VERFAHREN ZUR HERSTELLUNG EINER HALBEITERSCHALTUNG UND NACH DIESEM VERFAHREN HERGESTELLTE HALBLEITERSCHALTUNGEN

    公开(公告)号:EP1382072A2

    公开(公告)日:2004-01-21

    申请号:EP02735234.3

    申请日:2002-04-08

    发明人: BRENDEL, Rolf

    IPC分类号: H01L31/18

    摘要: A method for producing a semiconductor circuit with several interconnected active and/or passive elements on a substrate having at least one p area and one n area, characterized by the following steps: a) at least one p conducting layered area or an n conducting layered area is produced and another area made of an n conducting or p conducting material is produced thereon; b) metal contacts are applied to the bare surface of the other area, optionally after the structuring of the thus produced structure, according to a selected pattern; c) the surface of the thus produced structure provided with metal contacts is applied to an auxiliary substrate by means of an adhesive; and d) other metal contacts are applied to the thus produced structure on the side of the former substrate after removal of areas of the structure as far as the former metal contacts, according to another selected pattern.