METHOD FOR FORMING CARBON NANOTUBES
    2.
    发明公开
    METHOD FOR FORMING CARBON NANOTUBES 审中-公开
    工艺制造碳纳米管

    公开(公告)号:EP1563122A2

    公开(公告)日:2005-08-17

    申请号:EP03789997.8

    申请日:2003-11-21

    IPC分类号: C30B29/04 C30B29/06

    摘要: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-­treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth stop to the post treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

    METHOD FOR FORMING CARBON NANOTUBES
    3.
    发明公开
    METHOD FOR FORMING CARBON NANOTUBES 审中-公开
    形成碳纳米管的方法

    公开(公告)号:EP1563121A2

    公开(公告)日:2005-08-17

    申请号:EP03789929.1

    申请日:2003-11-21

    IPC分类号: C30B23/00

    摘要: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

    摘要翻译: 使用等离子体化学沉积工艺在衬底的表面上形成碳纳米管。 - 纳米管生长后,在新形成的纳米管结构上进行纯化步骤。 纯化从生长的纳米管壁去除石墨和其他碳颗粒并控制纳米管层的厚度。 在相同的基底温度下用等离子体进行纯化。 为了净化,将用作等离子体化学沉积的源气体作为添加剂添加的含氢气体用作等离子体源气体。 因为用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中,所生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应而被净化。 这消除了清洗和排空等离子体处理室以及使用净化等离子体源气体稳定压力的需要。 因此,可以执行生长和纯化而不关闭等离子体处理室中的等离子体。

    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY
    4.
    发明公开
    BARRIER METAL LAYER FOR A CARBON NANOTUBE FLAT PANEL DISPLAY 审中-公开
    势垒金属层适用于由碳纳米管,平板显示器

    公开(公告)号:EP1547114A2

    公开(公告)日:2005-06-29

    申请号:EP03815183.3

    申请日:2003-08-20

    IPC分类号: H01J1/05

    摘要: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.