluminum oxide passivation layer is prepared by using a plasma-enhanced atomic layer deposition method, and the deposition conditions thereof involve: any frequency in the frequency range of 40 kHz to 400 kHz is selected to be a radio-frequency power supply frequency, a gaseous aluminum source is first introduced into a plasma apparatus in a vacuum state, such that a layer of aluminum source molecules is adsorbed on the surface of the silicon wafer, and a gaseous oxygen source is then introduced, such that the oxygen source is ionized into plasma and reacts with the aluminum source to obtain aluminum oxide. An oxygen source is ionized into plasma in a plasma apparatus, and the plasma has relatively high energy and activity, and can be quickly combined with aluminum source molecules which are adsorbed on an N-type silicon wafer, so as to generate an aluminum oxide film, such that the open-circuit voltage and the conversion efficiency of an N-type double-sided solar cell are improved.
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