公开(公告)号：EP0757884B1

公开(公告)日：2009-08-05

申请号：EP96906308.0

申请日：1996-02-05

申请人： APPLIED MATERIALS, INC.

发明人： QIAN, Lingqian ,  SCHMIDT, Melvin C. ,  NOBINGER, Glenn L.

IPC分类号： H05H1/20 ,  H05H1/02 ,  H05H1/24 ,  C23C8/00 ,  C23C14/00 ,  B05D3/00 ,  C23C16/40 ,  H01L21/316

CPC分类号： H01L21/02131 ,  C23C8/28 ,  C23C8/36 ,  C23C16/401 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608

摘要： A method of forming a fluorinated silicon oxide dielectric layer (33) by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber (10) and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate (16) to form a fluorinated silicon oxide layer on the surface of the substrate (16). The fluorinated layer so formed has a dielectric constant which is less than that of a silicon oxide layer.