HEATING SYSTEM FOR REACTION CHAMBER OF CHEMICAL VAPOR DEPOSITION EQUIPMENT
    1.
    发明授权
    HEATING SYSTEM FOR REACTION CHAMBER OF CHEMICAL VAPOR DEPOSITION EQUIPMENT 失效
    加热SYSTEM FOR反应室化学气相降装置。

    公开(公告)号:EP0363437B1

    公开(公告)日:1994-12-28

    申请号:EP88906646.0

    申请日:1988-06-17

    IPC分类号: C23C16/46 C23C16/48 C23C16/00

    CPC分类号: C23C16/481

    摘要: A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber (10) on a susceptor (20) which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly (32), a lower heating element assembly (34) and a heat concentrator mechanism (36) which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processing cycle.