公开(公告)号：EP1307921A2

公开(公告)日：2003-05-07

申请号：EP01931006.9

申请日：2001-05-01

申请人： ADVANCED MICRO DEVICES INC.

发明人： KRISHNAN, Srinath

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L21/84 ,  H01L27/0705 ,  H01L27/1203 ,  H01L29/1041 ,  H01L29/7831 ,  H01L29/7841 ,  H01L29/78612 ,  H01L29/78621 ,  H01L29/78645

摘要： A MOSFET multiple device structure (50) is provided. The structure (50) comprises a plurality of MOSFET devices (52, 54, 56) sharing at least one heavily doped region (110) extending underneath a gate region (90, 156) of at least two of the plurality of MOSFET devices (52, 54, 56). The shared heavily doped region (110) provides a capacitive coupling forming a capacitive voltage divider with the junction capacitance of the MOSFET devices (52, 54, 56) between a body region (120, 158) and the gate region (90, 156).

公开(公告)号：EP1307922A2

公开(公告)日：2003-05-07

申请号：EP01931008.5

申请日：2001-05-01

申请人： ADVANCED MICRO DEVICES INC.

发明人： KRISHNAN, Srinath ,  HOLST, John, C. ,  YU, Bin

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/78621 ,  H01L29/7841 ,  H01L29/78612

摘要： A transistor structure (50) is provided comprising a source region (82, 86) having a N+ drain region (80) and a N' lightly doped drain region (80) and a N' lightly doped drain region (84). AP++ heavily doped (110) is provided. The P++ region (110) resides alongside at least a portion of at least one of the N- lightly doped source region (86) and N- lightly doped drain region (84). AP+ body region (120, 158) resides below a gate (90, 156) of the device (50) and between the source (82, 86) and drain (80, 84) regions. The P++ heavily doped region (110) provides a capacitive coupling between a body region (120, 158) and the gate (90, 156) of the device (50) and form a capacitive voltage divider with the junction capacitance of the device (50).