摘要:
Spectrometer objective for a particle beam measuring system with an objective lens and a retarding field spectrometer which form a particle beam optical unit for focussing a primary particle beam, wherein the retarding field spectrometer comprises an extraction electrode arrangement for extracting secondary particles from a specimen, an acceleration electrode arrangement for accelerating the secondary particles in the direction of the objective lens, a retarding field electrode arrangement for establishing a potential barrier which retards the secondary particles and means for charging the first electrode arrangement with at least two different voltages for adjustment of the extraction field strength. Furthermore, there are means for charging the acceleration electrode arrangement dependent on the voltage of the extraction electrode arrangement to form a secondary particle bundle being adapted for passing the retarding field electrode arrangement.
摘要:
To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section (20, 30, 40, 50) that generates a plurality of the charged particle beams at different irradiation positions in a width direction (Y) of the line pattern; a scanning control section (190) that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction (X) of the line pattern; a selecting section (160) that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section (170) that controls the at least one selected charged particle beam to irradiate the sample.
摘要:
To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section (20, 30, 40, 50) that generates a plurality of the charged particle beams at different irradiation positions in a width direction (Y) of the line pattern; a scanning control section (190) that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction (X) of the line pattern; a selecting section (160) that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section (170) that controls the at least one selected charged particle beam to irradiate the sample.
摘要:
Provided is an exposure apparatus that exposes a pattern on a sample, the exposure apparatus including a plurality of blanking electrodes that are provided corresponding to a plurality of charged particle beams and each switch whether the corresponding particle beam irradiates the sample according to an input voltage; an irradiation control section that outputs switching signals for switching blanking voltages supplied respectively to the blanking electrodes; and a measuring section that, for each blanking electrode, measures a delay amount that is from when the switching signal changes to when the blanking voltage changes.