-
1.发明授权PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING ANTIREFLECTIVE ETCH STOP LAYER 有权用于生产半导体的配置有防REFLEKTIERENDEEN法刻蚀阻挡层
公开(公告)号：EP1034564B1
公开(公告)日：2006-01-18
申请号：EP98943453.5
申请日：1998-08-28
发明人： WANG, Fei , FOOTE, David, K. , CAGAN, Myron, R. , GUPTA, Subhash
IPC分类号： H01L21/314 , H01L21/318 , H01L21/768
CPC分类号： H01L21/0214 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3121 , H01L21/3144 , H01L21/3145 , H01L21/76802 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
-
2.发明公开PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE INCLUDING ANTIREFLECTIVE ETCH STOP LAYER 有权用于生产半导体的配置有防REFLEKTIERENDEEN法刻蚀阻挡层
公开(公告)号：EP1034564A1
公开(公告)日：2000-09-13
申请号：EP98943453.5
申请日：1998-08-28
发明人： WANG, Fei , FOOTE, David, K. , CAGAN, Myron, R. , GUPTA, Subhash
IPC分类号： H01L21/314 , H01L21/318 , H01L21/768
CPC分类号： H01L21/0214 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3121 , H01L21/3144 , H01L21/3145 , H01L21/76802 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
-
搜索结果
2 条记录 (耗时 0.008 秒)
