公开(公告)号：EP2027058A2

公开(公告)日：2009-02-25

申请号：EP07733870.5

申请日：2007-06-13

申请人： Mta Müszaki Fizikai És Anyagtudományi Kutatóintéze

发明人： ÁDÁM, Antalné ,  BÁRSONY, István ,  DÜCSÖ, Csaba ,  ERÖS, Magdolna ,  MOHÁCSY, Tibor ,  PAYER, Károlyné ,  VÁZSONYI, Éva

IPC分类号： B81C1/00 ,  G06K9/00 ,  G01L5/22

CPC分类号： B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

摘要： The invention relates to a process for fabricating a monocrystalline silicon micromechanical element integrated with a CMOS circuit element within the CMOS technology. A portion of the surface layer of a monocrystalline substrate is selectively doped and a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology. Then, parts of the substrate underlying the selectively doped portion are etched porous through an exposed portion of the surface. Thereby, a buried sacrificial layer is formed. As a next step, metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.