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公开(公告)号：EP4365966A1
公开(公告)日：2024-05-08
申请号：EP23802428.5
申请日：2023-01-31
发明人： CHEN, Hao , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： Y02P70/50
摘要： The present application provides a bifacial solar cell and a preparation method of the bifacial solar cell, and relates to the field of photovoltaics. The preparation method of the present application utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present application, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of -SiH connected to mono-hydrogen atoms, a lower number of SiH2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.
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公开(公告)号：EP4345920A1
公开(公告)日：2024-04-03
申请号：EP22926777.8
申请日：2022-10-26
发明人： CHEN, Hao , XU, Wenzhou , MENG, Xiajie , YAO, Qian , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216
摘要： A passivated contact battery and a preparation process therefor, which belongs to the field of solar cells. In the preparation process for the passivated contact battery, preparation of a back surface field passivation structure thereof comprises: growing a tunneling oxide layer on a back surface of a silicon wafer; growing an intrinsic silicon carbide layer on a surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on a surface of the intrinsic silicon carbide layer; and performing annealing, so as to cause the silicon carbide and the phosphorus in the phosphorus-doped silicon carbide layer to form covalent bonds. The passivated contact battery can be obtained by means of the described preparation process, and same comprises a silicon wafer as well as a tunneling oxide layer, an intrinsic silicon carbide layer, and a phosphorus-doped silicon carbide layer which are sequentially stacked on a back surface of the silicon wafer. The present preparation process and the battery are able to effectively remedy the problem of serious film bursting of a back surface field passivation structure obtained by PECVD deposition; and silver paste corrosion resistance of the back surface can further be improved, thereby reducing a metal penetration phenomenon and reducing metal compounding.
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公开(公告)号：EP4383350A1
公开(公告)日：2024-06-12
申请号：EP23844159.6
申请日：2023-08-24
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： Y02P70/50
摘要： Embodiments of the present application provide a solar cell and a preparation method thereof, which relates to the field of photovoltaic cell preparation. The solar cell includes: an N-type silicon wafer, where a front surface of the N-type silicon wafer is provided with a doped region containing boron, the doped region is divided into a lightly doped region and a heavily doped region, a boron concentration of the lightly doped region is less than a boron concentration of the heavily doped region, a junction depth of the lightly doped region is less than a junction depth of the heavily doped region; a passivation layer and a first anti-reflection layer that are sequentially stacked on the front surface of the N-type silicon wafer. An area of a surface of the first anti-reflection layer corresponding to the heavily doped region is provided with an electrode. The electrode extends through the first anti-reflection layer and the passivation layer, and is in an ohmic contact with the heavily doped region. The solar cell of the present application can well reduce the contact resistance between the N-type silicon wafer and the electrode, thereby improving cell efficiency.
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公开(公告)号：EP4365960A1
公开(公告)日：2024-05-08
申请号：EP22934773.7
申请日：2022-10-26
发明人： JIANG, Yangxu , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18
摘要： The present application relates to the technical field of photovoltaics, and provides a solar cell and a preparation method thereof. The method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including a first doped region and a second doped region, and a P-type doping concentration of the first doped region being greater than a P-type doping concentration of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The selective emitter and the positive electrode are provided on the front side of the solar cell, the selective emitter includes the first doped region and the second doped region, the P-type doping concentration of the first doped region is greater than the P-type doping concentration of the second doped region, and the positive electrode is in electrical contact with the first doped region. It can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current, such that the solar cell has higher conversion efficiency.
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公开(公告)号：EP4203081A1
公开(公告)日：2023-06-28
申请号：EP22859514.6
申请日：2022-07-26
发明人： XU, Wenzhou , CHEN, Hao , DENG, Mingzhang , HE, Yu , ZHOU, Fan , XING, Guoqiang , YAO, Qian
IPC分类号： H01L31/18 , H01L31/0745
摘要： The present application relates to a TOPCon cell, a method for manufacturing the same, and an electrical device. The method includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150 °C to 200 °C, the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.
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公开(公告)号：EP4318611A1
公开(公告)日：2024-02-07
申请号：EP22913564.5
申请日：2022-09-23
发明人： XU, Wenzhou , MENG, Xiajie , YAO, Qian , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , C23C16/24
摘要： The present application relates to a solar cell panel, a cell piece and a production process for a cell piece. A silicon oxide layer (200) is formed on the back surface of an N-type silicon wafer (100); an N-type silicon layer (300) is formed on the silicon oxide layer (200), wherein the phosphine concentration of the N-type silicon layer (300) is within a first preset concentration range; and an antireflection layer (400) is formed on the N-type silicon layer (300) and a back electrode (500) is formed on the antireflection layer (400). In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.
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7.发明公开
公开(公告)号：EP4254519A1
公开(公告)日：2023-10-04
申请号：EP22897076.0
申请日：2022-05-30
发明人： DENG, Mingzhang , CHEN, Hao , MENG, Xiajie , XING, Guoqiang
IPC分类号： H01L31/20 , H01L31/075
摘要： The present application relates to the technical field of solar cells, and in particular, to a method for preparing a tunnel oxide layer and an amorphous silicon thin film and a TOPCon cell. The method includes sequentially depositing a tunnel oxide layer, an intrinsic amorphous silicon thin film and a doped amorphous silicon thin film at a deposition temperature of 440 °C to 460 °C by using a PECVD device. A flow rate of silane of depositing the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film is in a range of 2000 sccm to 2500 sccm. The film obtained by the above method is dense, and hydrogen atoms are better released during a subsequent annealing process, greatly mitigating the problem of film delamination. By adjusting the flow rate of silane, the growth rate of the thin film can be reduced, such that more hydrogen atoms overflow from the thin film, preventing hydrogen atoms from being stored within the thin film, and therefore effectively reducing the occurrence of film delamination resulting from hydrogen atoms accumulating and forming hydrogen gas in the later annealing process.
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公开(公告)号：EP4411841A1
公开(公告)日：2024-08-07
申请号：EP23855828.2
申请日：2023-11-28
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/06
CPC分类号： Y02P70/50
摘要： The present application relates to a solar cell and a preparation method thereof, which includes: providing a silicon wafer, firstly forming a P-type doped layer and an N-type doped layer on a front side and a backside of the silicon wafer, respectively, then forming a first aluminum oxide passivation layer and a second aluminum oxide passivation layer on surfaces of the P-type doped layer and the N-type doped layer, respectively, then forming a first silicon nitride anti-reflection layer and a second silicon nitride anti-reflection layer on surfaces of the first aluminum oxide passivation layer and the second aluminum oxide passivation layer, respectively, and lastly forming an electrode by a screen printing. The P-type doped layer is obtained by vapor deposition, and a deposition temperature is 400°C to 600°C.
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公开(公告)号：EP4369424A1
公开(公告)日：2024-05-15
申请号：EP23844160.4
申请日：2023-08-24
发明人： YANG, Tanghui , XING, Guoqiang , WANG, Yongjie
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216
摘要： A double-sided solar cell and a preparation method thereof. The preparation method includes: preparing a semi-finished product of the double-sided solar cell, the semi-finished product including a silicon wafer, and a P-type doped layer, a front passivation layer, and a front anti-reflection layer that are sequentially formed on a front surface of the silicon wafer; providing an opening corresponding to a front finger on a front surface of the semi-finished product, the opening extending through the front anti-reflection layer and the front passivation layer in sequence and exposing a surface of the P-type doped layer; and coating a non-fire-through paste in contact with the P-type doped layer through the opening, sintering the paste, to form the front finger. This preparation method can increase the open circuit voltage of the double-sided solar cell, and improve the conversion efficiency of double-sided solar cell.
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公开(公告)号：EP4365965A1
公开(公告)日：2024-05-08
申请号：EP22942530.1
申请日：2022-12-26
发明人： CHEN, Hao , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： Y02P70/50
摘要： The present application provides a solar cell and a preparation method thereof. The method includes: forming a target amorphous silicon layer on a side of a silicon wafer using a preset process, and then performing an annealing treatment on the target amorphous silicon layer to convert the target amorphous silicon layer into a target polycrystalline silicon layer, wherein the preset process includes at least one cycle period, the at least one cycle period comprises: depositing a target amorphous silicon preformed layer with a preset thickness and performing a hydrogen gas plasma treatment on the target amorphous silicon preformed layer, wherein the preset thickness of the target amorphous silicon preformed layer is less than or equal to a thickness of the target amorphous silicon layer. This method can effectively improve a crystallization rate of converting amorphous silicon into polycrystalline silicon, improving field passivation performance and contact performance of the solar cell.
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