摘要:
A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber (10) on a susceptor (20) which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrator mechanism (36) which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.
摘要:
A rotatable substrate supporting mechanism (20) for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor (30) forsupporting a single substrate (32), or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system (130) for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system (176, 111 ,178) is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor (194) under control of a circuit (212) which stops and starts the rotation at controlled speeds and stops the rotation at a homeposition for enhancing the handling of the wafers.