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公开(公告)号：EP3857910A1
公开(公告)日：2021-08-04
申请号：EP19899799.1
申请日：2019-12-17
发明人： KIM, Sungjoo , AHN, Hoseon , KIM, Jongbae , KIM, Namkeun , KIM, Jihoon , PARK, Dongkyu , LIM, Suntaek
IPC分类号： H04R1/28
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公开(公告)号：EP4389930A3
公开(公告)日：2024-08-14
申请号：EP23216580.3
申请日：2023-12-14
发明人： CHO, Eunhyoung , LEE, Sunghee , LEE, Jeongyub , LEE, Hanboram
CPC分类号： H01L21/28562 , H01L21/0228 , H01L21/76831 , C23C16/04 , C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553 , C23C16/0272 , C23C16/56 , H01L21/76849 , H01L21/76861 , H01L21/76879 , H01L21/76843
摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
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公开(公告)号：EP4331361A1
公开(公告)日：2024-03-06
申请号：EP22796179.4
申请日：2022-04-28
发明人： CHA, Jae Min , KANG, Wu Young , KIM, Eun Hee , SHIN, Eun Kyoung , BAN, Jae Bok
摘要： The present invention relates to a composition, for freeze-dry protecting extracellular vesicles, capable of preserving the function and characteristics of extracellular vesicles, and an extracellular vesicle freeze-drying method using same. Trehalose and sucrose of the present invention are added to an extracellular vesicle freeze-drying process to solve the problems of crystal growth and redissolution capacity degradation, which are problems in an existing freeze-dry protective agent, and also maintain the unique marker, functional factor expressions and therapeutic effects of the extracellular vesicles, and thus may be variously utilized for producing various therapeutic agents using extracellular vesicles.
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公开(公告)号：EP4074697A2
公开(公告)日：2022-10-19
申请号：EP20895884.3
申请日：2020-12-02
申请人： Samjin Pharmaceutical Co., Ltd. , Incheon National University Research & Business Foundation , BAMICHEM CO., LTD
发明人： KI, Min Hyo , KWON, Ho Seok , LEE, Young Hun , SONG, Eunsun , PARK, Yong Bin , LEE, Kug Hwa , CHO, Hyoung Min , AHN, Soon Kil , HONG, Sung Pyo , KIM, Sung Hye
IPC分类号： C07D239/48 , A61K31/505 , A61K31/506 , C07D401/12 , C07D403/12 , A61P35/00
摘要： The present invention provides novel adamantane derivatives as inhibitors of a focal adhesion kinase, pharmaceutically acceptable salts thereof, stereoisomers thereof, hydrates or solvates thereof, and a pharmaceutical composition comprising same.
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公开(公告)号：EP4389930A2
公开(公告)日：2024-06-26
申请号：EP23216580.3
申请日：2023-12-14
发明人： CHO, Eunhyoung , LEE, Sunghee , LEE, Jeongyub , LEE, Hanboram
CPC分类号： H01L21/28562 , H01L21/0228 , H01L21/76831 , C23C16/04 , C23C16/18 , C23C16/34 , C23C16/45534 , C23C16/45553 , C23C16/0272 , C23C16/56
摘要： A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
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公开(公告)号：EP3926071A1
公开(公告)日：2021-12-22
申请号：EP21176278.6
申请日：2021-05-27
IPC分类号： C23C16/04 , C23C16/40 , C23C16/455 , C23C16/56
摘要： A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.
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