公开(公告)号：EP0864175B1

公开(公告)日：2001-11-21

申请号：EP96932256.9

申请日：1996-09-18

申请人： ADVANCED MICRO DEVICES INC.

发明人： CHEUNG, Robin, W. ,  CHAN, Simon, S. ,  GUPTA, Subhash

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76886 ,  H01L23/5283 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Each metal interconnect structure (14) includes an aluminum interconnect (16) sandwiched between two refractory metal layers (18, 20). The method of the present invention involves forming a layer of aluminum intermetallic alloy (24) on the sidewalls (22) of the aluminum interconnnects (16). The layer of aluminum intermetallic alloy (24) comprises aluminum-refractory metal alloy. The aluminum-refractory metal alloy is formed by reacting the exposed aluminum on the sidewalls (22) with refractory metal-containing precursor material.

摘要翻译： 提供一种用于形成金属互连结构的方法，其抵抗由电迁移引起的堆积的形成。 每个金属互连结构包括夹在两个难熔金属层之间的铝互连。 本发明的方法包括在铝互连件的侧壁上形成铝金属间合金层。 铝金属间合金层为侧壁提供加固。 铝金属间合金层包括铝 - 难熔金属合金。 铝 - 难熔金属合金通过将侧壁上暴露的铝与含难熔金属的前体材料反应而形成。 在形成铝金属间合金层之后，铝互连的侧壁，堆积的形成将被抑制。 因此，铝互连的寿命延长。 因此，本发明的方法提高了使用铝互连的集成电路的可靠性和耐磨性。

公开(公告)号：EP0864175A1

公开(公告)日：1998-09-16

申请号：EP96932256.0

申请日：1996-09-18

申请人： ADVANCED MICRO DEVICES INC.

发明人： CHEUNG, Robin, W. ,  CHAN, Simon, S. ,  GUPTA, Subhash

IPC分类号： H01L23 ,  H01L21

CPC分类号： H01L21/76886 ,  H01L23/5283 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Each metal interconnect structure (14) includes an aluminum interconnect (16) sandwiched between two refractory metal layers (18, 20). The method of the present invention involves forming a layer of aluminum intermetallic alloy (24) on the sidewalls (22) of the aluminum interconnnects (16). The layer of aluminum intermetallic alloy (24) comprises aluminum-refractory metal alloy. The aluminum-refractory metal alloy is formed by reacting the exposed aluminum on the sidewalls (22) with refractory metal-containing precursor material.

公开(公告)号：EP1034564B1

公开(公告)日：2006-01-18

申请号：EP98943453.5

申请日：1998-08-28

申请人： ADVANCED MICRO DEVICES, INC.

发明人： WANG, Fei ,  FOOTE, David, K. ,  CAGAN, Myron, R. ,  GUPTA, Subhash

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/768

CPC分类号： H01L21/0214 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3121 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.

公开(公告)号：EP1034564A1

公开(公告)日：2000-09-13

申请号：EP98943453.5

申请日：1998-08-28

申请人： ADVANCED MICRO DEVICES INC.

发明人： WANG, Fei ,  FOOTE, David, K. ,  CAGAN, Myron, R. ,  GUPTA, Subhash

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/768

CPC分类号： H01L21/0214 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3121 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.