DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELECTRICS

    公开(公告)号:EP4131339A2

    公开(公告)日:2023-02-08

    申请号:EP22197006.4

    申请日:2017-04-28

    IPC分类号: H01L21/20 H01L21/02

    摘要: A multilayer structure comprising:
    a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer;
    a layer comprising silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer;
    a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride, the layer comprising hexagonal boron nitride being attached to the layer comprising silicon nitride by surface adsorption at active sites of the layer comprising silicon nitride; and
    a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene and the layer comprising hexagonal boron nitride forming a van der Waals bound heterostructure.