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公开(公告)号：EP4421853A1
公开(公告)日：2024-08-28
申请号：EP22882729.1
申请日：2022-10-13
发明人： CHI, Wenkai , WANG, Yongfei
IPC分类号： H01L21/67 , H01L21/677 , H01L21/683
摘要： The present disclosure provides a processing chamber applied to semiconductor processing equipment, including a transfer chamber and a plurality of reaction chambers above the transfer chamber. The plurality of reaction chambers are all communicatively connected to the transfer chamber through bottom openings. A plurality of bases can ascend and descend between the reaction chambers and the transfer chamber. The processing chamber further includes a transfer mechanism and a carrier mechanism arranged in the transfer chamber. The transfer mechanism is configured to transfer wafers from outside the processing chamber to the carrier mechanism or onto the plurality of bases, and to transfer the wafers on the plurality of bases out of the processing chamber. The carrier mechanism is configured to carry the plurality of wafers and can transfer the plurality of wafers carried by the carrier mechanism onto the plurality of bases. In the present disclosure, the transfer mechanism can first transfer a next batch of wafers onto the carrier mechanism, and the carrier mechanism transfers the wafers carried by the carrier mechanism onto the bases after the semiconductor processing is completed, which saves wafer transfer time. The present disclosure also provides the semiconductor processing equipment and a semiconductor processing method.
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公开(公告)号：EP4369360A1
公开(公告)日：2024-05-15
申请号：EP22836948.4
申请日：2022-07-06
发明人： XU, Jinji , MAO, Xingfei
IPC分类号： H01F5/00 , H01L21/3065 , H05H1/46
CPC分类号： H05H1/46 , H01L21/3065 , H01F5/00
摘要： The present disclosure provides a coil device for generating plasma in semiconductor process equipment and the semiconductor process equipment. The device includes a coil structure and a fixed cooling assembly for fixing and cooling the coil structure. The fixed cooling assembly includes a fixed body made of insulation material. A cooling space is formed in the fixed body. The coil structure is fixedly arranged in the cooling space. An inlet opening and an outlet opening communicating with the cooling space are arranged at the fixed body. The inlet opening is configured to transfer the cooling gas into the cooling space. The outlet opening is configured to exhaust the cooling gas out of the cooling space. A turbulence structure is further arranged in the cooling space and is configured to change a gas flow direction in the cooling space to improve uniformity of the gas distribution in the cooling space. The coil device and the semiconductor process equipment of the present disclosure can be configured to improve cooling efficiency and the cooling uniformity for the coil and reduce the oxidation speed of the coil. Thus, the application lifetime of the coil can be extended.
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3.发明公开
公开(公告)号：EP4249633A1
公开(公告)日：2023-09-27
申请号：EP21893925.4
申请日：2021-11-17
发明人： QIN, Haifeng , LAN, Yunfeng , SHI, Shuaitao , WANG, Huanyu , ZHANG, Fang , ZHANG, Wenqiang
IPC分类号： C23C16/52 , C23C16/505 , C23C16/40 , C23C16/455
摘要： The present disclosure provides a reaction chamber of a semiconductor process device, the semiconductor process device and a film layer deposition method. The reaction chamber includes: a chamber body, a monitoring module, a deposition module and a control module; wherein the deposition module is configured to execute multiple deposition steps within a deposition period in the chamber body; the monitoring module is connected with the chamber body, and configured to monitor brightness of a plasma light source generated in the chamber body when the deposition module executes each deposition step, and generate a first signal according to the brightness of the plasma light source; and the control module is connected with the monitoring module, and configured to judge whether a thickness of a target film layer obtained after executing the multiple deposition steps is abnormal according to the first signal corresponding to at least one of the deposition steps, and if yes, execute an abnormality processing flow. By the adoption of the present disclosure, a deviation between the thickness of the target film layer and a target thickness can be improved.
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公开(公告)号：EP4199039A1
公开(公告)日：2023-06-21
申请号：EP21855345.1
申请日：2021-07-26
发明人： WU, Fangna , SHI, Sixue
摘要： The present disclosure provides a processing task start method and device in a semiconductor processing apparatus. The method includes generating a processing area relationship list of a current processing task of the semiconductor processing apparatus; determining all to-be-started processing tasks and generating a processing area relationship list for each of the to-be-started processing tasks, based on the processing area relationship list of the current processing task and the processing area relationship list of each of the to-be-started processing task, determining whether all the to-be-started processing tasks include a startable processing task according to a first predetermined rule, when all the to-be-started processing tasks include a startable processing task, selecting a target startable processing task from all startable processing tasks according to a second predetermined rule, and starting the target startable processing task. Therefore, at any time, specified materials of the target startable processing task and the current processing task will not appear in the two same processing areas and in the opposite sequence to avoid deadlock and improve production efficiency.
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公开(公告)号：EP4135477A1
公开(公告)日：2023-02-15
申请号：EP21785131.0
申请日：2021-04-01
发明人： LI, Bing
摘要： The present disclosure discloses a heating device in a semiconductor apparatus and the semiconductor apparatus, including a heating body configured to carry a wafer, a heating member configured to generate heat being arranged in the heating body; and a cooling structure, which is arranged on the heating body below, and a cooling structure being arranged below the heating body. The cooling structure is configured to perform heat exchange with the heating body selectively at different positions away from the heating body. The heating device in the semiconductor apparatus and the semiconductor apparatus of the present disclosure are configured to expand an application temperature range of the heating device to satisfy different temperature requirements.
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公开(公告)号：EP3770947A1
公开(公告)日：2021-01-27
申请号：EP18910945.7
申请日：2018-11-28
发明人： LIU, Jiansheng , LI, Liang , JIANG, Xinxian , CHEN, Peng , WEN, Lihui
IPC分类号： H01L21/02
摘要： The present disclosure provides a power feeding mechanism, a rotary base device, and semiconductor processing equipment. The power feeding mechanism is used for feeding output power of a power source into a rotating component, and includes: a conductive stationary member electrically connected with the power source; a conductive rotating member, which is electrically connected with the rotating component and synchronously rotates with the rotating component; and a conductive connecting structure, which is in electrical contact with the conductive stationary member and the conductive rotating member separately, without affecting rotation of the conductive rotating member. The power feeding mechanism provided by the present disclosure may not only improve the power transmission efficiency, but also avoid the risk of ignition in the prior art.
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7.发明公开
公开(公告)号：EP4428780A1
公开(公告)日：2024-09-11
申请号：EP22889195.8
申请日：2022-10-28
发明人： LIN, Yuanwei
摘要： A semiconductor process recipe automatic acquisition method and system and semiconductor process equipment. The method includes randomly inputting a process parameter set into a constructed deep neural network model, determining whether a difference degree between a process result evaluation index output by the deep neural network model and a corresponding set process requirement meets a set requirement, if yes, using the process parameter set as a process recipe for an actual process, and otherwise, using a gradient algorithm to adjust the process parameters input into the deep neural network model, obtaining, based on a self-consistent iterative method, a process parameter set that makes all process result evaluation indices output by the deep neural network model satisfy the correspondingly set process requirements, and using the process parameter set as the process recipe for the actual process. The corresponding process recipe is automatically obtained according to the provided process requirements, and the acquisition efficiency of the process recipe is improved.
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8.发明公开
公开(公告)号：EP4394092A1
公开(公告)日：2024-07-03
申请号：EP22860422.9
申请日：2022-08-22
发明人： JIA, Yan , GENG, Dan , CHEN, Zhimin
摘要： The present disclosure provides a semiconductor heat treatment device and a method of controlling a pressure in a process chamber thereof, which involves the technical field of semiconductor processing technology. The control method includes: obtaining an actual pressure value in the process chamber; determining a first valve opening value for controlling opening an exhaust valve according to a difference between the actual pressure value and a preset target pressure value; determining a first valve opening change value according to the first valve opening value and a current valve opening value; determining whether the first valve opening change value is within a preset fluctuation range of a valve opening change value corresponding to a current process stage; and in response to the first valve opening change value being within the fluctuation range, adjusting opening of an exhaust valve according to the first valve opening value. The control method solves the problem of substantial pressure fluctuation in the process chamber of the semiconductor heat treatment device.
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公开(公告)号：EP4383322A1
公开(公告)日：2024-06-12
申请号：EP22852147.2
申请日：2022-08-02
发明人： ZHAO, Hongyu , LI, Aibing , WANG, Ruiting
摘要： The present disclosure provides a wafer chuck in semiconductor cleaning equipment, including a chuck base, a jetting assembly arranged on the chuck base, and a plurality of wafer lifting shafts arranged on the chuck base. The chuck base includes a carrier surface for supporting the wafer. The gas outlet of the jetting assembly is located in the center area of the carrier surface and configured to jet gas between the carrier surface and the wafer. The plurality of wafer lifting shafts are distributed around the gas outlet of the jetting assembly along the circumference of the carrier surface. Each wafer lifting shaft of the plurality of wafer lifting shafts is movable relative to the chuck base, and each wafer lifting shaft includes an inclined platform. The inclined platform includes an inclined extension surface. The inclined extension surface is configured to carry the wafer at the edge of the wafer and is configured to cause the wafer to move to different height positions along the inclined extension surface when the wafer lifting shaft moves relative to the chuck base. In the present disclosure, the wafer height can be accurately positioned, and the wafer cleaning efficiency can be improved. The present disclosure further provides wafer cleaning equipment and a wafer cleaning method.
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公开(公告)号：EP4379088A1
公开(公告)日：2024-06-05
申请号：EP22848360.8
申请日：2022-07-20
发明人： ZHANG, Chao
摘要： The present disclosure provides a base bias adjustment apparatus and method, and a semiconductor process device. The base bias adjustment apparatus includes: a positive bias adjustment unit; a negative bias adjustment unit; and an anti-interference unit. A first terminal of the positive bias adjustment unit is grounded, and a second terminal of the positive bias adjustment unit is electrically connected to a base for adjusting a bias voltage of the base to have a positive bias voltage at the base. A first terminal of the negative bias adjustment unit is grounded, and a second terminal of the negative bias adjustment unit is electrically connected to the base through the anti-interference unit for adjusting the bias voltage of the base to have a negative bias voltage at the base. The anti-interference unit is electrically connected between the negative bias adjustment unit and the base for suppressing a current from a circuit between the positive bias adjustment unit and the base from flowing into a circuit between the negative bias adjustment unit and the base, thereby facilitating simultaneous operation of the positive bias adjustment unit and the negative bias adjustment unit in a process. The technical solution of the present disclosure meets different process needs, thereby expanding a process window.
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