公开(公告)号：EP1348228A4

公开(公告)日：2010-08-04

申请号：EP01998988

申请日：2001-11-29

申请人： SAINTECH PTY LTD

发明人： SAINTY WAYNE G

IPC分类号： H05H1/24 ,  C23C14/22 ,  C23C14/32 ,  C23C14/54 ,  H01J27/08 ,  H01J37/04 ,  H01J37/08 ,  H01J37/317 ,  H01J27/02

CPC分类号： H01J27/02 ,  C23C14/221 ,  C23C14/54 ,  H01J27/146 ,  H01J37/08

公开(公告)号：EP1099235A4

公开(公告)日：2006-05-10

申请号：EP99932551

申请日：1999-07-21

申请人： SAINTECH PTY LTD

发明人： SAINTY WAYNE G

IPC分类号： H01J27/02 ,  H01J27/14

CPC分类号： H01J27/146 ,  H01J27/022

摘要： An ion source (10) for producing a beam of ions from a plasma is disclosed. A plasma is created at the centre of an annular anode (12) by collisions between energetic electrons and molecules of an ionisable gas. The electrons are sourced from a cathode filament (11) and are accelerated to the anode (12) by an applied electric potential. A magnetic field having an axis aligned with the axis of the anode acts to concentrate the flow of electrons to the centre of the anode (12). The ionisable gas is introduced into the ion source (10) at the point of concentrated electron flow. Ions created in the resultant plasma are expelled from the ion source as an ion beam centred on the axis of the magnetic field. The surfaces of the anode are coated with an electrically conductive non-oxidising layer of Titanium Nitride to prevent a build up of an insulating layer on the anode.

公开(公告)号：EP1348228A1

公开(公告)日：2003-10-01

申请号：EP01998988.8

申请日：2001-11-29

申请人： Saintech Pty. Ltd

发明人： SAINTY, Wayne, G.

IPC分类号： H01J37/317 ,  H01J37/08 ,  H01J27/02 ,  C23C14/54

CPC分类号： H01J27/02 ,  C23C14/221 ,  C23C14/54 ,  H01J27/146 ,  H01J37/08

摘要： An ion source (10) for use in ion assisted deposition of films, has an ionisation region (13), a gas supply (22), supplying ionisable gas to the ionisation region, a gas excitation system (11, 12) causing ionisation of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the current.