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公开(公告)号：EP4318611A1
公开(公告)日：2024-02-07
申请号：EP22913564.5
申请日：2022-09-23
发明人： XU, Wenzhou , MENG, Xiajie , YAO, Qian , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , C23C16/24
摘要： The present application relates to a solar cell panel, a cell piece and a production process for a cell piece. A silicon oxide layer (200) is formed on the back surface of an N-type silicon wafer (100); an N-type silicon layer (300) is formed on the silicon oxide layer (200), wherein the phosphine concentration of the N-type silicon layer (300) is within a first preset concentration range; and an antireflection layer (400) is formed on the N-type silicon layer (300) and a back electrode (500) is formed on the antireflection layer (400). In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.
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公开(公告)号：EP4345920A1
公开(公告)日：2024-04-03
申请号：EP22926777.8
申请日：2022-10-26
发明人： CHEN, Hao , XU, Wenzhou , MENG, Xiajie , YAO, Qian , WANG, Xiupeng , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216
摘要： A passivated contact battery and a preparation process therefor, which belongs to the field of solar cells. In the preparation process for the passivated contact battery, preparation of a back surface field passivation structure thereof comprises: growing a tunneling oxide layer on a back surface of a silicon wafer; growing an intrinsic silicon carbide layer on a surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on a surface of the intrinsic silicon carbide layer; and performing annealing, so as to cause the silicon carbide and the phosphorus in the phosphorus-doped silicon carbide layer to form covalent bonds. The passivated contact battery can be obtained by means of the described preparation process, and same comprises a silicon wafer as well as a tunneling oxide layer, an intrinsic silicon carbide layer, and a phosphorus-doped silicon carbide layer which are sequentially stacked on a back surface of the silicon wafer. The present preparation process and the battery are able to effectively remedy the problem of serious film bursting of a back surface field passivation structure obtained by PECVD deposition; and silver paste corrosion resistance of the back surface can further be improved, thereby reducing a metal penetration phenomenon and reducing metal compounding.
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公开(公告)号：EP4383350A1
公开(公告)日：2024-06-12
申请号：EP23844159.6
申请日：2023-08-24
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： Y02P70/50
摘要： Embodiments of the present application provide a solar cell and a preparation method thereof, which relates to the field of photovoltaic cell preparation. The solar cell includes: an N-type silicon wafer, where a front surface of the N-type silicon wafer is provided with a doped region containing boron, the doped region is divided into a lightly doped region and a heavily doped region, a boron concentration of the lightly doped region is less than a boron concentration of the heavily doped region, a junction depth of the lightly doped region is less than a junction depth of the heavily doped region; a passivation layer and a first anti-reflection layer that are sequentially stacked on the front surface of the N-type silicon wafer. An area of a surface of the first anti-reflection layer corresponding to the heavily doped region is provided with an electrode. The electrode extends through the first anti-reflection layer and the passivation layer, and is in an ohmic contact with the heavily doped region. The solar cell of the present application can well reduce the contact resistance between the N-type silicon wafer and the electrode, thereby improving cell efficiency.
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公开(公告)号：EP4203081A1
公开(公告)日：2023-06-28
申请号：EP22859514.6
申请日：2022-07-26
发明人： XU, Wenzhou , CHEN, Hao , DENG, Mingzhang , HE, Yu , ZHOU, Fan , XING, Guoqiang , YAO, Qian
IPC分类号： H01L31/18 , H01L31/0745
摘要： The present application relates to a TOPCon cell, a method for manufacturing the same, and an electrical device. The method includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150 °C to 200 °C, the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.
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公开(公告)号：EP4411841A1
公开(公告)日：2024-08-07
申请号：EP23855828.2
申请日：2023-11-28
发明人： XU, Wenzhou , XING, Guoqiang
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/06
CPC分类号： Y02P70/50
摘要： The present application relates to a solar cell and a preparation method thereof, which includes: providing a silicon wafer, firstly forming a P-type doped layer and an N-type doped layer on a front side and a backside of the silicon wafer, respectively, then forming a first aluminum oxide passivation layer and a second aluminum oxide passivation layer on surfaces of the P-type doped layer and the N-type doped layer, respectively, then forming a first silicon nitride anti-reflection layer and a second silicon nitride anti-reflection layer on surfaces of the first aluminum oxide passivation layer and the second aluminum oxide passivation layer, respectively, and lastly forming an electrode by a screen printing. The P-type doped layer is obtained by vapor deposition, and a deposition temperature is 400°C to 600°C.
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6.发明公开
公开(公告)号：EP4254517A1
公开(公告)日：2023-10-04
申请号：EP22908852.1
申请日：2022-07-27
发明人： ZHANG, Ming , MENG, Xiajie , XU, Wenzhou , CHEN, Hao , DENG, Mingzhang , XING, Guoqiang , YAO, Qian
IPC分类号： H01L31/18 , H01L21/02 , H01L31/0216 , H01L31/068 , C23C16/40
摘要： A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided, which are relate to the field of crystalline silicon solar cells. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer. A SiO x layer obtained by the above method can be continuous and dense, and have a fast growth rate, an excellent impurity absorption effect and an excellent blocking effect. Moreover, a thickness of the SiO x layer can be accurate and controllable, and the SiO x layer has pinholes with a high density and a large size after high temperature annealing.
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公开(公告)号：EP4365964A1
公开(公告)日：2024-05-08
申请号：EP22882333.2
申请日：2022-06-28
发明人： XU, Wenzhou , YAO, Qian , XING, Guoqiang
IPC分类号： H01L31/18 , H01L21/02 , H01L31/0216 , C23C16/34 , C23C16/40 , C23C16/513
CPC分类号： Y02E10/547 , Y02P70/50
摘要： The present disclosure belongs to the technical field of N-type double-sided solar cells. Disclosed is an N-type double-sided solar cell preparation method. The preparation method comprises: sequentially forming a front aluminum oxide passivation layer and a front silicon nitride anti-reflection layer on a front face of an N-type silicon wafer. The front aluminum oxide passivation layer is prepared by using a plasma-enhanced atomic layer deposition method, and the deposition conditions thereof involve: any frequency in the frequency range of 40 kHz to 400 kHz is selected to be a radio-frequency power supply frequency, a gaseous aluminum source is first introduced into a plasma apparatus in a vacuum state, such that a layer of aluminum source molecules is adsorbed on the surface of the silicon wafer, and a gaseous oxygen source is then introduced, such that the oxygen source is ionized into plasma and reacts with the aluminum source to obtain aluminum oxide. An oxygen source is ionized into plasma in a plasma apparatus, and the plasma has relatively high energy and activity, and can be quickly combined with aluminum source molecules which are adsorbed on an N-type silicon wafer, so as to generate an aluminum oxide film, such that the open-circuit voltage and the conversion efficiency of an N-type double-sided solar cell are improved.
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公开(公告)号：EP4254513A1
公开(公告)日：2023-10-04
申请号：EP22885093.9
申请日：2022-05-30
发明人： DENG, Mingzhang , XU, Wenzhou , HE, Yu , CHEN, Hao , ZHOU, Fan , MENG, Xiajie , ZHOU, Pengyu , YAO, Qian , XING, Guoqiang
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/0352 , H01L31/02 , H01L31/068
摘要： The present application provides a solar cell and a preparation method therefor and belongs to the technical field of photovoltaics. In a solar cell, the back surface of a substrate thereof is provided with alternately distributed emitter zones and back surface field zones. An emitter is formed in each emitter zone, and the emitters are made of boron-doped monocrystalline silicon. A back surface field is formed in each back surface field zone; the back surface fields comprise tunneling oxide layers and polycrystalline silicon layers in stacked distribution, the polycrystalline silicon layers being made of phosphorus-doped polycrystalline silicon, and the tunneling oxide layers being located between a polycrystalline silicon layer and a polycrystalline silicon layer. Positive electrodes of the solar cell are electrically connected to the emitters, and negative electrodes of the solar cell are electrically connected to the back surface fields. The preparation method for a solar cell is used for preparing a solar cell having the described structure. In the described solar cell, the light-receiving area of the front surface can be expanded and the recombination rate of electron-hole pairs can be reduced, thereby effectively improving the photoelectric conversion efficiency of the solar cell.
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