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公开(公告)号：EP1032951B1
公开(公告)日：2003-02-26
申请号：EP98965583.2
申请日：1998-11-18
申请人： SIEMENS AKTIENGESELLSCHAFT , Bayerisches Zentrum für Angewandte Energieforschung e.V. ZAE Bayern
IPC分类号： H01M4/96 , C04B38/00 , C04B35/524
CPC分类号： H01M4/96 , C04B38/0022 , Y10T428/249953 , Y10T428/31728 , Y10T428/31786 , C04B35/52 , C04B38/0045
摘要： The invention relates to thin, flat, porous gas diffusion electrodes comprised of carbon which have a smooth surface and whose porosity can be adjusted according to choice. The inventive electrodes are obtained by pyrolysis of a composite out of an organic aerogel or xerogel and a reinforcing skeleton which is completely or partially comprised of organic material.
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公开(公告)号：EP1032951A1
公开(公告)日：2000-09-06
申请号：EP98965583.2
申请日：1998-11-18
申请人： SIEMENS AKTIENGESELLSCHAFT , Bayerisches Zentrum für Angewandte Energieforschung e.V. ZAE Bayern
IPC分类号： H01M4/96 , C04B38/00 , C04B35/524
CPC分类号： H01M4/96 , C04B38/0022 , Y10T428/249953 , Y10T428/31728 , Y10T428/31786 , C04B35/52 , C04B38/0045
摘要： The invention relates to thin, flat, porous gas diffusion electrodes comprised of carbon which have a smooth surface and whose porosity can be adjusted according to choice. The inventive electrodes are obtained by pyrolysis of a composite out of an organic aerogel or xerogel and a reinforcing skeleton which is completely or partially comprised of organic material.
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公开(公告)号：EP1008199A1
公开(公告)日：2000-06-14
申请号：EP98961071.2
申请日：1998-11-06
CPC分类号： C04B38/0022 , H01M4/86 , Y10T428/249953 , Y10T428/249961 , Y10T428/249962 , Y10T428/249965 , Y10T428/249994 , Y10T428/31761
摘要： The invention relates to thin, flat, porous gas diffusion electrodes made of carbon and provided with a smooth surface. The porosity of said electrodes can be adjusted as desired. The inventive electrodes are obtained by pyrolysis of a composite containing an organic polymer with a three-dimensional globular structure (RGS polymer) and a reinforcing skeleton that is fully or partially made of organic material.
摘要翻译： 本发明涉及由碳制成并具有光滑表面的薄的，平坦的多孔气体扩散电极。 所述电极的孔隙率可以根据需要进行调整。 本发明的电极通过热解含有有机聚合物与三维球状结构（RGS聚合物）和全部或部分由有机材料制成的增强骨架的复合材料而获得。
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公开(公告)号：EP1129502B1
公开(公告)日：2003-03-19
申请号：EP99955736.6
申请日：1999-09-17
CPC分类号： H01M8/1004 , H01M8/04156 , H01M8/04291 , H01M2300/0082
摘要： When withdrawing reaction water in polymer electrolyte membrane fuel cells, it is unnecessary to humidify the reaction gases or to increase the gas pressure if a hydrophobic layer is used on the cathode side. Said hydrophobic layer comprises a smaller pore size than the layer located on the anode side. The reaction water is then removed via the anode.
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公开(公告)号：EP1129502A2
公开(公告)日：2001-09-05
申请号：EP99955736.6
申请日：1999-09-17
CPC分类号： H01M8/1004 , H01M8/04156 , H01M8/04291 , H01M2300/0082
摘要： When withdrawing reaction water in polymer electrolyte membrane fuel cells, it is unnecessary to humidify the reaction gases or to increase the gas pressure if a hydrophobic layer is used on the cathode side. Said hydrophobic layer comprises a smaller pore size than the layer located on the anode side. The reaction water is then removed via the anode.
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公开(公告)号：EP0781424B1
公开(公告)日：1998-11-18
申请号：EP95929739.1
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/022 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated imagewise, heated at a temperature between 120 and 150 DEG C for 100 to 600 s and wet-developed (single-layer resist system). The invention also concerns a method in which an analogous two-layer resist system is used.
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公开(公告)号：EP0808481A1
公开(公告)日：1997-11-26
申请号：EP96900861.0
申请日：1996-01-29
CPC分类号： G03F7/094 , G01Q80/00 , G03F7/2049 , G03F7/265 , Y10S430/143 , Y10S977/859
摘要： The invention concerns a process for the photolithographic generation of structures in the sub-200-nm region, wherein a layer of amorphous hydrogenous carbon (a-C:H) with an optical band gap of less than 1 eV or a layer of sputtered amorphous carbon (a-C) is applied as bottom resist to a substrate (layer thickness: ≤ 500 nm). The bottom resist is provided with a layer of an electron beam-sensitive silicon-containing or silylatable photoresist as the top resist (layer thickness: ≤ 50 nm); the top resist is structured by means of scanning tunneling microscopy (STM) or scanning force microscopy (SFM) with electrons of a force of ≤ 80 eV. The structure is then imparted by etching with an anisotropic oxygen plasma to the bottom resist and then to the substrate by plasma etching.
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公开(公告)号：EP0808481B1
公开(公告)日：1999-06-02
申请号：EP96900861.4
申请日：1996-01-29
CPC分类号： G03F7/094 , G01Q80/00 , G03F7/2049 , G03F7/265 , Y10S430/143 , Y10S977/859
摘要： The invention concerns a process for the photolithographic generation of structures in the sub-200-nm region, wherein a layer of amorphous hydrogenous carbon (a-C:H) with an optical band gap of less than 1 eV or a layer of sputtered amorphous carbon (a-C) is applied as bottom resist to a substrate (layer thickness: ≤ 500 nm). The bottom resist is provided with a layer of an electron beam-sensitive silicon-containing or silylatable photoresist as the top resist (layer thickness: ≤ 50 nm); the top resist is structured by means of scanning tunneling microscopy (STM) or scanning force microscopy (SFM) with electrons of a force of ≤ 80 eV. The structure is then imparted by etching with an anisotropic oxygen plasma to the bottom resist and then to the substrate by plasma etching.
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公开(公告)号：EP0797792B1
公开(公告)日：1998-11-18
申请号：EP95929737.5
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/265 , G03F7/0226 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive-resist layer consisting of a polymer containing carboxylic acid anhydride groups and tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic or aliphatic-aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated in accordance with the circuit drawing and heated at a temperature between 120 and 150 DEG C for 100 to 600 s, after which the photoresist layer is subjected to liquid silylation and dry-developed in an anisotropic oxygen plasma.
摘要翻译： 本发明涉及一种通过在基底上涂覆由含有羧酸酐基团和叔丁基酯或叔丁氧基羰氧基团的聚合物组成的光敏抗蚀剂层，光敏组分（在 萘醌二叠氮化物-4-磺酸与芳族或脂族 - 芳族羟基化合物的酯的形式）和合适的溶剂。 然后干燥光刻胶，根据电路图进行照明，并在120-150℃的温度下加热100-600秒，然后将光刻胶层进行液体甲硅烷基化并在各向异性氧等离子体中干显影。
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公开(公告)号：EP0781424A1
公开(公告)日：1997-07-02
申请号：EP95929739.0
申请日：1995-09-01
发明人： SEZI, Recai , LEUSCHNER, Rainer , SCHMIDT, Erwin
CPC分类号： G03F7/022 , G03F7/0233 , Y10S430/12
摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert.-butyl ester or tert.-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulphonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, illuminated imagewise, heated at a temperature between 120 and 150 °C for 100 to 600 s and wet-developed (single-layer resist system). The invention also concerns a method in which an analogous two-layer resist system is used.
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