公开(公告)号：EP1420080A2

公开(公告)日：2004-05-19

申请号：EP03257169.7

申请日：2003-11-13

申请人： Applied Materials, Inc.

发明人： Chen, Ling ,  Ku, Vincent ,  Chang, Mei ,  Wu, Dien-Yeh ,  Chung, Hua

IPC分类号： C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

摘要： A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body (102) and a gas distribution assembly (130) disposed on the chamber body. The method comprises positioning a substrate surface (110) to be processed within the chamber body, delivering two or more compounds into the chamber body utilizing the gas distribution assembly on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing the gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. The gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves (140A, 140B) in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.

摘要翻译： 提供了一种用于执行多个沉积工艺的方法和装置。 在一个实施例中，该装置包括设置在室主体上的室主体（102）和气体分配组件（130）。 该方法包括将待处理的衬底表面（110）定位在室主体内，使用室主体上的气体分配组件将两个或更多个化合物输送到室主体中，以沉积包含第一材料的膜，然后输送两个或更多个化合物 使用设置在室主体上的气体分配组件将更多的化合物引入室主体中以沉积包含第二材料的膜。 气体分配组件包括与腔室主体流体连通的气体导管，两个或多个隔离的气体入口配备有与气体导管流体连通的一个或多个高速致动阀（140A，140B）和流体中的混合通道 与气体管道通讯。 这些阀适合于将一种或多种化合物交替地脉冲输送到气体导管中，并且混合通道适于将一种或多种化合物的连续流输送到气体导管中。

公开(公告)号：EP1420080A3

公开(公告)日：2005-11-09

申请号：EP03257169.7

申请日：2003-11-13

申请人： APPLIED MATERIALS, INC.

发明人： Chen, Ling ,  Ku, Vincent ,  Chang, Mei ,  Wu, Dien-Yeh ,  Chung, Hua

IPC分类号： C23C16/455 ,  C23C16/30 ,  C23C16/54

CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

摘要： A method and apparatus for performing multiple deposition processes is provided. In one embodiment, the apparatus includes a chamber body (102) and a gas distribution assembly (130) disposed on the chamber body. The method comprises positioning a substrate surface (110) to be processed within the chamber body, delivering two or more compounds into the chamber body utilizing the gas distribution assembly on the chamber body to deposit a film comprising a first material, and then delivering two or more compounds into the chamber body utilizing the gas distribution assembly disposed on the chamber body to deposit a film comprising a second material. The gas distribution assembly includes a gas conduit in fluid communication with the chamber body, two or more isolated gas inlets equipped with one or more high speed actuating valves (140A, 140B) in fluid communication with the gas conduit, and a mixing channel in fluid communication with the gas conduit. The valves are adapted to alternately pulse one or more compounds into the gas conduit, and the mixing channel is adapted to deliver a continuous flow of one or more compounds into the gas conduit.

公开(公告)号：EP1167567A1

公开(公告)日：2002-01-02

申请号：EP01304779.0

申请日：2001-05-31

申请人： Applied Materials, Inc.

发明人： Xi, Ming ,  Sinha, Ashok ,  Kori, Moris ,  Mak, Alfred W. ,  Byun, Jeong Soo ,  Chung-Lai Lei, Lawrence ,  Chung, Hua ,  Lu, Xinliang ,  Lai, Ken Kaung ,  Littau, Karl A.

IPC分类号： C23C16/02

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

摘要： A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases. The process may be carried-out where all process steps occur in a common chamber or may occur in different chambers. For example, nucleation may be carried-out in a processing chamber that is different from the processing chamber in which the bulk deposition occurs. Also disclosed is a technique for controlling the presence of fluorine atoms in the resulting layer as a function of the carrier gas employed during nucleation.

摘要翻译： 一种方法和系统，以在基片设有成核一个基板使用连续的沉积技术，其中，基板被串行暴露于随后形成的层，用人气相沉积的第一和第二反应性气体的难熔金属层，向受试者的成核层，以 包含在第一和第二反应性气体中的一个的化合物的块状沉积。 其中所有的工艺步骤发生在一个公共腔室或在不同的腔室可能发生过程可以进行。 例如，成核可以是在处理室中进行的那样是从处理腔室，其中该整体沉积的发生不同。 所以圆盘游离缺失是用于控制氟原子在所得层中存在成核过程中所采用的载体气体的功能的技术。