Abstract:
A first look-up table (10) outputs a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A second look-up table (12) outputs a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. A third look-up table (14) outputs a residue as a result of dividing a horizontal component of a pixel address in the block by number of pixels in a horizontal component of the cell. A fourth look-up table (16) outputs a residue as a result of dividing a vertical component of a pixel address in the block by number of pixels in a vertical component of the cell. The output values of the first and second look-up tables (10, 12) are addresses of the cell for burst access to the memory. The output values of the third and fourth look-up tables (14, 16) are used as pixel addresses in the cell.
Abstract:
This invention provides an APD which can reduce a dark current derived from a mesa surface. An APD 301 is provided with the semi-insulating substrate 1, a first mesa 101 having a first laminate constitution in which a p-type electrode layer 2, a p-type light absorbing layer 3A, a light absorbing layer 3B with a low impurity concentration, a band gap inclined layer 4, a p-type electric field control layer 5, an avalanche multiplier layer 6, an n-type electric field control layer 7A, and an electron transit layer 7B with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate 1, a second mesa 102 having an outer circumference provided inside an outer circumference of the first mesa 101 as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer 8A and an n-type electrode layer 8B are stacked in this order on a surface on the electron transit layer 7B side, and a depletion control region 11 that is provided in layers on the second mesa 102 side relative to the p-type electric field control layer 5, formed in an encircling portion 14 provided inside an outer circumference of the first mesa 101 and encircling an outer circumference of the second mesa 102, and prevents the encircling portion of the p-type electric field control layer 5 from being depleted when bias is applied.
Abstract:
This invention provides a semiconductor device which can reduce a device size, reduce a series resistance, and suppress a leakage current. In this invention, a layer in which the potential level difference normally unrequired for device operation is generated is positively inserted in a device structure. The potential level difference has such a function that even if a semiconductor having a small bandgap is exposed on a mesa side surface, a potential drop amount of the portion is suppressed, and a leakage current inconvenient for device operation can be reduced. This effect can be commonly obtained for a heterostructure bipolar transistor, a photodiode, an electroabsorption modulator, and so on. In the photodiode, since the leakage current is alleviated, the device size can be reduced, so that in addition to improvement of operating speed with a reduction in series resistance, it is advantageous that the device can be densely disposed in an array.
Abstract:
Photodiode is suggested that can provide a THz operation with a stable output. A photodiode having a pin-type semiconductor structure, comprising: a semiconductor layer structure obtained by sequentially layering an n-type contact layer, a low concentration layer, and a p-type contact layer; and an n electrode and a p electrode connected to the n-type contact layer and the p-type contact layer, respectively and, during the operation, the low concentration layer is depleted, wherein: the low concentration layer is obtained by layering an electron drift layer, a light absorption layer, and a hole drift layer while being abutted to the n-type contact layer. Preferably, the electron drift layer and the hole drift layer do not function as a light absorption layer and, the thickness of the electron drift layer and the thickness of the hole drift layer are changed to thereby adjust required light and response characteristic. The light absorption layer has a field strength set to be relatively higher than the field strength of at least one of the electron drift layer and the hole drift layer. The electron drift layer is subjected to n-type doping and the hole drift layer is subjected to p-type doping.
Abstract:
Provided is a lens holder, a lens optical component, or a package equipped with the lens optical component, in which poor welding between a lens housing and the lens holder may not occur. A lens holder includes a pair of leg members inclined and extending to a lens housing from a support member that supports the lens holder at a predetermined position. A distance between pair of leg members is set such that the distance between lower end portions is equal to or larger than a width of the lens housing to be supported, and the distance between upper end portions is equal to or smaller than the width of the lens housing to be supported, and that the distance becomes gradually smaller from the lower end portions to the upper end portions of the legs. A lens optical component includes a lens housing holding a lens, and the lens holder. The pair of leg members at the upper end portions are in contact with the lens housing, and welded at portions in contact with the lens housing. A package is equipped with the lens optical component and two or more optical components. The lens optical component is inserted in an optical path of the two or more optical components, and the height of the lens holder is set to be equal to a height of the input-output portion of an optical device.