公开(公告)号：EP3095757B1

公开(公告)日：2018-12-05

申请号：EP16169401.3

申请日：2016-05-12

Applicant: ams International AG

Inventor： Daamen, Roel ,  Bouman, Hendrik ,  Vijayakumar, Kailash

IPC: B81C1/00 ,  H01L23/64

CPC classification number: B81C1/00825 ,  B81B7/0016 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/015 ,  B81B2207/03 ,  B81C2201/0104 ,  B81C2201/0146 ,  B81C2203/0735 ,  H01L23/642

Abstract: One example discloses a chip, comprising: a substrate (102, 202, 302, 602, 802); a first side of a passivation layer (206, 604, 804) coupled to the substrate (102, 202, 302, 602, 802); a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer (206, 604, 804) which is opposite to the first side of the passivation layer (206, 604, 804); and a set of structures (108, 110, 214, 306, 410, 502, 504, 612, 614, 702, 812) coupled to the second side of the passivation layer (206, 604, 804) and configured to have a structure height greater than or equal to the device height.

公开(公告)号：EP3353112A1

公开(公告)日：2018-08-01

申请号：EP16775514.9

申请日：2016-09-19

Applicant: AT & S Austria Technologie & Systemtechnik Aktiengesellschaft

Inventor： KASPER, Alexander ,  GRABMAIER, Sandra ,  LEITGEB, Markus

IPC: B81C1/00 ,  H05K3/00 ,  B81B7/00

CPC classification number: H05K1/185 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/053 ,  B81B2207/07 ,  B81C1/00142 ,  G01L1/12 ,  G01L1/148 ,  G01L1/16 ,  G01L1/2262 ,  G01L1/2293 ,  G01P1/023 ,  G01P15/00 ,  H01L41/053 ,  H01L41/1132 ,  H05K1/162 ,  H05K2201/10083 ,  H05K2201/10151

Abstract: In a connection panel for electronic components (1) comprising a plurality of insulating layers (8, 9, 2, 11, 12) and conductive layers (13, 14, 15) and further comprising an electronic sensor (4), the sensor (4) is comprised of at least one flexure member (4') formed by a flexure layer (2), the flexure member (4') protruding from the flexure layer (2) and into a clearance (3) within the flexure layer (2) and carrying at least a part of a flexure sensing device (6).

公开(公告)号：EP3342749A2

公开(公告)日：2018-07-04

申请号：EP17210331.9

申请日：2017-12-22

Applicant: Sonion Nederland B.V.

Inventor： Mögelin, Raymond ,  de Roo, Dion Ivo ,  Blom, Frederik Cornelis ,  Fransen, Alwin ,  Mulyar, Pavlo ,  Post, Peter Christiaan

IPC: B81B3/00

CPC classification number: B81B3/007 ,  B81B3/0045 ,  B81B2201/0257 ,  B81B2201/0264 ,  H04R19/005 ,  H04R19/01 ,  H04R19/04 ,  H04R2201/003

Abstract: The present invention relates to a micro-electromechanical transducer comprising one or more moveable members, and a viscoelastic substance having a predetermined viscoelasticity, the viscoelastic substance being adapted to influence the response of the transducer in a predetermined manner. The micro-electromechanical transducer of the present invention may include a MEMS transducer, such as a MEMS microphone, a MEMS vibration sensor, a MEMS acceleration sensor, a MEMS receiver.

公开(公告)号：EP3321655A1

公开(公告)日：2018-05-16

申请号：EP17201370.8

申请日：2017-11-13

Applicant: Rosemount Aerospace Inc.

Inventor： POTASEK, David P. ,  HOULIHAN, Sean

IPC: G01L9/00

CPC classification number: B81B3/0086 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2201/014 ,  G01L9/0047 ,  G01L9/0073

Abstract: A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.

Abstract translation: 用于电容式压力传感器的配置使用绝缘体上硅晶片来跨压力感测晶片的间隙形成电隔离感测节点。 整个电容式压力传感器的电气隔离，间隙的小面积和硅材料允许最小的寄生电容并避免与热失配相关的问题。

公开(公告)号：EP3281911A1

公开(公告)日：2018-02-14

申请号：EP17162605.4

申请日：2017-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： TOCCHIO, Alessandro ,  CORSO, Lorenzo

IPC: B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/092 ,  B81B2207/096 ,  B81C1/00246 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: A process for manufacturing an integrated semiconductor device (55), envisages: forming a MEMS structure (26); forming an ASIC electronic circuit (36); and electrically coupling the MEMS structure to the ASIC electronic circuit (36). The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate (20) including semiconductor material; wherein the MEMS structure (26) is formed at a first surface (20a) of the substrate, and the ASIC electronic circuit is formed at a second surface (20b') of the substrate (20), vertically opposite to the first surface (20a) in a direction transverse to a horizontal plane of extension of the first surface (20a) and of the second surface (20b').

Abstract translation: 用于制造集成半导体器件（55）的工艺设想：形成MEMS结构（26）; 形成ASIC电子电路（36）; 以及将MEMS结构电耦合到ASIC电子电路（36）。 MEMS结构和ASIC电子电路从包括半导体材料的相同衬底（20）开始集成; 其中所述MEMS结构（26）形成在所述衬底的第一表面（20a）处，并且所述ASIC电子电路形成在所述衬底（20）的第二表面（20b'）处，与所述第一表面（20a） ）在横向于第一表面（20a）和第二表面（20b'）的延伸的水平面的方向上延伸。

公开(公告)号：EP3276324A1

公开(公告)日：2018-01-31

申请号：EP17183219.9

申请日：2017-07-26

Applicant: DunAn Sensing, LLC

Inventor： DO, Danny (Duy) ,  NGUYEN, Tom ,  NGUYEN, Kevin Cuong ,  MARTINEZ, Claudio

IPC: G01L19/00 ,  G01L19/14 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0264 ,  B81C1/0023 ,  B81C1/00301 ,  G01L19/0076 ,  G01L19/148

Abstract: Sensor packages and methods of assembling a sensor in a sensor package are provided. A preferred embodiment comprises: a base including a sensor coupled to the base wherein the base has at least one electrical connection location and a first mechanical mating interface in the shape of an arc; an electronics package with at least one electrical connection location; and a ring coupled between the base and the electronics package wherein the ring electrically connects the at least one electrical connection location on the base and the at least one electrical connection location on the electronics package and wherein the base has a second mechanical mating interface in the shape of an arc that is reciprocal to the first mating interface.

Abstract translation: 提供了传感器封装和在传感器封装中组装传感器的方法。 优选实施例包括：基座，其包括耦合到基座的传感器，其中基座具有至少一个电连接位置和呈弧形的第一机械配合接口; 具有至少一个电连接位置的电子组件; 以及联接在所述基座和所述电子组件之间的环，其中所述环电连接所述基座上的所述至少一个电连接位置和所述电子组件上的所述至少一个电连接位置，并且其中所述基座具有第二机械配合接口， 与第一配合接口相互作用的弧的形状。

公开(公告)号：EP3253708A1

公开(公告)日：2017-12-13

申请号：EP16746948.5

申请日：2016-01-15

Applicant: MKS Instruments, Inc.

Inventor： GU, Lei ,  BART, Stephen F.

IPC: B81B7/02 ,  B81B7/04 ,  B81C1/00 ,  B81C3/00 ,  G01L19/00 ,  G01K13/00 ,  G01P15/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

公开(公告)号：EP2943434B1

公开(公告)日：2017-11-29

申请号：EP13815302.8

申请日：2013-12-10

Applicant: Robert Bosch GmbH

Inventor： GRAHAM, Andrew ,  FEYH, Ando ,  O'BRIEN, Gary

IPC: B81B7/00 ,  G01K7/22

CPC classification number: G01K7/226 ,  B81B7/008 ,  B81B7/0087 ,  B81B2201/0264 ,  B81B2207/03 ,  Y10T29/49085

公开(公告)号：EP3216753A1

公开(公告)日：2017-09-13

申请号：EP17159400.5

申请日：2017-03-06

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： GHIS, Anne ,  DELAUNAY, Marc

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0089 ,  B81B3/0075 ,  B81B2201/02 ,  B81B2201/0264 ,  B81B2201/03 ,  B81B2201/06 ,  B81B2203/0127 ,  B81B2207/115 ,  B81C1/00158

Abstract: L'invention concerne une membrane en carbone amorphe pour un microsystème électromécanique, la membrane en carbone amorphe présentant une épaisseur comprise enre 1 nm et 50 nm, et de préférence comprise entre 3 nm et 20 nm, dans laquelle la membrane en carbone amorphe présente un taux d'hybridation de type sp 3 compris entre 20% et 40%.

Abstract translation: 本发明涉及用于机电微系统的无定形碳膜，所述无定形碳膜具有1nm至50nm，并且优选3nm至20nm的厚度，其中所述无定形碳膜具有 sp3杂交率在20％至40％之间。

公开(公告)号：EP3038974A4

公开(公告)日：2017-07-26

申请号：EP14839979

申请日：2014-08-26

Applicant: SILEX MICROSYSTEMS AB

Inventor： KÄLVESTEN EDVARD ,  EBEFORS THORBJÖRN ,  SVEDIN NIKLAS

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/00 ,  H01L23/08 ,  H01L23/48

CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235