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    CMOS AND PRESSURE SENSOR INTEGRATED ON A CHIP AND FABRICATION METHOD
    1.
    发明公开
    CMOS AND PRESSURE SENSOR INTEGRATED ON A CHIP AND FABRICATION METHOD 审中-公开
    集成在芯片上的CMOS和压力传感器及其制造方法

    公开(公告)号：EP3299787A1

    公开(公告)日：2018-03-28

    申请号：EP17181988.1

    申请日：2017-07-18

    申请人： NXP USA, Inc.

    发明人： LIU, Lianjun ,  BOSE, Amitava

    IPC分类号： G01L9/00 ,  B81C1/00

    CPC分类号： B81B3/0027 ,  B81B2201/0264 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2203/0714 ,  B81C2203/075 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0052 ,  G01L9/0054

    摘要： A device comprises a silicon-on-insulator (SOI) substrate having first and second silicon layers with an insulator layer interposed between them. A structural layer, having a first conductivity type, is formed on the first silicon layer. A well region, having a second conductivity type opposite from the first conductivity type, is formed in the structural layer, and resistors are diffused in the well region. A metallization structure is formed over the well region and the resistors. A first cavity extends through the metallization structure overlying the well region and a second cavity extends through the second silicon layer, with the second cavity stopping at one of the first silicon layer and the insulator layer. The well region interposed between the first and second cavities defines a diaphragm of a pressure sensor. An integrated circuit and the pressure sensor can be fabricated concurrently on the SOI substrate using a CMOS fabrication process.

    摘要翻译： 一种器件包括具有第一和第二硅层的绝缘体上硅（SOI）衬底，绝缘体层插入它们之间。 具有第一导电类型的结构层形成在第一硅层上。 具有与第一导电类型相反的第二导电类型的阱区域形成在结构层中，并且电阻器在阱区域中扩散。 在阱区和电阻器上形成金属化结构。 第一腔体延伸穿过覆盖阱区域的金属化结构，并且第二腔体延伸穿过第二硅层，第二腔体在第一硅层和绝缘体层中的一个处停止。 介于第一腔和第二腔之间的井区域限定压力传感器的隔膜。 可以使用CMOS制造工艺在SOI衬底上同时制造集成电路和压力传感器。

    MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER
    4.
    发明公开
    MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER 审中-公开
    AKUSTISCHER MEMS-WANDLER MITSILICIUMNITRIDRÜCKPLATTEUND SILICIUMOPFERSCHICHT

    公开(公告)号：EP2969911A4

    公开(公告)日：2016-11-02

    申请号：EP14775941

    申请日：2014-03-12

    申请人： BOSCH GMBH ROBERT

    发明人： FEYH ANDO ,  GRAHAM ANDREW

    IPC分类号： H04R19/04 ,  B81B7/02 ,  B81C1/00 ,  H04R31/00

    CPC分类号： H04R19/04 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2203/0714 ,  H04R19/005 ,  H04R31/00

    摘要： A microelectromechanical system (MEMS) microphone has a substrate including a backside trench, and a flexible membrane deposited on the substrate extending over the backside trench. The flexible membrane includes a first electrode. A silicon spacer layer is deposited on a perimeter portion of the flexible membrane. The spacer layer defines an acoustic chamber above the membrane and the backside trench. A silicon rich silicon nitride (SiN) backplate layer is deposited on top of the silicon spacer layer extending over the acoustic chamber. The backplate defines a plurality of opening into the acoustic chamber and includes a metallization that serves as a second electrode.

    摘要翻译： 微机电系统（MEMS）麦克风具有包括背面沟槽的衬底和沉积在衬底上的柔性膜，该衬底延伸在背面沟槽上。 柔性膜包括第一电极。 硅间隔层沉积在柔性膜的周边部分上。 间隔层限定了膜上方的声室和背面沟槽。 富硅氮化物（SiN）背板层沉积在在隔音室上延伸的硅间隔层的顶部上。 背板限定了进入声室的多个开口，并且包括用作第二电极的金属化。

    MONOLITHIC CMOS-MEMS MICROPHONES AND METHOD OF MANUFACTURING
    5.
    发明公开
    MONOLITHIC CMOS-MEMS MICROPHONES AND METHOD OF MANUFACTURING 审中-公开
    MONLITHISCHE CMOS-MEMS-MIKROFONE UND VERFAHREN ZUR HERSTELLUNG

    公开(公告)号：EP2991926A1

    公开(公告)日：2016-03-09

    申请号：EP14727144.9

    申请日：2014-05-02

    申请人： Robert Bosch GmbH

    发明人： ZINN, John ,  DIAMOND, Brett ,  HOFFMANN, Jochen

    IPC分类号： B81C1/00

    CPC分类号： B81C1/00246 ,  B81B2201/0257 ,  B81C2201/0132 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003

    摘要： Systems and methods are disclosed for manufacturing a CMOS-MEMS device (100). A partial protective layer (401) is deposited on a top surface of a layered structure to cover a circuit region. A first partial etch is performed from the bottom side of the layered structure to form a first gap (501) below a MEMS membrane (207) within a MEMS region of the layered structure. A second partial etch is performed from the top side of the layered structure to remove a portion of a sacrificial layer between the MEMS membrane and a MEMS backplate (215) within the MEMS region. The second partial etch releases the MEMS membrane so that it can move in response to pressures. The deposited partial protective layer prevents the second partial etch from etching a portion of the sacrificial layer positioned within the circuit region of the layered structure and also prevents the second partial etch from damaging the CMOS circuit component (211).

    摘要翻译： 公开了用于制造CMOS-MEMS器件的系统和方法。 部分保护层沉积在层叠的顶表面上以覆盖逻辑区域。 从分层结构的底侧执行第一部分蚀刻，以在分层结构的MEMS区域内的MEMS膜下方形成第一间隙。 从分层结构的顶侧执行第二部分蚀刻以去除MEMS区域内的MEMS膜和MEMS背板之间的牺牲层的一部分。 第二部分蚀刻释放MEMS膜，使得其可以响应于压力移动。 沉积的部分保护层防止第二部分蚀刻蚀刻位于层状结构的逻辑区域内的牺牲层的一部分，并且还防止第二部分蚀刻损坏CMOS逻辑部件。

    Integrated circuit with pressure sensor and manufacturing method
    9.
    发明公开
    Integrated circuit with pressure sensor and manufacturing method 有权
    Integrierte Schaltung mit Drucksensor und Herstellungsverfahren

    公开(公告)号：EP2674392A1

    公开(公告)日：2013-12-18

    申请号：EP12171649.2

    申请日：2012-06-12

    申请人： NXP B.V.

    发明人： Nackaerts, Axel ,  Besling, Willem ,  Reimann, Klaus

    IPC分类号： B81C1/00 ,  G01L9/00

    CPC分类号： G01L9/0073 ,  B81B7/008 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01L9/0042 ,  H01L21/28 ,  H01L29/84

    摘要： Disclosed is an integrated circuit (100), comprising a semiconductor substrate (110) carrying a plurality of circuit elements; and a pressure sensor including a cavity (140) on said semiconductor substrate, said cavity comprising a pair of electrodes (120, 122) laterally separated from each other; and a flexible membrane (130) over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture (132). A method of manufacturing such an IC is also disclosed.

    摘要翻译： 公开了一种集成电路（100），包括承载多个电路元件的半导体衬底（110）; 以及包括在所述半导体衬底上的空腔（140）的压力传感器，所述空腔包括彼此横向分离的一对电极（120,122）; 和柔性膜（130），其与所述电极在空间上分离，使得所述膜干扰所述电极之间的边缘场，所述膜包括至少一个孔（132）。 还公开了制造这种IC的方法。